顏勝宏 2003/3/10 1 Vegard’s law deviation in band gap and bowing parameter of ternary Al x Ga 1-x N compound semiconductors Speaker : Sheng-Horng Yen Bo-Ting.

Slides:



Advertisements
Similar presentations
Nanostructures Research Group Center for Solid State Electronics Research Quantum corrected full-band Cellular Monte Carlo simulation of AlGaN/GaN HEMTs.
Advertisements

II. Basic Concepts of Semiconductor OE Devices
Direct conversion of graphite into diamond through electronic excited states H.Nakayama and H.Katayama-Yoshida (J.Phys : Condens. Matter 15 R1077 (2003)
1 Simulation of Micro-channel Flows by Lattice Boltzmann Method LIM Chee Yen, and C. Shu National University of Singapore.
Compact Power Supplies Based on Heterojunction Switching in Wide Band Gap Semiconductors NC STATE UNIVERSITY UCSB Measurements of the E-field Breakdown.
Atomistic Simulation Group
Finite element simulations of compositionally graded InGaN solar cells G.F. Brown a,b,*, J.W.AgerIIIb, W.Walukiewicz b, J.Wua, b,a Advisor: H.C. Kuo Reporter:
HYBRID SIMULATED ANNEALING AND DIRECT SEARCH METHOD FOR NONLINEAR UNCONSTRAINED GLOBAL OPTIMIZATION Abdel-Rahman Hedar and Masao Fukushima Speaker : UFO.
CHAPTER 3 Introduction to the Quantum Theory of Solids
P461 - Semiconductors1 Semiconductors Filled valence band but small gap (~1 eV) to an empty (at T=0) conduction band look at density of states D and distribution.
ENEE-698E 1 st presentation by: Saeed Esmaili Sardari September 11, 2007.
1 Properties of GaN Films Grown by Atomic Layer Deposition Using Low-temperature III-nitride Interlayers J. R. Gong Department of Materials Science and.
9. Semiconductors Optics Absorption and gain in semiconductors Principle of semiconductor lasers (diode lasers) Low dimensional materials: Quantum wells,
Lecture Jan 31,2011 Winter 2011 ECE 162B Fundamentals of Solid State Physics Band Theory and Semiconductor Properties Prof. Steven DenBaars ECE and Materials.
The Nuts and Bolts of First-Principles Simulation
David-Alexander Robinson Sch., Trinity College Dublin Dr. Anderson Janotti Prof. Chris Van de Walle Computational Materials Group Materials Research Laboratory,
The Ancient “Periodic Table”. A Quick Survey of the Periodic Table Consider the possible compounds formed by combining atoms from different columns of.
Simulation of InGaN violet and ultraviolet multiple-quantum-well laser diodes Sheng-Horng Yen, Bo-Jean Chen, and Yen-Kuang Kuo* *Department of Physics,
The Ancient “Periodic Table”. Survey of the Periodic Table Semiconductor Materials Formed from Atoms in Various Columns.
1. Crystal Properties and Growth of Semiconductors
Gallium Nitride
Page 1 Band Edge Electroluminescence from N + -Implanted Bulk ZnO Hung-Ta Wang 1, Fan Ren 1, Byoung S. Kang 1, Jau-Jiun Chen 1, Travis Anderson 1, Soohwan.
Computational Solid State Physics 計算物性学特論 第4回 4. Electronic structure of crystals.
APSYS 參數問題. Q: 想請問 crosslight.mac 與 more.moc 差別在哪裡 ?
Note! The following is excerpted from a lecture found on-line. The original author is Professor Peter Y. Yu Department of Physics University of California.
The crystal structure of the III-V semiconductors
English ability would save life English ability gives you opportunities e.g. Job opening in TSMC
Heterostructures & Optoelectronic Devices
Region of possible oscillations
Advisor: Prof. Yen-Kuang Kuo
Introduction to semiconductor technology. Outline –4 Excitation of semiconductors Optical absorption and excitation Luminescence Recombination Diffusion.
Indium gallium nitride By Charles Ball MEEN 3344 October 15, 2008.
藍光雷射實驗室 Blue Laser Laboratory 郭艷光 Yen-Kuang Kuo 彰化師大物理系暨光電科技研究所教授兼彰化師大理學院院長 電子郵件 : 網頁 :
FZU Mn-doped Ga(As,P) and (Al,Ga)As ferromagnetic semiconductors J.Mašek, J. Kudrnovský, F.Máca, T.Jungwirth, Jairo Sinova, A.H.MacDonald.
Northwestern University Selected ZnO Properties - Molecular mass Specific gravity at room temp g/cm3 - Point group 6mm (Wurtzite)
EE105 - Spring 2007 Microelectronic Devices and Circuits
4.12 Modification of Bandstructure: Alloys and Heterostructures Since essentially all the electronic and optical properties of semiconductor devices are.
Speaker: Sheng Horng Yen 2003/5/26
Linear hydraulic fracture with tortuosity: Conservation laws and fluid extraction M. R. R. Kgatle and D. P. Mason School of computational and applied mathematics.
CCMGCCMGCCMGCCMGCCMGCCMGCCMGCCMG Ji-Hui Yang, Shiyou Chen, Wan-Jian Yin, and X.G. Gong Department of Physics and MOE laboratory for computational physical.
A semiconductor material cannot be viewed as a collection of non interacting atoms, each with its own individual energy levels. Because of the proximity.
Energy Bands and Charge Carriers in Semiconductors
Introduction to P-N diode
Turkey’s First Chip Factory: AB MicroNano
Strain dependence of the band structure and critical points of pseudomorphic Ge1-ySny alloys on Ge Nalin Fernando,1 John Hart,2 Ryan Hickey,2 Ramsey Hazbun,2.
of Aluminumthiophosphate AlPS4
Outline – semiconductors and recombination
Semiconductor crystals
Half-Metallic Ferromagnetism in Fe-doped Zn3P2 From First-Principles Calculations G. JAI GANESH and S. MATHI JAYA Materials Science Group, Indira Gandhi.
nextnano GmbH, Garching b. München, Germany
The Ancient “Periodic Table”
Read: Chapter 2 (Section 2.3)
Effective Masses in ZnGeN2
The k∙p Method Brad Malone Group Meeting 4/24/07.
EECS143 Microfabrication Technology
Prof. Sanjay. V. Khare Department of Physics and Astronomy,
Carbon Nanotube Diode Design
BAND GAP ENGINEERING Trends in cubic UC parameters and Eg As a function of composition x for the solid solution ternary semiconductor AlxGa1-xAs.
S.Li (李晟) and Z.Q.Yang (杨中芹)
Introduction to Materials Science and Engineering
Introduction of Master's thesis of Jih-Yuan Chang and Wen-Wei Lin
Semiconductor crystals
EEEM 3RD SEMESTER ELECTRICAL
More Wave Equation Solutions Leading To Energy Bands 23 and 25 January 2017.
Nonlinear response of gated graphene in a strong radiation field
More Wave Equation Solutions Leading To Energy Bands 3 and 5 February 2014.
More Wave Equation Solutions Leading To Energy Bands 2 and 4 February 2015.
More Wave Equation Solutions Leading To Energy Bands 30 January And 1 February 2019.
In term of energy bands model, semiconductors can defined as that
First Brillouin zone of FCC lattice and the band diagram (Do you see any gaps?)
Presentation transcript:

顏勝宏 2003/3/10 1 Vegard’s law deviation in band gap and bowing parameter of ternary Al x Ga 1-x N compound semiconductors Speaker : Sheng-Horng Yen Bo-Ting Liou, and Yen-Kuang Kuo 2003/3/10

顏勝宏 2003/3/10 2 Simulation items Vegard’s law deviation of wurtzite Al x Ga 1-x N Bowing parameters of linear and nonlinear Influence of Vegard’s law or not in bowing parameter

顏勝宏 2003/3/10 3 What is Vegard’s law a(x)=3.084x (1-x) a(x)=3.084x (1-x)-δx(1-x) δis deviation of Vegard’s law

顏勝宏 2003/3/10 4 What is bowing parameter E g (x) = x · E g,AlN + (1-x) ·E g,GaN - b · x · (1-x)

顏勝宏 2003/3/10 5 Wurtzite Al x Ga 1-x N 六方晶系的 wurtzite 結構

顏勝宏 2003/3/10 6 Parameter Introduction Lattice Constance AlN:a(x) = Å c(x) = Å GaN:a(x) = Å c(x) = Å Energy Band-Gap AlN: eV GaN: eV

顏勝宏 2003/3/10 7 Numerical simulation tool CASTEP ()

顏勝宏 2003/3/10 8 Convergence test Cutoff energy ( eV ),AlN Width of top valence band at Γ point ( eV ) Cutoff energy ( eV ),GaN Width of top valence band at Γ point ( eV )

顏勝宏 2003/3/10 9 Comparison the lattice constants obtained by this work and other present (1) a (Å) c (Å) AlNThis work PWPP 16) FP- LMTO 24) MBPP 18) PWPP 20) NLCC 21) NLCC 23) EXPT. 25)

顏勝宏 2003/3/10 10 Comparison the lattice constants obtained by this work and other present (2) GaNThis work PWPP 17) MBPP 18) PWPP 19) NLCC 22) NLCC 23) EXPT. 25)

顏勝宏 2003/3/10 11 Lattice constants of Al x Ga 1-x N. Materiala (Å) c (Å) GaN Al Ga N Al 0.25 Ga 0.75 N Al 0375 Ga N Al 0.50 Ga 0.50 N Al Ga N Al 0.75 Ga 0.25 N Al Ga N AlN

顏勝宏 2003/3/10 12 Comparison Valence and Band-Gap of linear and nonlinear MaterialWidth of top valence band at Γ point ( eV ) Band-gap energy ( eV ) LinearNonlinearLinearNonlinear GaN Al Ga N Al 0.25 Ga 0.75 N Al 0375 Ga N Al 0.50 Ga 0.50 N Al Ga N Al 0.75 Ga 0.25 N Al Ga N AlN

顏勝宏 2003/3/10 13 Nonlinear lattice constance a(x)

顏勝宏 2003/3/10 14 Nonlinear lattice constance c(x)

顏勝宏 2003/3/10 15 Conclusion (1) δis ±0.007 Å for a lattice constant δ is ±0.013 Å for c lattice constant

顏勝宏 2003/3/10 16 Energy Band-Gap of linear and nonlinear

顏勝宏 2003/3/10 17 Indirect Energy Band-Gap of linear and nonlinear

顏勝宏 2003/3/10 18 Conclusion (2) linearnonlinear direct indirect

顏勝宏 2003/3/10 19