C3 / MAPLD2004Lake1 Radiation Effects on the Aeroflex RadHard Eclipse FPGA Ronald Lake Aeroflex Colorado Springs

C3 / MAPLD2004Lake2 RadHard Eclipse Radiation Effects Overview Test Techniques Single Event Effects Results –Single Event Upset –Single Event Latch-up Total Ionizing Dose –DC Characteristics –AC Characteristics TMR Effects on SEU Summary

C3 / MAPLD2004Lake3 Hardness Testing Conditions - SEE SEU - 25 o C, 2.25V core and 3.0V I/O, in accordance with EIA/JESD57 SEU - FPGA programmed (configured) with three data storage components –Dynamic Shift Registers - Two at 560 bits –Static Register File - 64 x 16 bits –Static RAM - 55,296 bits SEL o C, 2.7V core and 3.6V I/O, in accordance with EIA/JESD lead ceramic quad flat-pack (CQFP)

C3 / MAPLD2004Lake4 Hardness Testing Conditions - SEU Alternating ones and zeros data used for all three storage components of the FPGA National Instruments tester at 1MHz frequency –Write/read shift register –Read only register file and RAM –After a cell upsets, the correct data is re-written to the cell Texas A&M University Cyclotron Institute –Au, Kr, and Ar from 0 o (normal incidence) to 60 o

C3 / MAPLD2004Lake5 Heavy Ion Beam For SEU Analysis

C3 / MAPLD2004Lake6 Hardness Testing Conditions - SEL Devices statically biased during irradiation –Supply currents monitored for latch-up Lawrence Berkeley National Laboratory –Au at 41 o –Effective fluence at 1E7 ions/cm 2 –Effective LET = 120 MeV-cm 2 /mg Devices functionally re-verified after irradiation

C3 / MAPLD2004Lake7 Heavy Ion Chamber for SEL Analysis

C3 / MAPLD2004Lake8 Hardness Testing Conditions - TID Irradiated under worst case temperature (25 o C) and static bias conditions (max V DD ) per MIL-STD-883E Method 1019 FPGA programmed with 60 AC paths J.L. Shepherd model Cobalt 60 gamma cell

C3 / MAPLD2004Lake9 Cobalt 60 Total Ionizing Dose System

C3 / MAPLD2004Lake10 Single Event Upset Data Plot

C3 / MAPLD2004Lake11 Hardness Results - SEE SEU - Error-rates - GEO orbit, Adam’s 90% WC SEL - No latch-up to 120 MeV-cm 2 /mg TID rads(Si)/s FPGA meets datasheet ACs and DCs post 300 krad(Si)

C3 / MAPLD2004Lake12 Hardness Results - TID - Supply Current DCs Most Shifted DCs - Post radiation minus Pre-rad

C3 / MAPLD2004Lake13 Hardness Results krad(Si) TID - ACs 5 most shifted ACs on each of 2 devices Post 100 krad(Si) minus Pre irradiation

C3 / MAPLD2004Lake14 Hardness Results krad(Si) TID - ACs 5 most shifted ACs on 2 devices Post 300 krad(Si) minus Pre irradiation

C3 / MAPLD2004Lake15 RadHard Eclipse Single Voter TMR

C3 / MAPLD2004Lake16 RadHard Eclipse Single Voter Data * Estimate based on assumed onset LET of 100 and saturated x-section of 7E-9 Error-rates based on SpaceRadiation 4.0 Weibull analysis, Geo orbit, Adam’s 90% WC environment

C3 / MAPLD2004Lake17 RadHard Eclipse Single Voter Data 8/17/4 TMR2 Data : TAMU

C3 / MAPLD2004Lake18 Summary Completed RadHard Eclipse FPGA pre-qualification evaluation of radiation performance –Low Single Event Upset error rate (geosynchronous orbit, Adams 90% worst case environment) –Single Event Latch-up immune to > 108 MeV-cm 2 /mg –Passes datasheet parameters to > 300 krad(Si) Total Ionizing Dose –TMR design maps well to logic cell architecture Offered as a flight qualified QML Q & V RadHard Standard Microcircuit Drawing device