Budapest University of Technology and Economics Department of Electron Devices Microelectronics, BSc course Field effect transistors.

Slides:

Advertisements

Similar presentations

Lecture Metal-Oxide-Semiconductor (MOS) Field-Effect Transistors (FET) MOSFET Introduction 1.

Advertisements

MICROWAVE FET Microwave FET : operates in the microwave frequencies

ECA1212 Introduction to Electrical & Electronics Engineering Chapter 6: Field Effect Transistor by Muhazam Mustapha, October 2011.

Field Effect Transistor characteristics

Budapest University of Technology and Economics Department of Electron Devices Microelectronics, BSc course Bipolar transistors 3.

Budapest University of Technology and Economics Department of Electron Devices Microelectronics, BSc course Bipolar transistors 2.

Budapest University of Technology and Economics Department of Electron Devices Microelectronics, BSc course Bipolar transistors 1.

Budapest University of Technology and Economics Department of Electron Devices Microelectronics (VIEE306), BSc course Autumn semester.

Budapest University of Technology and Economics Department of Electron Devices Microelectronics, BSc course Basic semiconductor physics.

Budapest University of Technology and Economics Department of Electron Devices Microelectronics, BSc course Bipolar IC transistor.

Budapest University of Technology and Economics Department of Electron Devices Microelectronics, BSc course Autumn semester 2010/2011,

J-FET (Junction Field Effect Transistor) Introduction The field-effect transistor (FET) controls the current between two points but does so differently.

Transistors These are three terminal devices, where the current or voltage at one terminal, the input terminal, controls the flow of current between the.

Semiconductor basics 1. Vacuum tubes  Diode  Triode 2. Semiconductors  Diode  Transistors Bipolar Bipolar Field Effect Field Effect 3. What’s next?

NAME OF FACULTY : MR. Harekrushna Avaiya DEPARTMENT: E.C. (PPI-1ST) BASIC ELECTRONICS.

The metal-oxide field-effect transistor (MOSFET)

Week 8b OUTLINE Using pn-diodes to isolate transistors in an IC

Chap. 5 Field-effect transistors (FET) Importance for LSI/VLSI –Low fabrication cost –Small size –Low power consumption Applications –Microprocessors –Memories.

EE314 IBM/Motorola Power PC620 IBM Power PC 601 Motorola MC68020 Field Effect Transistors.

Storey: Electrical & Electronic Systems © Pearson Education Limited 2004 OHT 20.1 Field-Effect Transistors  Introduction  An Overview of Field-Effect.

FET ( Field Effect Transistor)

Budapest University of Technology and Economics Department of Electron Devices Microelectronics, BSc course Operation of PN junctions:

Metal-Oxide-Semiconductor Field Effect Transistors

Lecture 19 OUTLINE The MOSFET: Structure and operation

Microelectronics, BSc course

ECE 342 Electronic Circuits 2. MOS Transistors

Field Effect Transistors Next to the bipolar device that has been studied thus far the Field Effect Transistor is very common in electronic circuitry,

Chapter 5: Field Effect Transistor

Chapter 4 Field-Effect Transistors

1 Fundamentals of Microelectronics  CH1 Why Microelectronics?  CH2 Basic Physics of Semiconductors  CH3 Diode Circuits  CH4 Physics of Bipolar Transistors.

Electronic Devices Laboratory CE/EE 3110 Low Frequency Characteristics of Junction Field Effect Transistors Low Frequency Characteristics.

Budapest University of Technology and Economics Department of Electron Devices Microelectronics, BSc course Field effect transistors.

Field Effect Transistors

Budapest University of Technology and Economics Department of Electron Devices Microelectronics, BSc course Field effect transistors.

© 2000 Prentice Hall Inc. Figure 5.1 n-Channel enhancement MOSFET showing channel length L and channel width W.

Budapest University of Technology and Economics Department of Electron Devices Microelectronics, BSc course Operation of PN junctions:

Budapest University of Technology and Economics Department of Electron Devices Microelectronics, BSc course Bipolar IC technology:

Budapest University of Technology and Economics Department of Electron Devices Microelectronics, BSc course MOS inverters

1 Other Transistor Topologies 30 March and 1 April 2015 The two gate terminals are tied together to form single gate connection; the source terminal is.

Budapest University of Technology and Economics Department of Electron Devices Microelectronics, BSc course Bipolar IC technology:

COURSE NAME: SEMICONDUCTORS Course Code: PHYS 473 Week No. 9.

SILVER OAK COLLEGE OF ENGG. & TECHNOLOGY  SUB – Electronics devices & Circuits  Topic- JFET  Student name – Kirmani Sehrish  Enroll. No

BJT transistors FET ( Field Effect Transistor) 1. Unipolar device i. e. operation depends on only one type of charge carriers (h or e) 2. Voltage controlled.

EE314 IBM/Motorola Power PC620 IBM Power PC 601 Motorola MC68020 Field Effect Transistors.

J-FET (Junction Field Effect Transistor)

Chapter 6 The Field Effect Transistor

MAHATMA PHULE A.S.C. COLLEGE, PANVEL Field Effect Transistor

Electronics The Sixteenth and Seventh Lectures

Field Effect Transistors

Field Effect Transistors: Operation, Circuit Models, and Applications

MOS Field-Effect Transistors (MOSFETs)

Other Transistor Topologies

Recall Last Lecture Common collector Voltage gain and Current gain

Field-Effect Transistors Based on Chapter 11 of the textbook

Metal Semiconductor Field Effect Transistors

Field Effect Transistor

ELECTRONICS AND COMMUNICATION

MOSFET POWERPOINT PRESENTATION BY:- POONAM SHARMA LECTURER ELECTRICAL

Chapter 2 – Transistors – Part 2

LECTURE # 8 FIELD EFFECT TRANSISTOR (FET)

Lecture #15 OUTLINE Diode analysis and applications continued

ELECTRONICS AND SOLID STATE DEVICES-II

9 Transistor Fundamentals.

Microelectronics, BSc course

JFET Junction Field Effect Transistor.

Microelectronics, BSc course

Other Transistor Topologies

Other Transistor Topologies

Chapter 4 Field-Effect Transistors

Presentation transcript:

Budapest University of Technology and Economics Department of Electron Devices Microelectronics, BSc course Field effect transistors 1: The JFET

Budapest University of Technology and Economics Department of Electron Devices Microelectronics BSc course, The JFETs © András Poppe & Vladimír Székely, BME-EET The abstraction level of our study: SYSTEM MODULE + GATE CIRCUIT n+ SD G DEVICE V out V in

Budapest University of Technology and Economics Department of Electron Devices Microelectronics BSc course, The JFETs © András Poppe & Vladimír Székely, BME-EET The JFET ► FET = Field Effect Transistor – the flow of charge carriers is influenced by electric field transversal field is used to control Channel JUNCTION FET: depletion layers of pn- junctions close the channel ► Unipolar device: current is conducted by majority carriers ► Power needed for controlling the device  0 Most important parameter: U 0 pinch-off voltage Flow depletion layer

Budapest University of Technology and Economics Department of Electron Devices Microelectronics BSc course, The JFETs © András Poppe & Vladimír Székely, BME-EET The JFET – possible realization: The width of the closed PN junction controls the conductivity of the channel PN junction  junction FET depletion layer channel n type epi-layer

Budapest University of Technology and Economics Department of Electron Devices Microelectronics BSc course, The JFETs © András Poppe & Vladimír Székely, BME-EET The JFET – a "normally on" device ► Symbols: ► Characteristics: controlled resistor (see later the triode region of MOSFETs) pinch off voltage n channel p channel no saturation saturation

Budapest University of Technology and Economics Department of Electron Devices Microelectronics BSc course, The JFETs © András Poppe & Vladimír Székely, BME-EET Calculation of the pinch off voltage d h (x) 0 L x S width of depl. layer d geom. width of channel W U(x) Pinch off: d geom. width = 2 x width of depletion layer

Budapest University of Technology and Economics Department of Electron Devices Microelectronics BSc course, The JFETs © András Poppe & Vladimír Székely, BME-EET Problem Determine the pinch off voltage of a Si JFET, if the channel width is d = 4  m and the doping is N d = /cm 3 !

Budapest University of Technology and Economics Department of Electron Devices Microelectronics BSc course, The JFETs © András Poppe & Vladimír Székely, BME-EET The characteristic geom. width of channel width of depletion layer

Budapest University of Technology and Economics Department of Electron Devices Microelectronics BSc course, The JFETs © András Poppe & Vladimír Székely, BME-EET The characteristic geom. width of channel width of depletion layer

Budapest University of Technology and Economics Department of Electron Devices Microelectronics BSc course, The JFETs © András Poppe & Vladimír Székely, BME-EET The characteristic Channel conductivity

Budapest University of Technology and Economics Department of Electron Devices Microelectronics BSc course, The JFETs © András Poppe & Vladimír Székely, BME-EET The characteristic Current constant For the triode region!

Budapest University of Technology and Economics Department of Electron Devices Microelectronics BSc course, The JFETs © András Poppe & Vladimír Székely, BME-EET The characteristic For all regions! Only in saturation:

Budapest University of Technology and Economics Department of Electron Devices Microelectronics BSc course, The JFETs © András Poppe & Vladimír Székely, BME-EET Small signal parameters, equivalent Slope / transconductance Output conductance Voltage gain In Out