Synthesis of Silver Nanowires for Conductive Ink

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Synthesis of Silver Nanowires for Conductive Ink Ryan Huard, Derek Hellested Department of Chemical Engineering University of New Hampshire, Durham, NH Background Reactor Design Screen Printing Nanowire synthesis under inert atmosphere with rapid magnetic stirring Successive scale up design Challenges of scale up include good mixing and clean injection 3 times (right) and 10 times (left) than original bench scale Commercial application of conductive ink with AgNW Print test circuits using commercial ink and compare results to synthesized ink Print onto silicon ships and test resistance Conductive ink is used in various technologies, such as solar panel current collectors. The purpose is to create ink with a low resistance, allowing for the a higher collection of solar radiation to increase efficiency. Typical inks contain solvent, binder, silver powder, and rheological agents. The binder is useful in dispersing silver powder into the solution to form smooth, homogeneous ink.1 Research groups at the University of New Hampshire Chemical Engineering Department and Conductive Compounds LLC in Hudson, NH are working together on this project with support from the NSF under Grant #CMMI-1200544 Current Results Nanowire Synthesis Synthesized silver nanowires Scaled up reactor 10 times the original quantity Synthesized silver nanowires with dimensions 25nm in diameter with a 230nm length 111 orientation of nanowire determined by x-ray diffraction Particle Characterization Two stages: Nucleation and Crystal Growth Start synthesis by forming silver nuclei Reach the critical nucleus size - Particles continue to grow from the critical nuclei Growth is limited by diffusion Ethylene glycol (EG) is used as a precursor reducing agent and solvent Silver Nitrate (AgNO3) is used as the source for silver. Copper (II) Chloride (CuCl2) is added to scavenge oxygen Polyvinylpyrrolidone (PVP) adsorbs faces of silver to inhibit growth in 2 directions (perpendicular to face, 100)3, resulting in 1D growth - Smaller reactor scales have higher yield of cylindrical particles - More spherical particles present without needle injection of argon Gas atmosphere in reactor influences particle shape1 SEM Imaging of particles from various experiments Future Research Study rheological properties of conductive inks Determine if wire orientation of nanowires in ink can be controlled - Investigate production of 100 nanowire orientation - Investigate synthesis of longer nanowires 3x in Ar with Needle 10x in Ar with Needle 10x in Ar Reaction Mechanisms The reaction below shows the formation of silver nanowires Ag(aq) + R  Ag(s) + O The R represents a reduced form of EG. The O represents the oxidized EG agent. The Ag(aq) is provided by AgNO3. Cu(II), added as CuCl2 is reduced by EG to Cu(I). Cu(I) is then oxidized by oxygen back to the Cu(II) state. The reaction with oxygen removes dissolved O2 from the solution. O2 is a poison for the crystal growth. References 1) Kylee, K. E.; Skrabalak, S. E.; Xia, Younan. Rapid synthesis of silver nanowires through a CuCl- or CuCl2-mediated polyol process. Journal of Materials Chemistry. 2008, 18, 437-441. 2) Lee, J. H.; Lee, P.; Lee, D.; Lee, S. S.; Ko, Seung Hwan. Large-Scale Synthesis and Charazterization of Very Long Silver Nanowires via Successive Multistep Growth. Crystal Growth Des. 2012, 12, 5598-5605. 3) Zhu, J. J.; Kan, J. G.; Han, M.; Wang, G. H. High-Yield Synthesis of Uniform Ag Nanowires with High Aspect Ratios by Introducing the Long-Chain PVP in an Improved Polyol Process. Journal of Nanowires. 2011, 982547. 4) Neil W. Ashcroft and N. David Mermin, Solid State Physics (Harcourt: New York, 1976). Objectives Synthesis of silver nanowires (AgNW) - Reactor scale up to ten times the bench scale Collect rheological data under screen printing conditions Ink formulation to minimize electrical resistance and optimize printing performance   Acknowledgement: We would like to thank Dr. Dale Barkey and Shohreh Hemmati for supporting this project with funding provided by the NSF.