Andreas Steinbach, Stefan Wurm, Christian Koelbl Ferdinand Bell, Daniel Koehler, Dirk Knobloch Sematech AEC/APC Symposium X - 1 - Plasma etch control by.

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Presentation transcript:

Andreas Steinbach, Stefan Wurm, Christian Koelbl Ferdinand Bell, Daniel Koehler, Dirk Knobloch Sematech AEC/APC Symposium X Plasma etch control by HERCULES Plasma etch control by means of physical plasma parameter measurement with HERCULES A. SteinbachS. Wurm F. Bell Ch. Koelbl D. KnoblochD. Köhler

Andreas Steinbach, Stefan Wurm, Christian Koelbl Ferdinand Bell, Daniel Koehler, Dirk Knobloch Sematech AEC/APC Symposium X Plasma etch control by HERCULES Contents -Introduction - Motivation -Plasma monitoring tool HERCULES -Al etch on LAM TCP 9600 SE -Contact etch on Applied Materials Centura MxP+ -Summary

Andreas Steinbach, Stefan Wurm, Christian Koelbl Ferdinand Bell, Daniel Koehler, Dirk Knobloch Sematech AEC/APC Symposium X Plasma etch control by HERCULES Our way of plasma processing today – an effective way ? -Experience and statistical methods in process development -“Process Monitoring” and Tool control by test wafers Process parameters power pressure B field gas flow „Black Box“ called plasma processing Process results etch rate uniformity selectivity particles

Andreas Steinbach, Stefan Wurm, Christian Koelbl Ferdinand Bell, Daniel Koehler, Dirk Knobloch Sematech AEC/APC Symposium X Plasma etch control by HERCULES Measuring Techniques for real time Plasma Monitoring Hercules n e, e, P Bulk OES k*i( ) rf probe rf voltage rf current power Ion flux probe j + (wall) Interferometry Reflectence spectroscopy layer thickness We begin to measure ! Process Results external measured etch rate uniformity selectivity particles Species in the volume ion density ion temperature neutral densities neutral temp. excitations Wafer Surface ion energy ion current radiation neutral flows (radicals) surface temp. layer thickness Plasma excitation Power balance and potential distribution electron collision rate, electron energy distribution electron density plasma potential bulk power Chamber parameters surface temp. polymer e.g. gas ad / desorption depending on ion current Process parameter rf voltage (wafer) rf current bias voltage effective power Process parameters external power pressure B field gas flow body temp.

Andreas Steinbach, Stefan Wurm, Christian Koelbl Ferdinand Bell, Daniel Koehler, Dirk Knobloch Sematech AEC/APC Symposium X Plasma etch control by HERCULES High Frequency Electron Resonance Current Low Pressure Spectroscopy Basic HERCULES Model

Andreas Steinbach, Stefan Wurm, Christian Koelbl Ferdinand Bell, Daniel Koehler, Dirk Knobloch Sematech AEC/APC Symposium X Plasma etch control by HERCULES HERCULES - Principle of measurement -Passive electrical method, no influence on the plasma -RF current measurement on ground potential at the chamber wall -RF voltage measurement at the matchbox output -Integral measurement -Results of FFT and model: electron collision rate electron density bulk power bias voltage

Andreas Steinbach, Stefan Wurm, Christian Koelbl Ferdinand Bell, Daniel Koehler, Dirk Knobloch Sematech AEC/APC Symposium X Plasma etch control by HERCULES Principle and experimental setup -Passive electrical method, no influence on the plasma -Integral measurement Algorithm

Andreas Steinbach, Stefan Wurm, Christian Koelbl Ferdinand Bell, Daniel Koehler, Dirk Knobloch Sematech AEC/APC Symposium X Plasma etch control by HERCULES SEERS provides reciprocally averaged parameters Self Excited Electron Resonance Spectroscopy

Andreas Steinbach, Stefan Wurm, Christian Koelbl Ferdinand Bell, Daniel Koehler, Dirk Knobloch Sematech AEC/APC Symposium X Plasma etch control by HERCULES Automatic data handling

Andreas Steinbach, Stefan Wurm, Christian Koelbl Ferdinand Bell, Daniel Koehler, Dirk Knobloch Sematech AEC/APC Symposium X Plasma etch control by HERCULES TCP: Al etch - trend analysis main etch -Cl 2 - MFC failure- Cleans

Andreas Steinbach, Stefan Wurm, Christian Koelbl Ferdinand Bell, Daniel Koehler, Dirk Knobloch Sematech AEC/APC Symposium X Plasma etch control by HERCULES TCP: Al etch - trend analysis barrier etch -Cl 2 - MFC failure- Cleans

Andreas Steinbach, Stefan Wurm, Christian Koelbl Ferdinand Bell, Daniel Koehler, Dirk Knobloch Sematech AEC/APC Symposium X Plasma etch control by HERCULES TCP: Al etch in Cl 2 - first wafer effect First wafer effect in main etch

Andreas Steinbach, Stefan Wurm, Christian Koelbl Ferdinand Bell, Daniel Koehler, Dirk Knobloch Sematech AEC/APC Symposium X Plasma etch control by HERCULES TCP: Al etch - with / without barrier (TiN,Ti) Ti layer detected

Andreas Steinbach, Stefan Wurm, Christian Koelbl Ferdinand Bell, Daniel Koehler, Dirk Knobloch Sematech AEC/APC Symposium X Plasma etch control by HERCULES LAM TCP 9600SE Al etch - electron density and bulk power vs TCP power TCP power effects the density and collision rate of electrons and therefore the plasma impedance and the power dissipation of the bottom power (capacitive). Mainly dependent on collision rate, the bulk power (bottom) decreases by increasing TCP power (>250W). This is the reason for the plateau in the electron density.

Andreas Steinbach, Stefan Wurm, Christian Koelbl Ferdinand Bell, Daniel Koehler, Dirk Knobloch Sematech AEC/APC Symposium X Plasma etch control by HERCULES AMAT MxP+ chamber - Hook up problems -In the actual configuration no peak - to - peak rf voltage measurement possible  dark space thickness declared to be constant – rough approximation for varying B field  systematic failure of electron density, bulk power and bias voltage -Plasma oscillation caused the B – field circulation  measurement is triggered by B – field sensor  1 measurement every 2 s only (minimum measurement period 0,2 s)

Andreas Steinbach, Stefan Wurm, Christian Koelbl Ferdinand Bell, Daniel Koehler, Dirk Knobloch Sematech AEC/APC Symposium X Plasma etch control by HERCULES MxP+: CT etch: Plasma parameters dependíng on process parameters Change of process chemistry  strong nonlinear correlation

Andreas Steinbach, Stefan Wurm, Christian Koelbl Ferdinand Bell, Daniel Koehler, Dirk Knobloch Sematech AEC/APC Symposium X Plasma etch control by HERCULES MxP+: CT etch - Etch rate BPSG (blanket) depending on plasma parameters Obvious correlations between etch rate and electron collision rate electron density bulk power

Andreas Steinbach, Stefan Wurm, Christian Koelbl Ferdinand Bell, Daniel Koehler, Dirk Knobloch Sematech AEC/APC Symposium X Plasma etch control by HERCULES MxP+: CT etch - Contact angle depending on plasma parameters Change of process chemistry  no obvious correlation between electron density and contact angle

Andreas Steinbach, Stefan Wurm, Christian Koelbl Ferdinand Bell, Daniel Koehler, Dirk Knobloch Sematech AEC/APC Symposium X Plasma etch control by HERCULES MxP+: Chamber monitoring of contact etch processes on product wafers Process mix in Applied Materials Centura MxP+ chamber: Oxide and Nitride etch with CF 4 / CHF 3 / Ar / O 2 chemistry Process 1Process 2Process 3 Descum---N 2 / O Step 1BPSGBPSGOxide Step 2---Nitride---

Andreas Steinbach, Stefan Wurm, Christian Koelbl Ferdinand Bell, Daniel Koehler, Dirk Knobloch Sematech AEC/APC Symposium X Plasma etch control by HERCULES MxP+: CT etch - Chamber monitoring of product wafers: electron collision rate Electron collision rate -decreases with rf hours -very sensitive to etch chemistry Pr1 Pr2 ! One point - one wafer

Andreas Steinbach, Stefan Wurm, Christian Koelbl Ferdinand Bell, Daniel Koehler, Dirk Knobloch Sematech AEC/APC Symposium X Plasma etch control by HERCULES MxP+: CT etch - Chamber monitoring on product wafers: electron density Electron density -decreases with rf hours slightly -sensitive to etch chemistry One point - one wafer

Andreas Steinbach, Stefan Wurm, Christian Koelbl Ferdinand Bell, Daniel Koehler, Dirk Knobloch Sematech AEC/APC Symposium X Plasma etch control by HERCULES MxP+: CT etch - Chamber monitoring on product wafers: bulk power Bulk power -decreases with rf hours -very sensitive to power input -nearly not sensitive to etch chemistry One point - one wafer

Andreas Steinbach, Stefan Wurm, Christian Koelbl Ferdinand Bell, Daniel Koehler, Dirk Knobloch Sematech AEC/APC Symposium X Plasma etch control by HERCULES MxP+: CT etch - Chamber monitoring on blanket BPSG wafers -Electron collision rate correlates with uniformity. -Electron density and bulk power too

Andreas Steinbach, Stefan Wurm, Christian Koelbl Ferdinand Bell, Daniel Koehler, Dirk Knobloch Sematech AEC/APC Symposium X Plasma etch control by HERCULES MxP+: CT etch - Chamber monitoring on test wafers: Etch Rate and Uniformity -Electron collision rate, electron density and bulk power correlate with change of etch rate at wafer edge, caused by growing polymer at chamber wall.

Andreas Steinbach, Stefan Wurm, Christian Koelbl Ferdinand Bell, Daniel Koehler, Dirk Knobloch Sematech AEC/APC Symposium X Plasma etch control by HERCULES MxP+: CT etch - Chamber monitoring on test wafers: Particle density -Electron collision rate, electron density and bulk power correlate slightly with change of particle density, caused by growing polymer at chamber wall.

Andreas Steinbach, Stefan Wurm, Christian Koelbl Ferdinand Bell, Daniel Koehler, Dirk Knobloch Sematech AEC/APC Symposium X Plasma etch control by HERCULES MxP+: Conditioning after wet clean Wetclean Stable chamber conditions after about 10 wafers.

Andreas Steinbach, Stefan Wurm, Christian Koelbl Ferdinand Bell, Daniel Koehler, Dirk Knobloch Sematech AEC/APC Symposium X Plasma etch control by HERCULES MxP+: CT etch - short term chamber drift depending on idle time -Collision rate shows dependence on chamber idle time. -Constant chamber conditions after about 40 min. -Change in electron collision rate corresponds to change in electrical failure counts. Bad chamber Electrical failure counts at Contact etch Wafer

Andreas Steinbach, Stefan Wurm, Christian Koelbl Ferdinand Bell, Daniel Koehler, Dirk Knobloch Sematech AEC/APC Symposium X Plasma etch control by HERCULES MxP+: CT etch - short term chamber drift -One of four chambers causes high failure counts. -Electron density and failure counts increase by wafer number. Wafer Electrical failure counts at Contact etch

Andreas Steinbach, Stefan Wurm, Christian Koelbl Ferdinand Bell, Daniel Koehler, Dirk Knobloch Sematech AEC/APC Symposium X Plasma etch control by HERCULES eMxP+: Arcing detection Arcing between e - chuck and wafer

Andreas Steinbach, Stefan Wurm, Christian Koelbl Ferdinand Bell, Daniel Koehler, Dirk Knobloch Sematech AEC/APC Symposium X Plasma etch control by HERCULES MxP+: CT etch - endpoint detection -endpoint on patternd wafer -endpoint on blanket wafer -First test of endpoint detection on patterned CT test wafers showed lower sensitivity than AMAT HOT Pack.

Andreas Steinbach, Stefan Wurm, Christian Koelbl Ferdinand Bell, Daniel Koehler, Dirk Knobloch Sematech AEC/APC Symposium X Plasma etch control by HERCULES Summary -Al etch in LAM TCP 9600 SE, oxide and nitride etch in Applied Materials Centura MxP+ have been monitored with HERCULES. -The measured parameters depend significantly on chamber conditions and etch results. -The masured parameters are absolute values. -No difficult modeling by the user is necessary, results are immediate.

Andreas Steinbach, Stefan Wurm, Christian Koelbl Ferdinand Bell, Daniel Koehler, Dirk Knobloch Sematech AEC/APC Symposium X Plasma etch control by HERCULES -Development and optimizing processesyes -Long and short term tool stabilityyes -Tool matchingyes -Control of chamber cleaning yes -Control of power coupling into plasmayes -Endpoint detectionpossible -Layer resolutionpossible -Spatial resolutionno -Reduction of test- and monitor wafersyes -Detection of tool failureyes -Arcing detectionyes Applications of the tool