GaAs MESFET Process Flow

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Presentation transcript:

GaAs MESFET Process Flow Wafer Cleaning Device Processing

Wafer Cleaning Degreasing (grease) Boil the substrate in Trichloroethane (TCE – 80 C) for 10 minutes (hard grease) Soak in warm Acetone (50 C) for 10 minutes (light grease and polymers) Soak in IPA (2-propanol) for 10 minutes Flush with cold IPA Blow dry with N2 RCA cleaning (oxides, metal contaminants) Immerse GaAs in 1:1 solution of HCL:DI-water for 5 minutes Immerse GaAs in 1:1 solution of NH4OH:DI-water for 5 minutes Immerse GaAs in DI-water for 5 minutes

Photoresist (positive) GaAs MESFET Process Flow Start with a n-GaAs / SI-GaAs wafer Apply positive-Photoresist (S-1813) Photoresist (positive) n-GaAs SI-GaAs

Apply 1st mask to form the S/D ohmic contact pattern GaAs MESFET Process Flow Apply 1st mask to form the S/D ohmic contact pattern Apply UV-light Exposed PR will become softer Develop (MF-319 - 45 sec.) the photoresist and remove soft parts hard PR soft PR n-GaAs SI-GaAs

hard PR n-GaAs SI-GaAs AuGeNi GaAs MESFET Process Flow S/D ohmic contact deposition (AuGeNi) – deposit them first and then thermal annealing – thicknesses ??? Lift-off (with acetone and ultrosonic agitation) AuGeNi Apply PR to form the gate Apply the mask and expose the wafer to UV light hard PR n-GaAs SI-GaAs

n-GaAs SI-GaAs AuGeNi TiPtAu GaAs MESFET Process Flow Develop the photoresist Evaporate TiPtAu AuGeNi Lift off TiPtAu n-GaAs SI-GaAs

n-GaAs SI-GaAs AuGeNi TiPtAu TiAu GaAs MESFET Process Flow First metallization AuGeNi Develop the PR TiPtAu Evaporate TiAu Lift-off TiAu n-GaAs SI-GaAs

n-GaAs SI-GaAs AuGeNi TiPtAu TiAu GaAs MESFET Process Flow Silicon-Nitride for electrical isolation TiPtAu TiAu n-GaAs SI-GaAs

* Optical lithography, feat.res. ~ 0.5-1 µm Final Device AuGeNi * Optical lithography, feat.res. ~ 0.5-1 µm TiPtAu * Ti( 250 A) / Au (1500 A) TiAu Source Drain Gate 2.5µm TiAu ~ 2.5µm TiPtAu AuGeNi n-GaAs 1.5 µm SI-GaAs 1-2 µm