Research Projects Dr Martin Paul Vaughan available from available from

Slides:



Advertisements
Similar presentations
Modelling of Defects DFT and complementary methods
Advertisements

Quantum Theory of Solids
Nanostructures Research Group Center for Solid State Electronics Research Quantum corrected full-band Cellular Monte Carlo simulation of AlGaN/GaN HEMTs.
The physics of blue lasers, solar cells, and stop lights Paul Kent University of Cincinnati & ORNL.
Ch.1 Introduction Optoelectronic devices: - devices deal with interaction of electronic and optical processes Solid-state physics: - study of solids, through.
COST Action MP0805 Meeting, Istanbul, April 12-13, 2010 University of Nottingham, UK Effects of Hydrogen Irradiation on Deep Levels in MBE Grown Dilute.
1 Analysis of Strained-Si Device including Quantum Effect Fujitsu Laboratories Ltd. Ryo Tanabe Takahiro Yamasaki Yoshio Ashizawa Hideki Oka
Hot Electron Energy Relaxation In AlGaN/GaN Heterostructures 1 School Of Physics And Astronomy, University of Nottingham, University Park, Nottingham,
Electronic structure of La2-xSrxCuO4 calculated by the
Thermoelectrics: The search for better materials
Temperature Simulations of Magnetism in Iron R.E. Cohen and S. Pella Carnegie Institution of Washington Methods LAPW:  Spin polarized DFT (collinear)
Advanced Semiconductor Physics ~ Dr. Jena University of Notre Dame Department of Electrical Engineering SIZE DEPENDENT TRANSPORT IN DOPED NANOWIRES Qin.
Cyclotron Resonance and Faraday Rotation in infrared spectroscopy
PA4311 Quantum Theory of Solids Quantum Theory of Solids Mervyn Roy (S6) www2.le.ac.uk/departments/physics/people/mervynroy.
Large-Scale Density Functional Calculations James E. Raynolds, College of Nanoscale Science and Engineering Lenore R. Mullin, College of Computing and.
Jason Kaszpurenko Journal Club Feb. 3, 2011 Formation of Mn-derived impurity band in III-Mn-V alloys by valence band anticrossing Alberi, et all, Phys.
Computational Solid State Physics 計算物性学特論 第9回 9. Transport properties I: Diffusive transport.
Excitons in Single Wall Dr. Fazeli and Dr. Mozaffari
Lectures Introduction to computational modelling and statistics1 Potential models2 Density Functional.
Мэдээллийн Технологийн Сургууль Монгол Улсын Их Сургууль Some features of creating GRID structure for simulation of nanotransistors Bolormaa Dalanbayar,
Mechanisms of Droplet Formation and Bi Incorporation during Molecular Beam Epitaxy of GaAsBi Rachel S. Goldman, University of Michigan Ann Arbor, DMR
Optical Engineering of Metal Oxides
Theory of Intersubband Antipolaritons Mauro F
The Nuts and Bolts of First-Principles Simulation Durham, 6th-13th December : DFT Plane Wave Pseudopotential versus Other Approaches CASTEP Developers’
Graduate School of Engineering Science, Osaka University
Introduction and Overview What do we want to understand?
December 2, 2011Ph.D. Thesis Presentation First principles simulations of nanoelectronic devices Jesse Maassen (Supervisor : Prof. Hong Guo) Department.
Author: Egon Pavlica Nova Gorica Polytechic Comparision of Metal-Organic Semiconductor interfaces to Metal- Semiconductor interfaces May 2003.
1 Recent studies on a single-walled carbon nanotube transistor Reference : (1) Mixing at 50GHz using a single-walled carbon nanotube transistor, S.Rosenblatt,
Daresbury Laboratory Ferromagnetism of Transition Metal doped TiN S.C. Lee 1,2, K.R. Lee 1, K.H. Lee 1, Z. Szotek 2, W. Temmerman 2 1 Future Technology.
Development of an analytical mobility model for the simulation of ultra thin SOI MOSFETs. M.Alessandrini, *D.Esseni, C.Fiegna Department of Engineering.
Fundamentals of DFT R. Wentzcovitch U of Minnesota VLab Tutorial Hohemberg-Kohn and Kohn-Sham theorems Self-consistency cycle Extensions of DFT.
Density Functional Theory Richard M. Martin University of Illinois
TURBOMOLE Lee woong jae.
Density Functional Theory The Basis of Most Modern Calculations
Physics “Advanced Electronic Structure” Lecture 1. Theoretical Background Contents: 1. Historical Overview. 2. Basic Equations for Interacting Electrons.
Ferroelectricity induced by collinear magnetic order in Ising spin chain Yoshida lab Ryota Omichi.
Electric field which acts on core C due to the valence electrons and the other cores. Where is a cutoff function for the electric field inside the core.
Stefano Sanvito Physics Department, Trinity College, Dublin 2, Ireland TFDOM-3 Dublin, 11th July 2002.
Noise in Semiconductors
4.12 Modification of Bandstructure: Alloys and Heterostructures Since essentially all the electronic and optical properties of semiconductor devices are.
First Principle Design of Diluted Magnetic Semiconductor: Cu doped GaN
1 ME 381R Lecture 13: Semiconductors Dr. Li Shi Department of Mechanical Engineering The University of Texas at Austin Austin, TX
Advanced methods of molecular dynamics 1.Monte Carlo methods 2.Free energy calculations 3.Ab initio molecular dynamics 4.Quantum molecular dynamics 5.Trajectory.
J.Vaitkus, L.Makarenko et all. RD50, CERN, 2012 The free carrier transport properties in proton and neutron irradiated Si(Ge) (and comparison with Si)
Comp. Mat. Science School Electrons in Materials Density Functional Theory Richard M. Martin Electron density in La 2 CuO 4 - difference from sum.
1 4.1 Introduction to CASTEP (1)  CASTEP is a state-of-the-art quantum mechanics-based program designed specifically for solid-state materials science.
1 B3-B1 phase transition in GaAs: A Quantum Monte Carlo Study C N M Ouma 1, 2, M Z Mapelu 1, G. O. Amolo 1, N W Makau 1, and R Maezono 3, 1 Computational.
Sandipan Dutta and James Dufty Department of Physics, University of Florida Classical Representation of Quantum Systems Work supported under US DOE Grants.
Correlation in graphene and graphite: electrons and phonons C. Attaccalite, M. Lazzeri, L. Wirtz, F. Mauri, and A. Rubio.
Electron-Phonon Coupling in graphene Claudio Attaccalite Trieste 10/01/2009.
ACADEMIC AND SCIENTIFIC WORK ROBERTO PINEDA GÓMEZ
Design and Analysis of Hydrogenated Dilute Nitride Semiconductors
Isolated Si atoms.
Semiconductor Device Modeling
Modelling Dilute Nitride Semiconductors
BY SELLAVEL E (CA15M006) Guided By Prof.B.Viswanathan
Introduction to Tight-Binding
Production of an S(α,β) Covariance Matrix with a Monte Carlo-Generated
Half-Metallic Ferromagnetism in Fe-doped Zn3P2 From First-Principles Calculations G. JAI GANESH and S. MATHI JAYA Materials Science Group, Indira Gandhi.
Graphene doping with single atoms – a theoretical survey of energy surface  Elad Segev and Amir Natan* Department of Physical Electronics , Electrical.
Yongxing Shen1, Annica Heyman2, and Ningdong Huang2
The Materials Computation Center. Duane D. Johnson and Richard M
Prof. Sanjay. V. Khare Department of Physics and Astronomy,
Carbon Nanotube Diode Design
Review of semiconductor physics
Dynamical mean field theory: In practice
Metastability of the boron-vacancy complex (C center) in silicon: A hybrid functional study Cecil Ouma and Walter Meyer Department of Physics, University.
Volume 1, Issue 4, Pages (December 2017)
Ab initio calculation of magnetic exchange parameters
Presentation transcript:

Research Projects Dr Martin Paul Vaughan available from available from

Research Background Transport theory Scattering in highly mismatched alloys Density functional calculations First principles approach to alloy scattering

Proposed projects Develop DFT calculations of carbon in SiGe Investigation of structural stability of graphene- like materials Develop code / theory for true 2D transport Solution of the Boltzmann Transport Equation Development of Monte Carlo code (possible collaboration with University of Bristol)

Research Background

Transport theory Solutions of the Boltzmann Transport Equation Development of the ‘ladder’ method for polar optical phonon scattering (non-parabolic 3D & 2D) [1-4]

Transport theory High field effects Hot phonon effects in semiconductors [5] Hot electron transport [6]

Highly mismatched alloys Green’s function approach to understanding band structure and scattering in dilute nitrides Scattering [1-4] Density of states [2-4, 7-9]

Density Functional Theory (DFT) Overview: First Principles method for dealing with intractable many-body problem Observables of the lowest energy state – the ground state are obtained via functionals For example: an integral is a functional of the integrand that yields a scalar value In DFT, we deal with functionals of the ground state density.

Density Functional Theory (DFT) We use the DFT code ABINIT (others available) Examples: band structure of Si and Ge These use the local density approximation (LDA)

First Principles approach to alloy scattering n-type scattering due to C in Si [10] n-type mobility Si(1-x)C(x) [10] Currently working on p-type mobility for C in SiGe alloys.

Proposed projects

DFT calculations of C in SiGe C in Ge: possible hybridization of conduction and valence bands. Possible localised state forming in valence band.

DFT calculations of C in SiGe Is hybridisation real? Is a localised state forming? Problems with convergence for C in Ge? Investigations (beyond LDA): Relaxed ground state calculations already performed. Based on these, we can investigate Scissor operator GGA calculations GW calculations

DFT calculations of C in SiGe Student training by supervisor: General introduction to DFT Exchange-correlation functions Pseudopotentials Working in a UNIX environment Basic calculations with ABINIT (or other DFT code) Use of supercells Guidance through existing ABINIT input files / post-processing code for C in SiGe

Investigation of novel graphene-like materials graphenesilicenegermanene BNAlNGaN Calculated ground state densities

Investigation of novel graphene-like materials Investigation of structural stability Buckling of structure Formation energies Tensile properties (Young’s modulus, Poisson ratio) Chemical / molecular structures Monatomic / bi-atomic layers etc. Hydrogen on  -bonds etc. Epitaxial substrates etc.

Investigation of novel graphene-like materials Student training by supervisor: General introduction to DFT Exchange-correlation functions Pseudopotentials Background for graphene-like materials Working in a UNIX environment Basic calculations with ABINIT (or other DFT code) Use of 2D supercells Existing ABINIT input files

Transport in true 2D Pseudo-2D structures: e.g. the quantum well Quantised energy levels due to confinement Step-like density of states Often approached using Quantum Transport for low carrier densities and Semi-classical Transport for high densities.

Transport in true 2D Semi-classical model for phonon scattering developed for 2D [3-4] Still needs to be generalised for a magnetic field Quantum wells and lines etc. are pseudo-2D in that they still have thicknesses of many atomic layers Graphene-like materials may be considered as being true 2D – no quantized levels due to confinement.

Transport in true 2D Development of code for true and pseudo 2D transport Incorporation of magnetic field into semi-classical pseudo 2D model Investigation of quantum / semi-classical cross- over Consideration of methodology for semi-classical approach (heavily assisted): Direct solution of Boltzmann’s Transport Equation (BTE) Monte Carlo simulation

Transport in true 2D Student training by supervisor: General introduction to transport theory Programming in C++/Matlab Working from existing C++ code (supervisor’s) for direct solution of BTE Possible collaboration with Bristol University working on existing MatLab code for Monte Carlo simulation (may involve visit to meet author of code)

Projects Summary DFT calculations of carbon in SiGe * Investigation of graphene-like materials * True 2D transport Boltzmann Transport Equation (BTE) Monte Carlo (MC) code † * Tyndall; † Possible collaboration with Uni. Bristol;

References [1] M.P. Vaughan and B. K. Ridley, Solution of the Boltzmann equation for calculating the Hall mobility in bulk GaNxAs1-x, Phys. Rev. B 72, (2005) [2] M.P. Vaughan and B.K. Ridley, Electron-nitrogen scattering in dilute nitrides, Phys. Rev. B 75, (2007) [3] M.P. Vaughan and B. K. Ridley, The Hall Mobility in Dilute Nitrides, Dilute III-V Nitride Semiconductors and Material Systems, Physics and Technology, Ed. A. Erol, Springer Berlin Heidelberg (2008) [4] M.P Vaughan, Alloy and Phonon Scattering: Development of Theoretical Models for Dilute Nitrides, VDM Verlag Dr. Müller (2009) ISBN: [5] Y. Sun, M.P. Vaughan et al., Inhibition of negative differential resistance in modulation doped n-type Ga(x)In(1-x)N(y)As(1- y)/GaAs quantum wells, Phys Rev B 75, (2007) [6] M.P. Vaughan, Hot Electron Transport, Semiconductor Modeling Techniques, Springer Series in Materials Science 159, Springer Berlin Heidelberg (2012) [7] M.P. Vaughan and B. K. Ridley, Effect of non-parabolicity on the density of states for high-field mobility calculations in dilute nitrides, Phys. Stat. Sol. (c) 4, 686 (2007) [8] L Ivanova, H Eisele, MP Vaughan, P Ebert, A Lenz, R Timm, O Schumann, et al, Direct measurement and analysis of the conduction band density of states in diluted GaAs(1- x)N(x) alloys, Phys Rev B 82, (2010) [9] MP Vaughan, S Fahy, EP O'Reilly, L Ivanova, H Eisele and M Dähne, Modelling and direct measurement of the density of states in GaAsN, Phys. Stat. Sol. (b) 248, 1167 (2011) [10] M.P. Vaughan, F. Murphy-Armando and S. Fahy, First-principles investigation of the alloy scattering potential in dilute Si(1-x)C(x), Phys. Rev. B 85, (2012)