PMMA & HSQ trend chart December 2012 Sangeeth kallatt

PMMA sample preparation Substrate : 100 oxide & Si wafer Cleaning : O 2 plasma clean (2000W, 10 min) Spin speed : final rpm 6000 for 40 sec Pre bake: 180 degrees for 3 min Exposure parameters: EHT : 20 Kv Aperture : 10um Working distance: 5mm Development time : 30 sec in MIBK: IPA (1:3)

50nm line : standard deviation from expected

100nm line : standard deviation from expected

200nm line : standard deviation from expected

PMMA grating patterns for proximity study

PMMA circles

Contrast curve for PMMA 950 A2 D 0 = clearing dose ≈ 140 D 100 = dose with resist insoluble ≈ 95 Which gives ϒ = 6.8

HSQ sample preparation Substrate : Si wafer Cleaning : O 2 plasma clean (2000W, 10 min) Spin speed : final rpm 6000 for 40 sec Pre bake: no pre bake Exposure parameters: EHT : 20 Kv Aperture : 10um Working distance: 5mm Development time : 2 min in 2.36 % TMAH

HSQ lines

25 nm HSQ lines: variation of line width with Pitch Pattern size

50 nm HSQ lines: variation of line width with Pitch Pattern size

100 nm HSQ lines: variation of line width with Pitch Pattern size

Patterns for studying proximity effects

HSQ pillars

Contrast Curve for HSQ (XR1541-6%) D 0 = dose, negative resist removed ≈ 225 D 100 = dose for negative resist insoluble≈ 260 Which gives ϒ = 16