Subject Code : 331101 Name Of Subject : Basic Electronics Name of Unit : OSCILLATORS & AMPLIFIERS. Topic :Hartely Oscillator & Colpitt oscillator By :Mr.

Slides:

Advertisements

Similar presentations

Rama Arora, Physics Department PGGCG-11, Chandigarh

Advertisements

EC 2208 – Electronic Circuits Lab 1

Electronic Devices Ninth Edition Floyd Chapter 11.

The Transistor as a Switch The two extreme possible operating points Q sat and Q cutoff show how the transistor can act as a switch. The operating point.

Cascode Stage. OUTLINE Review of BJT Amplifiers Cascode Stage Reading: Chapter 9.1.

Recall Lecture 13 Biasing of BJT Applications of BJT

ELE 1110D Lecture review Common-emitter amplifier Some functions of transistors  Current-source  Emitter Follower  Common-emitter amplifier.

Power Electronics Lecture-7 Unijunction Transistor &

SUB; ANALOG ELECTRONICS PREPARED BY MR.HUTESH BAVISKAR.

Electronic Components

BASIC ELECTRONICS.

1 Electronic Circuits TRANSISTOR PRINCIPLES & APPLICATIONS.

Storey: Electrical & Electronic Systems © Pearson Education Limited 2004 OHT 21.1 Bipolar Transistors  Introduction  An Overview of Bipolar Transistors.

Chapter 28 Basic Transistor Theory. 2 Transistor Construction Bipolar Junction Transistor (BJT) –3 layers of doped semiconductor –2 p-n junctions –Layers.

Module 2 Bipolar Junction Transistor. Learning Outcomes 1.The 3 terminals or regions of a BJT. 2.Construction and symbol of NPN and PNP types 3.Low power.

NAME OF FACULTY : MR. Harekrishna Avaiya DEPARTMENT: E.C. (PPI-1ST)

BEX100 – Basic Electricity Semiconductors Transistors & SCR’s.

SEMICONDUCTORS Thyristor.

BJT Transistor Modeling - I Electronic Circuits First Term Second Year (11CS Batch) 1.

Transistor Amplifiers

TRANSISTOR.  A transistor is a semiconductor device used to amplify and switch electronic signals and electrical power.  The transistor is the fundamental.

Parul Polytechnic Institute

Electronic Components. Battery A portable power source that has a positive and negative. Electronics works on Direct Current (DC) where electrons flow.

BJT, AC behavior Bollen.

Chapter 5 Transistor Bias Circuits

Electronic. Analog Vs. Digital Analog –Continuous –Can take on any values in a given range –Very susceptible to noise Digital –Discrete –Can only take.

RESISTORS CAPACITORS DIODES AND OTHER SOLID STATE COMPONENTS TRANSISTORS

Components and their operation. SMART Funded by The National Science Foundation Diode A diode is an semiconductor component that, in general, will pass.

 A transistor is the basic building block of electronic components.  The average computer may have millions of them within its circuits.  Essentially,

NAME: NIDHI PARMAR ENR.NO.: GUIDED BY: RICHA TRIPATHI.

Regions of a Transistor A Bipolar Junction Transistor is a three terminal device containing 3 regions: Emitter, Base and Collector.

Bipolar Junction Transistors Working Principle and Applications.

1 Lawndale High School AWIM Program Transistor Theory & Experiment Lecture 5.

BASICS OF ELECTRONICS.

Transistor Modelling A model is a combination of circuit elements, properly chosen, that best approximates the actual behaviour of a semiconductor device.

CHAPTER 10 AC Power Bipolar Junction Transistors: Operation, Circuit Models, and Applications.

Hartley Oscillator Circuit Theory Working and Application

TYPES OF COUPLING IN AMPLIFIER

DR. S. & S. S. GANDHY COLLEGE OF ENGINEERING AND TECHNOLOGY

Power Electronics. Power Electronics Why Germanium is not used for manufacturing Controlled Rectifiers.

Common Base and Common Collector Amplifiers

AMPLIFIERS AND OSCILLATORS

Resistance Impedance Energy Storage Resistor R Ohms Reactance Z Ohms

Difference Between NPN and PNP Transistor

Subject Name: LINEAR IC’s AND APPLICATIONS Subject Code:10EC46 Prepared By: Aparna.P Department: Electronics and Communication Date: /19/2018.

Transistor Amplifiers

Amplifier Group Members: Shrivastav Mehul S. Katara Sandeep.

SMALL SIGNAL ANALYSIS OF CB AMPLIFIER

SMALL SIGNAL ANALYSIS OF CE AMPLIFIER

Principles & Applications Small-Signal Amplifiers

SOLIDS AND SEMICONDUCTOR DEVICES - III

Chapter 5: BJT AC Analysis

Transistors and Integrated Circuits

POWER AMPLIFIERS.

Transistor Characteristics

SCR / Thyristor Circuit Symbol and Terminal Identification.

PRESENTATION OF ELECTRONICS-I

Govt. Polytechnic, Dhangar

Electronics Fundamentals

LC Oscillators Use transistors and LC tuned circuits or crystals in their feedback network. For hundreds of kHz to hundreds of MHz frequency range. Examine.

SOLIDS AND SEMICONDUCTOR DEVICES - III

Amplifiers Classes Electronics-II

Amplifiers Classes Electronics-II

ELECTRONIC SYSTEMS Note: There is no compulsory question set on Section 25 of the syllabus. Questions set on topics within Section 25 are always set as.

Electronic PRINCIPLES

BIPOLAR JUNCTION TRANSISTOR (BJT)

CHAPTER 60 SINGLE TRANSISTOR AMPLIFIERS

CHAPTER 59 TRANSISTOR EQUIVALENT CIRCUITS AND MODELS

Presentation transcript:

Subject Code : Name Of Subject : Basic Electronics Name of Unit : OSCILLATORS & AMPLIFIERS. Topic :Hartely Oscillator & Colpitt oscillator By :Mr. Harekrushna Avaiya

Circuit Explanation :-  Q is NPN transistor.  R1 and R2 are biasing resistor.  RE is the resistance connected in the emitter.  CE is the bypass capacitor.  (L1+L2)C form the tank circuit.  RFC is the radio frequency chocke which allows d.c to pass through and offers high impedance to a.c.  Oscillation energy developed across the choke is coupled to tank circuit by coupling capacitor C2. By:-Harekrushna Avaiya

Working:-  When power supply is given,collector current flows through the choke.  A.C. energy developed in the collector circuit given to tank circuit through coupling capacitor Cc2.  Voltage developed across L2 is coupled to the base through coupling capacitor Cc1..

 Q is NPN transistor.  R1 and R2 are biasing resistor.  RE is the resistance connected in the emitter.  CE is the bypass capacitor.  (C1+C2)L form the tank circuit.  RFC is the radio frequency choke which allows d.c to pass through and offers high impedance to a.c.  Oscillation energy developed across the choke is coupled to tank circuit by coupling capacitor C2.

 When power supply is given, collector current flows through the choke.  A.C. energy developed in the collector circuit given comes to tank circuit through coupling capacitor Cc2.  Voltage developed across C2 is coupled to the base through coupling capacitor Cc1..

 CONSTRUCTION:-  SCR is 4-layer,3-junction and 3-terminal PNPN semiconductor device.  Here, three terminal is given as,  -Anode,  -Cathode &  -Gate

 Working of SCR can be easily understand by two transistor analogy.  If we divide the middle two layers in two parts, then construction becomes as shown in figure.  Here, one PNP transistor & other one is NPN transistor.

 As shown in figure, collector of first transistor is connected to base of second transistor and the collector of second transistor is connected to the base of first transistor.

 When anode is connected to positive supply and cathode is connected to the negative,and gate is not connected to any supply, both the transistor are in OFF state, they offer very high resistance and whole voltage is dropped in the SCR and output is zero.  When a positive pulse is given to the gate, base current IB1 flows. So, collector current IC1 flows. But the collector current IC1 of transistor T1 is the base current IB2 of transistor T2. So, the IB2 flows and as a result, collector current IC1 flows. Now, this current IC2 flows through the base of transistor T1.So,the collector current IC1 increases. This is cumulative process. As a result a large current is conducted by the device in very short time, the resistance of the device decrease too much.  So,load can be control by very small positive pulse in SCR.