TCT study of silicon epitaxial and MCZ detectors V. Eremin 1, M. Boscardin 2, M. Bruzzi 3, D. Creanza 4, A. Macchiolo 5, D. Menichelli 3, C. Piemonte 2,

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TCT study of silicon epitaxial and MCZ detectors V. Eremin 1, M. Boscardin 2, M. Bruzzi 3, D. Creanza 4, A. Macchiolo 5, D. Menichelli 3, C. Piemonte 2, E. Verbitskaya 1 1. Physico Technical Institute - St.Petersburg, 2. IRST-Trento 3. Dip. Energetica- INFN Firenze 4. Dip. Interateneo Fisica – INFN Bari 5. Dip. Fisica – INFN Firenze CERN, October , 2006 V, Eremin …, PTI, RD50, Oct. 2006

Outline 1.Samples and experiment 2.Input data for TCT responce treatment 3.TCT response in bulk and epi detectors 4.Electric field reconstruction 5.E(x) in cooled detectors 6.Long term annealing effect 7.Conclusions V, Eremin …, PTI, RD50, Oct. 2006

Operation effective deep levels in irradiated detectors Mid gap levels (MGL) – Current generation, space charge introduction Conductance band Valence band Mid-gap acceptor Mid-gap donor Parameters of MGL Both are nearly neutral J gen ~ Σ ( N mgl * σ *exp(-E mgl /kT) ) ~ F 1/Tau ~ Σ N dl ~ F MGL1 : donor E t – E v = 0.48eV σ = 1* cm 2 MGL2: acceptor Et – Ev = 0.56eV σ = 1* cm 2 N eff = Σ(N DD + ) - Σ(N DA - ) V, Eremin …, PTI, RD50, Oct. 2006

Generation current in Si PIN detectors T= 290K V, Eremin …, PTI, RD50, Oct. 2006

Life time degradation in Si Trapping probability (protons) te0te0 1x10 3 ee 5.5x10 3 th0th0 1x10 3 hh 8x10 3 Parameterization for data of G. Gramburger …. V, Eremin …, PTI, RD50, Oct. 2006

Samples and technique V, Eremin …, PTI, RD50, Oct Technique: TCT setup at PTI TCT setup response 0.8 ns Temperature range 77 – 373K Laser wavelength 830um

Detector W13-SMG-15 epi, 150um Neutron irradiated: Feq = 8.5 E14 cm-2 Annealing: no Operational parameters: T = 293K Extracted values Tau tr = 3ns Vfd = 180V TCT data for silicon epi as irradiated detector V, Eremin …, PTI, RD50, Oct. 2006

Detector W13-SMG-15 epi, 150um Neutron irradiated: Feq = 8.5 E14 cm-2 Annealing: no Operational parameters: V = 186V T = 293K Extracted values Tau tr = 3ns Vfd = 180V E(x) reconstruction for silicon epi as irradiated detector V, Eremin …, PTI, RD50, Oct. 2006

TCT data for silicon epi annealed detector Detector W12-SMG-15 epi, 150um Neutron irradiated: Feq = 8.5 E14 cm-2 Annealing: Operational parameters: T = 293K Extracted values Vfd = 150V V, Eremin …, PTI, RD50, Oct. 2006

E(x) reconstruction for silicon epi annealed detector Detector W12-SMG-15 MCZ, 150um Neutron irradiated: Feq = 8.5 E14 cm-2 Annealing: Operational parameters: V = 147V T = 293K Extracted values Tau tr = 3 ns Vfd = 150V V, Eremin …, PTI, RD50, Oct. 2006

epi, 150um Neutron irradiated: Feq = 8.5 E14 cm-2 W13-SMG-15: non annealed W12-SMG-15: annealed min Operational parameters: T = 293K Extracted values Tau tr = 3 ns Annealing effect in silicon epi detectors non annealed annealed min annealed non annealed V, Eremin …, PTI, RD50, Oct. 2006

TCT data for silicon epi annealed detector Detector W12-SMG-19 epi, 150um Neutron irradiated: Feq = 1.7 E15 cm-2 Annealing: Operational parameters: T = 293K Extracted values Tau tr = 1.5 ns Vfd = 190V V, Eremin …, PTI, RD50, Oct. 2006

TCT data for silicon epi annealed and cooled detector Detector W12-SMG epi, 150um Neutron irradiated: Feq = 1.7 E15 cm-2 Annealing: Operational parameters: T = 263K Extracted values TAu tr = 1.5 ns Vfd = 198V V, Eremin …, PTI, RD50, Oct. 2006

Detector W12-SMG-19 epi, 150um Neutron irradiated: Feq = 1.7 E15 cm-2 annealed min RT; -10C Operational parameters: V = 174V Extracted values Tau tr = 1.5 ns Cooling effect in silicon irradiated epi detectors -10C RT -10C RT V, Eremin …, PTI, RD50, Oct. 2006

TCT data for proton irradiated silicon epi detector Detector W12-SMG-22 epi, 150um Proton irradiated: Feq = 7 E14 cm-2 Annealing: Operational parameters: T = 293K Extracted values Vfd = 54V V, Eremin …, PTI, RD50, Oct. 2006

TCT data for silicon epi annealed detector Detector W12-SMG epi, 150um Proton irradiated: Feq = 7 E14 cm-2 Annealing: Operational parameters: T = 263K Extracted values Vfd = 92V V, Eremin …, PTI, RD50, Oct. 2006

Detector W12-SMG-22 epi, 150um Proton irradiated: Feq = 7 E14 cm-2 annealed min RT; -10C Operational parameters: V = 92V Extracted values Tau tr = 4 ns Cooling effect in proton irradiated epi silicon detectors -10C RT -10C RT V, Eremin …, PTI, RD50, Oct. 2006

Detector W187-SMG-9 MCZ, 300um Proton irradiated: 26 MeV, Feq = 4.2 E14 cm-2 Annealing: no Operational parameters: T = 293K Extracted values Vfd = 206V TCT data for silicon MCZ as irradiated detector V, Eremin …, PTI, RD50, Oct. 2006

Detector W187-SMG-9 MCZ, 300um Proton irradiated: 26 MeV, Feq = 4.2 E14 cm-2 Annealing: no Operational parameters: V = 184 V T = 293K Extracted values Tau tr = 6 ns Vfd = 180V E(x) reconstruction for silicon MCZ as irradiated detector V, Eremin …, PTI, RD50, Oct. 2006

TCT data for silicon MCZ as irradiated cooled detector Detector W187-SMG-9 MCZ, 300um Proton irradiated: 26 MeV, Feq = 4.2 E14 cm-2 Annealing: no Operational parameters: T = 263K Extracted values Vfd = 180V V, Eremin …, PTI, RD50, Oct. 2006

Detector W187-SMG-9 MCZ, 300um Proton irradiated: 26 MeV, Feq = 4.2 E14 cm-2 Annealing: no Operational parameters: V = 184 V T = 263K Extracted values Tau tr = 6 ns Vfd = 180V E(x) reconstruction for silicon MCZ as irradiated cooled detector V, Eremin …, PTI, RD50, Oct. 2006

Detector W187-SMG-2 MCZ, 300um Proton irradiated: 26 MeV, Feq = 4.2 E14 cm-2 Annealing: 80C, 12 min Operational parameters: T = 293K Extracted values Vfd = 180V TCT data for silicon MCZ annealed detector V, Eremin …, PTI, RD50, Oct. 2006

E(x) reconstruction for silicon MCZ annealed detector Detector W187-SMG-2 MCZ, 300um Proton irradiated: 26 MeV, Feq = 4.2 E14 cm-2 Annealing: 80C, 12 min Operational parameters: V = 184V T = 293K Extracted values Tau tr = 6 ns V. Eremin, RD50, October 06

MCZ, 300um Proton irradiated: 26 MeV, 4.2 E14 cm-2 W187-SMG-9: non annealed W187-SMG-2: annealed min Operational parameters: V = 184 V T = 293K Extracted values Tau tr = 6 ns Vfd = 180V Annealing effect in silicon MCZ detectors non annealed annealed min non annealed annealed min V, Eremin …, PTI, RD50, Oct. 2006

Detector W187-SMG-9 MCZ, 300um Proton irradiated: 26 MeV, Feg = 4.2 E14 cm-2 Annealing: no Operational parameters: V = 184 V Extracted values Tau tr = 6 ns Vfd = 180V Effect of MCZ detectors cooling 263K 293K 263K293K V, Eremin …, PTI, RD50, Oct. 2006

Conclusions 1.The current response of MCZ and epi- silicon based detectors is can be explained in the frame of double peak electric field distribution model with “active” electricaly neutral bias region. 2. Epi- detectors exhibit the space charge sign inversion due to high irradiation fluence or reverse annealing with high resistivity base 3. The SCSI is observed for MCZ and epi- based detectors at Feq > 4.5e14cm-3 4. The SCSI is stimulated by the long term annealing in MCZ and epi detectors 4. In MCZ based detectors the long term annealing leads to increase of the electric field at n+ contact and reduction at p+ contact. 5. The electric field in the base region is insensitive to the annealing. 3. The detector cooling redistributes the electric field with a trend of its better uniformity: the electric field at the detector contacts reduces the field in the thickness of neutral base slightly increases V, Eremin …, PTI, RD50, Oct. 2006