Anti-Charging Methods

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Presentation transcript:

Anti-Charging Methods when electron beam lithography must be performed on insulating substrates (e.g. Quartz, SiC, soda lime, etc.) negative charge buildup can occur on the substrate surface causing beam deflection, and thus pattern distortion Initial Condition Future Condition electron beam electron beam repulsive electric potential lines ma-N 2403 glass substrate negative charge accumulation Devin K. Brown, Georgia Tech

Au on top of resist Au can be coated on top of resist to dissipate charge typically 100A is sufficient Au must be deposited with Filament Evaporation Electron beam evaporation will expose resist Au must be stripped with Potassium Iodine prior to resist development has worked well with ZEP520A on glass has not worked well with ma-N 2403 on glass (see next slide) front side Au e-beam exposure Au ma-N 2403 glass substrate Devin K. Brown, Georgia Tech

Au incompatible with ma-N 2403 Au on top of ma-N 2403 on glass substrates has not worked well Devin K. Brown, Georgia Tech

Ti/Au/Ti under resist layer Ti/Au/Ti can be coated underneath resist to dissipate charge typically 20/30/20A is sufficient can use Electron beam evaporation since deposition occurs prior to resist coating Ti/Au/Ti must remain after resist development, may not be compatible with process Ti can help with resist adhesion issues to quartz Ti/Au/Ti under resist layer e-beam exposure ma-N 2403 Ti/Au/Ti glass substrate Devin K. Brown, Georgia Tech

ESpacer ESpacer is spin coatable, no evaporation required ESpacer is water soluble compatible with ma-N 2403 Ebeam exposure must occur shortly after ESpacer application front side ESpacer e-beam exposure ESpacer ma-N 2403 glass substrate Devin K. Brown, Georgia Tech

Charging causes pattern distortion GOOD (no charging) BAD (moderate charging) BAD (severe charging) Ti/Au/Ti under resist ESpacer < 1 hour ESpacer > 24 hours no anti-charging layer front side Au Devin K. Brown, Georgia Tech

Charging causes pattern distortion & field stitch error GOOD (no charging) BAD (moderate charging) BAD (severe charging) Ti/Au/Ti under resist ESpacer > 24 hours no anti-charging layer ESpacer < 1 hour front side Au 500um field boundary field stitch error also pattern distortion Devin K. Brown, Georgia Tech