Nitride Superlattice Thin Films for Superhard Coatings Ramou Akin-Cole MRSEC Program 2004 Advisor: Paul Salvador Graduate Student: Nitin Patel.

Slides:

Advertisements

Similar presentations

Pulsed laser deposition of oxide epitaxial thin films

Advertisements

Structural Properties of Electron Beam Deposited CIGS Thin Films Author 1, Author 2, Author 3, Author 4 a Department of Electronics, Erode Arts College,

Influence of Substrate Surface Orientation on the Structure of Ti Thin Films Grown on Al Single- Crystal Surfaces at Room Temperature Richard J. Smith.

Advanced Coatings and Surface Engineering Laboratory Surface Engineering Task Repot 2009/2/10.

Another “Periodic” Table!. Growth Techniques Ch. 1, Sect. 2, YC Czochralski Method (LEC) (Bulk Crystals) –Dash Technique –Bridgeman Method Chemical Vapor.

High-temperatures in-situ XRD studies of CrN and TiN films Experimental: XRD at high T Experimental: XRD at high T XRD patterns, lattice parameter evolution.

Tuesday, May 15 - Thursday, May 17, 2007

1 Sodium Doped Lanthanum Manganites Thin Films: Synthesis, Substrate Effect and Thickness Dependence Paolo Ghigna Dipartimento di Chimica Fisica “M. Rolla”,

GROWTH AND INVESTIGATION OF HALF-METALLIC Fe 3 O 4 THIN FILMS B. Vengalis, V. Lisauskas, A. Lisauskas, K.Šliužienė, V. Jasutis Semiconductor Physics Institute,

Synthesis and characterisation of thin film MAX phase alloys Mathew Guenette, Mark Tucker, Yongbai Yin, Marcela Bilek, David McKenzie Applied and Plasma.

Dr. Mansour Al Hoshan TiO 2 Nanotubes Arrays fabricated by anodizing process.

Thin Film Deposition Prof. Dr. Ir. Djoko Hartanto MSc

Thin Film Growth Applications -The Art of laying apples- ► Jarrod G Collins ► Klein Forest High School, Houston TX ► Klein ISD ► Faculty Mentor: Dr. Haiyan.

Structural and optical properties of pulsed laser deposited V 2 O 5 thin f ilms Apr 20 th, 2009 Thin film class Paper reading session Presentation by Jiajia.

SURFACE ENGINEERING (1)

Neelkanth G. Dhere and Anil Pai

CMP Seminar September 22, Growth and Structure of Thin Fe Films on the Ti-Al Interface C. V. Ramana Montana State University

McGill Nanotools Microfabrication Processes

The study of ferroelectric switching using x-ray synchrotron radiation

반도체 제작 공정 재료공정실험실 동아대학교 신소재공학과 손 광 석 隨處作主立處開眞

Zn x Cd 1-x S thin films were characterized to obtain high quality films deposited by RF magnetron sputtering system. This is the first time report of.

Characterization of CuInSe2 Thin Film Solar Cells Chukwuemeka Shina Aofolaju 1 Advisors: Dr. Eric Egwu Kalu 1 Dr. Paul Salvador 2 By 1. FAMU – FSU College.

Optical Constants of Uranium Nitride Thin Films in the EUV (7-15 nm) Marie K. Urry EUV Thin Film Group Brigham Young University.

Daniel Wamwangi School of Physics

Applying X-Ray Diffraction in Material Analysis Dr. Ahmed El-Naggar.

E. Adrián Martín Tovar and R. Castro-Rodríguez

Thin films of CZTS prepared by Pulsed Laser Deposition Andrea Cazzaniga 1 *, Rebecca Bolt Ettlinger 1, Sara Engberg 1, Stela Canulescu 1, Andrea Crovetto.

X-rays techniques as a powerful tool for characterisation of thin film nanostructures Elżbieta Dynowska Institute of Physics Polish Academy of Sciences,

The study of ferroelectric switching using x-ray synchrotron radiation Carol Thompson Science with Microbeams APS Scientific Advisory Cross-cut Review.

MacDiarmid Institute for Advanced Materials and NanotechnologyVictoria University of Wellington Andrew Preston Wellington, New.

Fabrication of (Fe,Zn) 3 O 4 -BiFeO 3 nano-pillar structure by self- assembled growth Tanaka Laboratory Takuya Sakamoto.

D.-A. Luh, A. Brachmann, J. E. Clendenin, T. Desikan, E. L. Garwin, S. Harvey, R. E. Kirby, T. Maruyama, and C. Y. Prescott Stanford Linear Accelerator.

Nanoscale Epitaxial Films of Cu 2 O 2-x An attempt to make cubic CuO Wolter Siemons MRS Spring meeting HH4.9: Novel materials Wednesday, April 19 th 2006,

Reminders Quiz#2 and meet Alissa and Mine on Wednesday –Quiz covers Bonding, 0-D, 1-D, 2-D, Lab #2 –Multiple choice, short answer, long answer (graphical.

Diffusion Effect of. Intermetallic Layers on

University of Arkansas Fayetteville, Arkansas Plasma Diagnostics for the Deposition of Nanomaterials (Alumina) Jay Mehta Undergraduate.

High Temperature Oxidation of TiAlN Thin Films for Memory Devices

ZnCo 2 O 4 : A transparent, p-type, ferromagnetic semiconductor relevant to spintronics and wide bandgap electronics Norton Group Meeting 4/1/08 Joe Cianfrone.

日期：指導老師：林克默博士學生：陳冠廷. Outline 1.Introduction 2.Experimental 3. Results and discussion 4. Conclusions.

Center for Materials for Information Technology an NSF Materials Science and Engineering Center Sputtering Procedures Lecture 11 G.J. Mankey

Develop (K 0.5 Na 0.5 )NbO 3 Lead-Free Ferroelectric Thin Films by the RF Sputtering Technique Hsiu-Hsien Su.

Frank Batten College of Engineering & Technology Old Dominion University: Pulsed Laser Deposition of Niobium Nitride Thin Films APPLIED.

MPRI Centralised Laboratories Gerrard Peters School of Physics 1.

From: S.Y. Hu Y.C. Lee, J.W. Lee, J.C. Huang, J.L. Shen, W.

Structure of Solids Chapter 11 Part III.

Thin Film Deposition. Types of Thin Films Used in Semiconductor Processing Thermal Oxides Dielectric Layers Epitaxial Layers Polycrystalline Silicon Metal.

2-D Nanostructure Synthesis (Making THIN FILMS!)

X-Ray Diffraction Analysis of Ⅲ - Ⅴ Superlattices: Characterization, Simulation and Fitting 1 Xiangyu Wu Enlong Liu Mentor: Clement Merckling EPI Group.

報告人：王禮國指導老師：林克默博士日期： Outline 1. Introduction 2. Experimental procedure 3. Results and discussion 4. Conclusions 2.

Point Contact Tunneling as a Surface Superconductivity Probe of bulk Nb and (Nb 1-x Ti x )N Thin Films Chaoyue Cao Advisor: J. Zasadzinski ANL N. Groll,

Characterization of mixed films

EBB245 Material Characterisations Lecture 2. X-ray Diffraction Methods Dr Zainovia Lockman Lecture 2. X-ray Diffraction Methods Dr Zainovia Lockman 1.

Deposition Process To grow WS 2 films, a reactive sputtering process is implemented. In reactive sputtering, Argon atoms are ionized causing them to accelerate.

Giuseppe Celentano, Fabio Fabbri, Angelo Vannozzi

Impedance Spectroscopy on Multiferroic BiFeO3 Epitaxial Thin Films

© 1997, Angus Rockett Section I Evaporation.

Deposition of polymer thin films by PVD process

MBE Growth of Graded Structures for Polarized Electron Emitters

Thin film technology, intro lecture

Low Temperature Impedance of Multiferroic BiMnO3 Thin Films

PVD & CVD Process Mr. Sonaji V. Gayakwad Asst. professor

Pulsed laser deposition (PLD) of a CZTS- absorber for thin solar cells with up to 5.2 % efficiency A. Cazzaniga1, A. Crovetto2, R. B. Ettlinger1,

Another “Periodic” Table!

Molecular Beam Epitaxy (MBE) C Tom Foxon

Critical misfit in thin film epitaxy - Example Problems

Molecular Beam Epitaxy

Epitaxial Deposition

Amorphous to Crystalline Transition in Indium Oxide Semiconductors

Joon Yang MSE Department Advisor L. Salamanca-Riba MRSEC – IRG 2

Presentation transcript:

Nitride Superlattice Thin Films for Superhard Coatings Ramou Akin-Cole MRSEC Program 2004 Advisor: Paul Salvador Graduate Student: Nitin Patel

Background  Hard materials (e.g. TiN, Al 2 O 3 ) used successfully as coatings to increase tool life by a factor of  Diamond and cubic Boron Nitride are the hardest known materials.  Diamond gets oxidized in air at high temperatures.  Cubic Boron Nitride is difficult to produce as thin film. Cutting tool in operation How can we design materials that have hardness values approaching the hardest known materials ?

Project Objectives  Study orientation effects and hardness with increasing Al content in monolithic Ti 1-x Al x N.  Grow Thin Films using Physical Vapor Deposition(PVD) Technique called Pulsed Laser Deposition.  Characterize films using X-Ray Diffraction and Nanoindenter  Grow TiN/Ti 1-x Al x N superlattices in both (100) and (111) direction. Substrate  TiN Ti 1-x Al x N TiN Ti 1-x Al x N TiN Ti 1-x Al x N TiN

Experiments SrTiO 3 (Perovskite)MgO, TiN, AlN(Rocksalt) Deposition Parameters PRESSURE : Torr TEMPERATURE:RT °C FLUENCE : 2-6 J/cm 2 FREQUENCY : 1-10 Hz COOLING: Torr

Ti 1-x Al x N films by alternating depositions Target Rate (Å/pulse) # of pulses Thickness (Å) TiN AlN0.293/ Deposit submonolayer of TiN (i.e., 1/4 unit cell thick) 2.Switch target 3.Deposit submonolayer of AlN (i.e., 1/4 unit cell thick) 4.Switch Target 5.Repeat to certain film thickness of Ti 1-x Al x N 200 nm Ti 0.5 Al 0.5 N : {9Ti / 3Al / 9Ti / 4Al} x 475

Monolithic Ti 1-x Al x N Films Intensity (a.u.) SrTiO STO (200) Ti:Al =1:0 Intensity (a.u.)

Orientation Intensities and Lattice Parameter versus Composition Intensity (a.u.) Al:Ti ratio Lattice Parameter ( Å)

TiN/Ti 0.25 Al 0.75 N multilayer MgO (111) SrTiO 3 STO (111) MgO Bragg (200) Peak Bragg (200) Peak Bragg (111) Peak MgO (200) Bragg (200) Peak MgO +1 SrTiO 3 Bragg (200) Peak STO (200) -2

Hardness versus Ti:Al ratio

Conclusion  Al was difficult to grow in crystalline form  TiN and Ti 1-x Al x N grow epitaxially in 100 direction and not in 111 direction.  Superlattices grow well in 100 direction and not in 111 orientation  The hardness values of superlattices show significant enhancement, over individual component  Optimizing processing conditions can enable the growth of (111) oriented monolithic Ti 1-x Al x N films and superlattices