ATOMISTIC MODELS FOR LOW-TEMPERATURE EPITAXIAL GROWTH OF METAL FILMS Modeling & Simulation: Kyle Caspersen, Maozhi Li, Jim Evans STM Expt: C. Stoldt, A.

Slides:



Advertisements
Similar presentations
Speaker: Xiangshi Yin Instructor: Elbio Dagotto Time: April 15, 2010 (Solid State II project) Quantum Size Effect in the Stability and Properties of Thin.
Advertisements

motivation Dynamics of spin-triplet and spin-singlet O 2 on clean Ag(100) surfaceson clean Ag(100) surfaces M. AlducinM. Alducin H. F. BusnengoH. F. Busnengo.
Stress-Induced Wrinkling in Thin Films Rui Huang Center for Mechanics of Solids, Structures and Materials Department of Aerospace Engineering and Engineering.
International Workshop on High-Volume Experimental Data, Computational Modeling and Visualization Xiangshan, October 2011 Determining the composition.
Influence of Substrate Surface Orientation on the Structure of Ti Thin Films Grown on Al Single- Crystal Surfaces at Room Temperature Richard J. Smith.
Off-lattice KMCsimulations of hetero-epitaxial growth: the formation of nano-structured surface alloys Mathematics and Computing Science Rijksuniversiteit.
CMSELCMSEL Hanyang Univ. Differences in Thin Film Growth Morphologies of Co-Al Binary Systems using Molecular Dynamics Simulation : In cases of Co on Co(001),
Kinetics of ordering and metastable phase of alloys Jun Ni Department of Physics Tsinghua University.
MORPHOLOGY AND STRAIN-INDUCED DEFECT STRUCTURE OF FE/MO(110) ULTRATHIN FILMS: IMPLICATIONS OF STRAIN FOR MAGNETIC NANOSTRUCTURES I. V. Shvets Physics Department.
Alloy Formation at the Co-Al Interface for Thin Co Films Deposited on Al(001) and Al(110) Surfaces at Room Temperature* N.R. Shivaparan, M.A. Teter, and.
Epitaxial Overlayers vs Alloy Formation at Aluminum- Transition Metal Interfaces Richard J. Smith Physics Department Montana State University Bozeman MT.
A Level-Set Method for Modeling Epitaxial Growth and Self-Organization of Quantum Dots Christian Ratsch, UCLA, Department of Mathematics Russel Caflisch.
Alloy Formation at the Epitaxial Interface for Ag Films Deposited on Al(001) and Al(110) Surfaces at Room Temperature* N.R. Shivaparan, M.A. Teter, and.
Shells and Supershells in Metal Nanowires NSCL Workshop on Nuclei and Mesoscopic Physics, October 23, 2004 Charles Stafford Research supported by NSF Grant.
Glass-Like Behavior in General Grain Boundary During Migration
One-dimensional Ostwald Ripening on Island Growth An-Li Chin ( 秦安立 ) Department of Physics National Chung Cheng University Chia-Yi 621 Taiwan, ROC Prof.
Applications of MeV Ion Channeling and Backscattering to the Study of Metal/Metal Epitaxial Growth Richard J. Smith Physics Department Montana State University.
Faceting Transition of Gold Nano Materials Yanting Wang Advisors: Prof. Stephen Teitel, Prof. Christoph Dellago May 22, 2003 Department of Physics and.
7th Sino-Korean Symp June Evolution of Ni-Al interface alloy for Ni deposited on Al surfaces at room temperature R. J. Smith Physics Department,
Optical properties and carrier dynamics of self-assembled GaN/AlGaN quantum dots Ashida lab. Nawaki Yohei Nanotechnology 17 (2006)
Quantum Electronic Effects on Growth and Structure of Thin Films P. Czoschke, Hawoong Hong, L. Basile, C.-M. Wei, M. Y. Chou, M. Holt, Z. Wu, H. Chen and.
CMP Seminar September 22, Growth and Structure of Thin Fe Films on the Ti-Al Interface C. V. Ramana Montana State University
Spintronics and Graphene  Spin Valves and Giant Magnetoresistance  Graphene spin valves  Coherent spin valves with graphene.
Lattice gas models and Kinetic Monte Carlo simulations of epitaxial crystal growth Theoretische Physik und Astrophysik & Sonderforschungsbereich 410 Julius-Maximilians-Universität.
Molecular Dynamic Simulation of Atomic Scale Intermixing in Co-Al Thin Multilayer Sang-Pil Kim *, Seung-Cheol Lee and Kwang-Ryeol Lee Future Technology.
(In,Ga)As/(Al,Ga)As quantum wells on GaAs(110) R. Hey, M. Höricke, A. Trampert, U. Jahn, P. Santos Paul-Drude-Institut für Festkörperelektronik, Berlin.
PC4259 Chapter 5 Surface Processes in Materials Growth & Processing Homogeneous nucleation: solid (or liquid) clusters nucleated in a supersaturated vapor.
University of Illinois Frederick Seitz Materials Research Laboratory Dislocation-Driven Surface Dynamics on Solids Sanjay V. Khare 1, Suneel Kodambaka,
Organic Molecules on Insulating Surfaces Investigated by NC-AFM June 10 th, 2006 ETH Zurich, Switzerland Enrico Gnecco NCCR Nanoscale Science University.
Atomic Scale Understanding of the Surface Intermixing during Thin Metal Film Growth 김상필 1,2, 이승철 1, 정용재 2, 이규환 1, 이광렬 1 1 한국과학기술연구원, 계산과학센터 2 한양대학교, 재료공학부.
II. Structure of Surfaces
Crystal-Air surface Interphase boundary Grain boundary Twin Boundary Stacking Faults Crystal Boundary Crystal-Crystal Low angle High angle 2D DEFECTS (Surface.
Nanowires and Nanorings at the Atomic Level Midori Kawamura, Neelima Paul, Vasily Cherepanov, and Bert Voigtländer Institut für Schichten und Grenzflächen.
Atomic Scale Computational Simulation for Nano-materials and Devices: A New Research Tool for Nanotechnology Kwang-Ryeol Lee Future Technology Research.
K.R. Roos, F. Meyer zu Heringdorf, et al. J. Phys: Cond. Mat. 17 (2005) S1407 Diffusion Made Visible DMR James H. Craig, Jr. Kelly R. Roos The.
Li ion diffusion mechanism in the crystalline electrolyte γ- Li 3 PO 4 The structure of thin film battery 3 Solid state electrolyte could be made very.
Simulating extended time and length scales using parallel kinetic Monte Carlo and accelerated dynamics Jacques G. Amar, University of Toledo Kinetic Monte.
Sputter deposition.
Computational Solid State Physics 計算物性学特論 第3回
EEW508 II. Structure of Surfaces Surface structure Rice terrace.
U Tenn, 4/28/ Growth, Structure and Pattern Formation for Thin Films Lecture 1. Growth of Thin Films Russel Caflisch Mathematics Department Materials.
Epitaxial superconducting refractory metals for quantum computing
Growth evolution, adatom condensation, and island sizes in InGaAs/GaAs (001) R. Leon *, J. Wellman *, X. Z. Liao **, and J. Zou ** * Jet Propulsion Laboratory,
The International Conference On Metallurgical Coatings And Thin Films ICMCTF 2005 CMSELCMSEL Hanyang Univ. Co/CoAl/Co Trilayer Fabrication Using Spontaneous.
Molecular Dynamics Study of Ballistic Rearrangement of Surface Atoms During Ion Bombardment on Pd(001) Surface Sang-Pil Kim and Kwang-Ryeol Lee Computational.
Dynamics of Surface Pattern Evolution in Thin Films Rui Huang Center for Mechanics of Solids, Structures and Materials Department of Aerospace Engineering.
DAMAGE SPREADING PHASE TRANSITIONS IN A THEMAL ROUGHENING MODEL Yup Kim with C. K. Lee Kyung Hee Univ. Ref.: 1. Yup Kim and C. K. Lee, Phys. Rev E 62,
In-situ Scanning Tunneling Microscopy Study of Bismuth Electrodeposition on Au(100) and Au(111) S.H. Zheng a, C.A. Jeffrey a,b, D.A. Harrington b E. Bohannan.
Christian Ratsch, UCLACSCAMM, October 27, 2010 Strain Dependence of Microscopic Parameters and its Effects on Ordering during Epitaxial Growth Christian.
CMSELCMSEL Hanyang Univ. 자성재료 박막의 증착 거동에 대한 분자동역학연구 김상필, 이승철 *, 이광렬 *, 정용재 한양대학교 세라믹공학과, *KIST 미래기술연구본부 제 23 회 한국진공학회 학술발표회.
Lecture 3 More on Adsorption and Thin Films 1.Monolayer adsorption 2.Several adsorption sites 3.Thin Films (S ~ constant, multilayer adsorption) 1Lecture.
Interface Dynamics in Epitaxial Growth Russel Caflisch Mathematics Department, UCLA.
Pattern Formation via BLAG Mike Parks & Saad Khairallah.
Experiments on low-temperature thin-film growth carried out by Stoldt et al [PRL 2000] indicate that the surface roughness exhibits a complex temperature.
Multiscale Modelling of Nanostructures on Surfaces
Non-equilibrium Steady State & Nano-patterning in Si(001) Homoepitaxy
Surface diffusion as a sequence of rare, uncorrelated events
Surfaces and Multilayers &
Corneliu Buda,1 Matthew Neurock,1 Cathy Chin2 and Enrique Iglesia2
Phase Diagrams for Surface Alloys
Molecular Dynamics Study on Deposition Behaviors of Au Nanocluster on Substrates of Different Orientation S.-C. Leea, K.-R. Leea, K.-H. Leea, J.-G. Leea,
Criteria of Atomic Intermixing during Thin Film Growth
Molecular Beam Epitaxy (MBE) C Tom Foxon
Film Formation   1. Introduction Thin film growth modes.
Christian Ratsch, UCLA, Department of Mathematics
2005 열역학 심포지엄 Experimental Evidence for Asymmetric Interfacial Mixing of Co-Al system 김상필1,2, 이승철1, 이광렬1, 정용재2 1. 한국과학기술연구원 미래기술연구본부 2. 한양대학교 세라믹공학과 박재영,
Growth Behavior of Co on Al(001) substrate
Sang-Pil Kim and Kwang-Ryeol Lee Computational Science Center
Film Nucleation and Growth
Stochastic particle-level modeling of nanocluster formation and coarsening on surfaces: Cluster diffusion & coalescence Jim Evans, Alex Lai, Da-Jiang Liu,
Presentation transcript:

ATOMISTIC MODELS FOR LOW-TEMPERATURE EPITAXIAL GROWTH OF METAL FILMS Modeling & Simulation: Kyle Caspersen, Maozhi Li, Jim Evans STM Expt: C. Stoldt, A. Layson, E. Cox, C. Chung, Patricia Thiel Iowa State University $$$ NSF Grant CHE K F=0.004 ML/sec STM Images: 150  150 nm 2 Left Frame: 0.35 ML Right Frame: 1.10 ML Cox, Li, Chung, Ghosh, …Jenks, Evans & Thiel, Phys. Rev. B 71 (2005) KINETICALLY CONTROLLED GROWTH STRUCTURES IN LOW-T EPI GROWTH

OVERVIEW: T-DEPCE of HOMOEPITAXIAL vs HETERO GROWTH HOMOEPI GROWTH HETERO GROWTH W T W T Low-Temperature High-Temperature Far-From-Equilibrium Near-Equilibrium Kinetic Roughening Frank-van der Merwe (Layer-by-Layer Growth) Continuous films: Volmer-Weber Amorphous or Granular or… (or Stranski-Krastanov) High-T Equilibrium: determine by minimization of free energy (surface energy; strain) Low-T Non-Equilibrium: goal is to develop atomistic models which can predict the rich variety of far-from-equilibrium film morphologies ROUGHNESS (at fixed coverage) ROUGHNESS (at fixed coverage)

Film Roughness W (units = interlayer spacing) High-T Mounding Low-T Self-affine Stoldt, Caspersen, Bartelt, Jenks, Evans & Thiel, PRL 85, 800 (2000) 25ML PRB 64, (2001).PRB 63, (2001). OVERVIEW: TEMPERATURE-DEPENDENCE OF AG/AG(100) FILM GROWTH  Terrace diffusion inoperative  Self-affine surface structure  Overhangs form and then internal vacancies or voids: Restricted Downward Funneling and low-barrier interlayer diff.n  Terrace diffusion is active (hop rate = h; E act = 0.4eV)  Formation of near-square 2D islands in each layer  Growth instability (mounds) due to small step-edge barrier (h<h) For T>150K see also: Constantini et al. Surf. Sci. 459 (2000) Bartelt & Evans, Surf. Sci. 423 (1999) F h h h h K (deposition temperature)

0.50ML 1.00ML0.75ML 0.25ML [110] [100] KMC SIMULATION (100  100 nm 2 images) T=300K F=0.055ML/s Terrace Diffusion: E act = 0.40eV Rapid Edge Diffn: E act = 0.25eV  compact island growth shapes Caspersen et al., PRB 63 (2001) K: PROTOTYPE FOR “LAYER-BY-LAYER” GROWTH ONSET OF 2 ND LAYER POPULATION after Island ~0.3ML SIGNIFICANT 2 ND LAYER POPULATION after Island ~0.75ML* *exceeds standard continuum percolation value of ~0.7ML QUASI-LAYER-BY-LAYER GROWTH for up to ~30ML

190K 230K 260K 300K 5ML 25ML 60ML 100ML 10ML

300K: UNEXPECTED VERY ROUGH GROWTH FOR >30ML GROWTH REGIMES: (i) INITIAL QUASI-LBL …expected behavior (ii) MOUNDS FORM & SIDES STEEPEN (iii) SLOPE SELECTION & COARSENING Film Roughness W (in units of interlayer spacing) Modeling with small non-uniform step-edge barrier (E act =0.07eV) Caspersen et al., PRB 65 (2002) ONSET OF GROWTH INSTABILITY W  (ML)

MODELING OF Ag/Ag(100) GROWTH BELOW 150K Transient Mobility Downward Funneling (DF) Restricted DF (RDF) ADSORPTION SITES FOR RDF: LOW-BARRIER INTERLAYER DIFF. PROCESSES DF for 25ML films FILM ROUGHNESS (W) vs. T RDF + interlayer 25ML films Early Models for Smooth Low-T Growth Transient mobility: Egelhoff et al. PRL (89) Downward Funneling: Evans et al. PRB (90) Refinements: Restricted Downward Funneling (RDF) Analysis: MD-DePristo et al. (90’s); KMC-ISU group HOT ADATOM Stoldt et al. PRL 80 (2000); Caspersen & Evans, PRB 64 (2001)

OTHER STUDIES:  Kelchner & DePristo, Surf. Sci 393 (97): direct low T  overhangs; voids  Caspersen & Evans PRB 64 (2001): Detailed KMC modeling of Ag/Ag(100) growth Explores kinetic roughening, inverse ES barrier to climbing up, compacting via PD  Montalenti, Sorensen, Voter PRL 87 (2001): Temp - accelerated MD for Ag/Ag(100) Explores “steering effects”& RDF, multi-atom moves, compacting via PD  Henkelman & Jonsson PRL 90 (2003): Off-lattice KMC with unrestricted TS search: Explores multi-atom moves in smooth growth of Al/Al(100). T=0K

Ag/Ag(111): TEMPERATURE-DEPENDENCE of ISLAND GROWTH SHAPES (a)120K (b) 135K Triangular Dendrites (c) 150K (d) 165K Isotropic Fat Fractals (e) 180K (f) 200K Distorted Hexagons Terrace diffusion: E act =0.1eV  very active well below 100K Cox et al. PRB 71 (05) Slow Edge Diffusion: E act  0.3eV  inefficient shape relaxation/shape instability VT-STM IMAGES (300  300 nm 2 ) KMC SIMULATIONS (~ 300  300 nm 2 )

Ag/Ag(111): ATOMISTICS OF KINETICALLY CONTROLLED GROWTH SHAPES Distinct A- and B-type step edges border any compact island: A & B step energies almost identical  Equilibrium island shape = hexagon Deviations from 6-fold symmetry (triangular dendrites & distorted hexagons) observed in island growth shapes reflect a “kinetic anisotropy”… the Corner Diffusion Anisotropy Discussed for Pt/Pt(111) by Hohage et al. PRL 76 (96); Al/Al(111) by Ovesson et al. PRL 83 (99) …unequal A & B step energies (both thermodynamic & kinetic symmetry breaking) Ag/Pt(111) by Brune et al. Surf. Sci. 349 (96) Distorted hexagons at K: adatoms aggregating at corners more likely to hop to A-steps  A-steps advance more quickly and thus tend to “grow out” Triangular dendrites at K: adatoms aggregating at single atoms more easily relax to B-steps than A-steps  fingers grow out from A-steps faster E. Cox, M. Li, P.-W. Chung, C. Ghosh, T. Rahman, J.W. Evans, P.A. Thiel, Phys. Rev. B 71 (2005), in press.

135K: 200  200 nm 2 3ML 150K: 123  123 nm 2 3ML 180K: 350  350 nm 2 4ML Dendritic mounds (  -envelopes) Isotropic fat fractal mounds Distorted hexagonal mounds Ag/Ag(111): MOUNDED MULTILAYER GROWTH MORPHOLOGIES Ag/Ag(111) barriers: E act =0.10eV (terrace diff);  0.3eV(edge diff); =0.15eV(step edge) Large step-edge barrier to downward transport  rapid roughening & wedding-cake-like mounds Ag/Ag(111) is the prototype for rough “Poisson growth” (limited interlayer transport) even at 300K cf. Ag/Ag(100) barriers: E act =0.40eV (terrace diff);  0.25eV (edge diff); =0.07eV (step edge) Key observation: submonolayer island structure propagated into multilayer morphology

SIMULATION OF AG/AG(111) GROWTH AT 150K KMC SIMULATION …extending model for submonolayer deposition to the multilayer regime T=150K F=0.0035ML/s  =2ML Image size: 500  500 sites Large ES barrier

Ag/Ag(111): STACKING-FAULT ISLANDS (LOW-T KINETIC EFFECT) 0.3 ML Ag/Ag(111) at 120 K STACKING-FAULT ISLAND POINTS IN “WRONG DIRECTION” ATOMS RESIDE ON HCP (NOT FFC) THREE-FOLD HOLLOW SITES SMALL CLUSTERS TRANSITION BETWEEN FCC AND HCP SITES: EE HCP FCC Prob(HCP)/Prob(FCC) = exp(-  E/kT) with  E  cluster size OBSERVED FRACTION OF HCP DETERMINED BY  E FOR LARGEST MOBILE CLUSTER AT THAT TEMP. LOWER T  LESS MOBILE CLUSTERS  LOWER  E  MORE HCP Michely et al. PRL 91 (2003) for Ir/Ir(111)

Ag/Si(111)7  7 AT LOW-TEMPERATURE Pb/Si(111)7  7 at 15 K Horn-von Hoegen, Henzler, Meyer in “Morphological Organization in Epitaxial Growth…” (World Sci., 1998) …small Ag clusters inside both halves of 7  7, corner holes Henzler et al. Surf. Sci. (01); PRB 65 (02) QUENCH-CONDENSED (QC) FILMS OF Ag, Pb, Au,… on HOPG or glass etc. CONDUCTION ONSET Amorphous-to-Crystalline Transition: atoms stick where land  amorphous structure; Converts when thick enough to overcome substrate interaction; utilizes heat of condensation;… Danilov et al., PRB (95) JLTP (96) 3D Islands Merging: conduction via tunneling Strongin, Dynes,…. Stacks of plate-like islands: approx. 2 layers for conduction Valles et al. PRB (98); PRL (99)

CONCEPTS AND TECHNIQUES FOR LOW-T DEPOSITION: DYNAMICS OF DEPOSITION…and assoc. pathways to induce nano-crystallinity Transient mobility, knock-out, downward funneling,… (Evans, PRB 91) EFFICIENCY OF ENERGY DISSIPATION: can be restricted due to stiff substrate; limited vibrational energy transport through topologically disordered amorphous film? VERY-LOW BARRIER MULTI-ATOM REARRANGEMENT PROCESSES ACCELERATED-MD TECHNIQUES: bridge gap between time-scales accessible In between conventional MD (~10 -6 sec) and deposition processes (~10 3 sec): temperature-accelerated dynamics; hyperdynamics, parallel replica dynamics [Voter and coworkers, PRL 87 (2001) ] OFF-LATTICE KMC WITH AUTOMATED TRANSITION-STATE SEARCH …on-the-fly or self-teaching KMC exploiting the dimer-method for TST searches [Jonsson and coworkers, PRL 90 (2003) ] OFF-LATTICE KMC FOR STRAINED-LAYER HETEROEPITAXY: onset of dislocations after critical thickness; SK-growth …so far just for 1+1D models [Biehl and co-workers, EPL 63 (2003) 14; 56 (2001) 791]

Ag DEPOSITION ON 5-FOLD AlPdMn QUASICRYSTAL (QC !) Fournee et al. (ISU group) PRB 67 (03); Surf. Sci. 537 (03) Motivation: five-fold QC order of the substrate might be propagated into metal overlayer. A 1-element quasicrystal valuable for studies of..  GROWTH AT 300K (i) <0.5ML: nucleation of islands at “trap” sites (ii) 1-2 ML: development of 3D needle-like islands (iii) >2ML: lateral spreading (iv) >10ML: hexagonal wedding-cake mounds as for 300K, but with overall 5-fold symmetry GROWTH AT LOW T~130K …smoother, avoids growth of 3D needle-like islands