1Confidential Proprietary MV MOSFETs Customer Presentation Hyper Device Division MOS Device BU Apr 2014

2Confidential Proprietary Middle Voltage MOSFET Target application –Multi cells Li-ion battery protection –Motor –Primary side switch –Secondary side switch End Products –ESS(Energy Storage System) –Power tool –E-bike –Power supply

3Confidential Proprietary Application of Multi-Cells Battery Energy Storage System and Electric Bike. etc Example : Multi-Cells Application Solar panel Lithium-ion Energy Storage System Energy Bus System [Charge System] Protection IC LV5117AV Cell balancing Driver Detection Delay Shutdown Control Battery Cells Gate Drive Pch High Side Switches + - Charger LOAD AFE LC Cell balancing Driver Charge Pump circuit Shutdown Control Battery Cells Nch High Side Switches + - Charger LOAD Use of efficiency energy of a solar panel. Efficiency use of natural energy and storage systems.

4Confidential Proprietary Application of E-Bike and P-Tool TO-220 TO-220F TO-263 ATPAK Cell balancing Driver Charge Pump circuit Shutdown Control Battery Cells Nch High Side Switches + - Charger LOAD Controller Driver Vin Nch-3phase Motor Drive Circuit M Motor Battery Motor Battery

5Confidential Proprietary Selection guide for Multi Cells Li-ion battery End productNumber of cells In series Conventional electrode such as Li-Co, Li-Mn. Maximum Cell Voltage:4.2V LiFePO, new type of electrode. Maximum cell voltage:3.6V Recommended VDSS Voltage Power tools3 Cells12.6V10.8V20V~30V Power tools4 Cells16.8V14.4V30V~40V Power tools5 Cells21.0V18.0V40V~50V Electric bikes & tools7 Cells29.4V25.2V50V~60V Electric bikes & tools10 Cells42.0V36.0V60V~75V Electric bikes13 Cells54.6V46.8V75V ~90V Electric bikes14 Cells58.8V50.4V75V~100V Electric bikes16 cells--57.6V75V~100V “Maximum cell voltage“ indicates the battery voltage according to the number of cells. “Recommended VDSS Voltage” indicates the required VDSS voltage of the FET depending on the number of cells. The maximum cell voltage varies depending on its positive electrode materials, so the recommended voltage also varies.

6Confidential Proprietary LV5117AV 5 cells to 14 cells Pch Hi-Side System [5 cells to 14 cells] ･ BBS V 100 A RDS(on) 4.4mohm ･ ATP V 100 A RDS(on) 5.0mohm ･ SMP V 100 A RDS(on) 6.2mohm *RDS(on) is typical value Middle voltage and small size FETs 6HN04CHA*/6HP04CHA* (Nch/Pch60V) CPH3462*/CPH3362*(Nch/Pch100V1A) P channel Application for 5 cells to 14 cells *Under development

7Confidential Proprietary LC05130JA 5 cells to 14 cells Nch Hi-Side System [5 cells to 14 cells] ･ NDBA170N06A 60 V 170 A RDS(on) 2.5 mohm ･ ATP V 100 A RDS(on) 2.8 mohm ･ NDAT070N10B 100 V 70 A RDS(on) 10.4 mohm ･ NDAT100N10B 100 V 100 A RDS(on) 6.4 mohm *RDS(on) is typical value FETs for cell balance ･ 3LN01SS Nch 30 V N channel Application for 5 cells to 14 cells

8Confidential Proprietary Motor current App. Device Map for Motor(inverter)

9Confidential Proprietary V DSS (V) | | | | | | | MV MOSFETs Portfolio Roadmap Production Development Planning T2 Series Pch & Nch 100 V 75 V 60 V SSG5 Nch 100 V SSG5 Nch 80 V SSG5 Nch 250V 200V 150V T4 Series Pch & Nch 90 V 75 V 60 V 40 V 30 V | | | | Now CY

10Confidential Proprietary ATPAK Features D2PAK ATPAK Wire Bonding Clip Bonding Clip Bonding Tech. Mount area: 50% smaller Volume: 80% reducedHeight: 65% reduced Clip bond structure helps realize: ・ ・ The industry’s largest rated current 100A ： equivalent to D2PAK (TO-263) ・ 1.5 ｍｍ package thickness ・ PD 4.5W with heat sink installed SOIC8 DPAK ATPAK D2PAK D2PAK=13.4x10.0x4.5mm ATPAK=9.5x6.5x1.5mm Package size.

11Confidential Proprietary Heat Simulation Heat Simulation BBS3002 and ATP304 Thickness ： 1mm VGS= -10V ID=20A Test Circuit Condition VGS=-10V ID=20A Ta=25℃ 68mm TEST Board 40mm ATPAK Mount area D2PAK Mount area Because of the structure of heat dissipation in the entire Pkg, ATPAK release the heat from surface. (Higher than D2PAK even if the same channel temperature). It can reduce the heat effectively in the same mount area by using a parallel to ATPAK. *Tch:Simulation result, Ta=25 ℃ BBS3002(D2PAK) 60V/4.4mΩ ATP304 (ATPAK) 60V/5.0mΩ ATP304 /BBS3002 比較 D2PAK 1 parallel Mount area 152mm 2 ATPAK 1 parallel Mount area 155mm 2 Area rate ： 47% RDSON ： 0.3mΩ up Tch ： 8.4 ℃ up Comparison of D2PAK1 and ATPAK 2parall Area rate ： 102% RDSON ： 1.9mΩ down Tch ： 27 ℃ down D2PAK 2 parallels Mount area 333mm 2 ATPAK 3parallels Mount area 243mm 2 Area rate ： 47% RDSON ： 0.2mΩ up Tch ： 6.0 ℃ up Comparison of D2PAK2 and ATPAK 3parallel Area rate ： 73% RDSON ： 0.5mΩ down Tch ： 4.5 ℃ down RDSON ： 2.2mΩ Tch ： 48.7 ℃, ⊿ T=23.7 ℃ RDSON ： 2.5mΩ Tch ： 56.0 ℃, ⊿ T=31.0 ℃ RDSON ： 1.7mΩ Tch ： 44.2 ℃, ⊿ T=19.2 ℃ t=4.5mm RDSON ： 4.4mΩ Tch ： 83.5 ℃, ⊿ T=58.5 ℃ Heat radiation from Drain to Board. Heat radiation using surface of the device. D2PAKATPAK Tch measurement point

12Confidential Proprietary ATPAK Power Dissipation : Recommended radiating method ＊ PD is more doubled by mounting a heat sink! ＊ PD is same as that of TO- 220, mounting a heat sink which is 30% less than that of TO-220! ＊ It makes possible ultra- thin mounting! ＊ PD is more doubled by mounting a heat sink! ＊ PD is same as that of TO- 220, mounting a heat sink which is 30% less than that of TO-220! ＊ It makes possible ultra- thin mounting! PD-AL heat-sink area (Ta=25 ℃ ) AL heat-sink area – mm2 No heat-sink ATPAK and Al heat-sink TO-220+AL heat-sink ATPAK (No heat-sink) ATPAK(No heat-sink) ATPAK And Cu heat-sink ATPAK+AL heat-sink TO-220+AL heat-sink ScrewClamping torqueAxial force M3 0.2~0.8N ・ m 0.33~1.33N

13Confidential Proprietary ATPAK Position Map ・ ・ The industry’s highest performance in Pch DPAK size products ・ ・ Have lineup suitable for many applications

14Confidential Proprietary ATPAK Pch-MOSFET Series Products Offering & Schedule ON target

15Confidential Proprietary ATPAK Nch-MOSFET Series Products Offering & Schedule

16Confidential Proprietary TO-263(D2PAK) MOSFET Series Products Offering & Schedule

17Confidential Proprietary TO-220 and TO-220F MOSFET Series Products Offering & Schedule

18Confidential Proprietary Packages

19Confidential Proprietary Key Question VDSS Voltage VGSS Voltage RDS(on) at VGS xx V Number of cells Number of parallel FETs N-Channel/P-Channel Key Question VDSS Voltage VGSS Voltage RDS(on) at VGS xx V Number of cells Number of parallel FETs N-Channel/P-Channel Key Things to ask your Customer Applications/Business product VDSS Voltage VGSS Voltage RDS(on) at VGS xx V Number of cells Number of parallel FETs Channel Polarity comments Optional Question Competitor Optional Question Competitor

20Confidential Proprietary