Batch 12 wafer 7 summary comparison to baseline. N+ Sheet Resistance (  / ) Wide structure method, Target = 30  /

Slides:

Advertisements

Similar presentations

MICROWAVE FET Microwave FET : operates in the microwave frequencies

Advertisements

DRAFT - NOT FOR PUBLICATION 14 July 2004 – ITRS Summer Conference ITRS FEP Challenges Continued scaling will require the introduction of new materials.

Savas Kaya and Ahmad Al-Ahmadi School of EE&CS Russ College of Eng & Tech Search for Optimum and Scalable COSMOS.

Advancing Strained Silicon A O’Neill, S Olsen, University of Newcastle P-E Hellstrom, M Ostling, KTH K Lyutovich, E Kasper, University of Stuttgart.

Physical structure of a n-channel device:

Simplified Example of a LOCOS Fabrication Process

Analog VLSI Design Nguyen Cao Qui.

University of Toronto ECE530 Analog Electronics Review of MOSFET Device Modeling Lecture 2 # 1 Review of MOSFET Device Modeling.

Digital Integrated Circuits© Prentice Hall 1995 Devices Jan M. Rabaey The Devices.

Digital Integrated Circuits© Prentice Hall 1995 Devices The MOS Transistor.

Design and Implementation of VLSI Systems (EN1600) Lecture08 Prof. Sherief Reda Division of Engineering, Brown University Spring 2008 [sources: Weste/Addison.

7.2 The Basic Gain Cell 7.3 The Cascode Amplifier

EE/MAtE1671 Front-End-Of-Line Variability Considerations EE/MatE 167 David Wahlgren Parent.

S. Reda EN160 SP’08 Design and Implementation of VLSI Systems (EN1600) Lecture 14: Power Dissipation Prof. Sherief Reda Division of Engineering, Brown.

© Digital Integrated Circuits 2nd Inverter Impact of Interconnect  Interconnection  Fundamental limitation of Digital Technology at all scales  Classes.

Prelab: MOS gates and layout

Physical States for Bits. Black Box Representations.

Design and Implementation of VLSI Systems (EN0160) Prof. Sherief Reda Division of Engineering, Brown University Spring 2007 [sources: Weste/Addison Wesley.

Carbon Nanotube Memory Ricky Taing. Outline Motivation for NRAM Comparison of Memory NRAM Technology Carbon Nanotubes Device Operation Evaluation Current.

S. Reda EN160 SP’07 Design and Implementation of VLSI Systems (EN0160) Lecture 13: Power Dissipation Prof. Sherief Reda Division of Engineering, Brown.

S. Reda VLSI Design Design and Implementation of VLSI Systems (EN1600) lecture09 Prof. Sherief Reda Division of Engineering, Brown University Spring 2008.

1 adaptive body bias for reducing process variations nuno alves 19 / october / 2006.

EE4800 CMOS Digital IC Design & Analysis

Patrick Spradlin, SCIPP trip to LLU, May 2, 2001 Detector Characteristics.

F – April 6, 2006 Dr. Fuller with EEEE688 L/W = 3/32 L/W = 16/32.

EE314 IBM/Motorola Power PC620 IBM Power PC 601 Motorola MC68020 Field Effect Transistors.

Field-Effect Transistors 1.Understand MOSFET operation. 2. Understand the basic operation of CMOS logic gates. 3. Make use of p-fet and n-fet for logic.

© Digital Integrated Circuits 2nd Devices VLSI Devices  Intuitive understanding of device operation  Fundamental analytic models  Manual Models  Spice.

Mobility Chapter 8 Kimmo Ojanperä S , Postgraduate Course in Electron Physics I.

5/24/2016 Based on text by S. Mourad "Priciples of Electronic Systems" Digital Testing: Defects, Failures and Faults.

ECE 755 / VLSI Systems Design - Volkan Kursun

1 The Physical Structure (NMOS) Field Oxide SiO2 Gate oxide Field Oxide n+ Al SiO2 Polysilicon Gate channel L P Substrate D S L W (D) (S) Metal n+ (G)

２． Transistors and Layout Fabrication techniques Transistors and wires Design rule for layout Basic concepts and tools for Layout.

Jan M. Rabaey The Devices Digital Integrated Circuits© Prentice Hall 1995 Introduction.

Electronic Devices Laboratory CE/EE 3110 Conductivity and the Hall Effect.

THE INVERTERS. DIGITAL GATES Fundamental Parameters l Functionality l Reliability, Robustness l Area l Performance »Speed (delay) »Power Consumption »Energy.

© Digital Integrated Circuits 2nd Devices Device Dr. Shiyan Hu Office: EERC 731 Adapted and modified from Digital Integrated Circuits: A.

Low Power via Sub-Threshold Circuits Mike Pridgen.

An ASIC Design methodology with Predictably Low Leakage, using Leakage-immune Standard Cells Nikhil Jayakumar, Sunil P Khatri ISLPED’03.

The George Washington University School of Engineering and Applied Science Department of Electrical and Computer Engineering ECE122 – Lab 7 MOSFET Parameters.

D.K. BrownGeorgia Tech Microelectronics Research Center1 1um CMOS Process Baseline Electrical Test Summary Georgia Tech Microelectronics Research Center.

Digital Integrated Circuits© Prentice Hall 1995 Devices Jan M. Rabaey The Devices.

UNIT I MOS TRANSISTOR THEORY AND PROCESS TECHNOLOGY

Chapter 12 : Field – Effect Transistors 12-1 NMOS and PMOS transistors 12-2 Load-line analysis of a simple NMOS amplifier 12-3 Small –signal equivalent.

EE141 © Digital Integrated Circuits 2nd Devices 1 Lecture 5. CMOS Device (cont.) ECE 407/507.

EE141 © Digital Integrated Circuits 2nd Devices 1 Goal of this lecture  Present understanding of device operation  nMOS/pMOS as switches  How to design.

CMOS Fabrication nMOS pMOS.

Terminal Impedances Eq Eq Eq

Master in Microelectronics technology and Manufacturing Management E. Sicard - introducting 90nm 4. Introducing 90nm technology.

Chapter 6 Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved. High-Speed CMOS Logic Design.

EEE 490 Fall 2000, Dr. Thornton Hybrid Molecular MOS Transistor EEE 490 Final Presentation.

BR 1/991 FPGA Timing Models Most FPGA and CPLD vendors provide a timing model in their data sheets that allow estimation of path delays. Some example path.

EE 466/586 VLSI Design Partha Pande School of EECS Washington State University

IH2655 Seminar January 26, 2016 Electrical Characterization,B. Gunnar Malm

Linear Regulator Fundamentals

Damu, 2008EGE535 Fall 08, Lecture 21 EGE535 Low Power VLSI Design Lecture #2 MOSFET Basics.

SINTEF Wafers We studied two wafers. Wafer #9 and wafer #24. Most of the measurements were done on wafer #9. Road map of the wafer would be helpful. We.

Wrong Presentation Put In

Testing PXD6 - testing plans

Hire Toyota Innova in Delhi for Outstation Tour

How To Add A Xerox Printer To Google Chrome

Frio River Cabins - Frio Vacation Homes - Frio Country Resort

Firebase Vs. MongoDB: Choose the Best Database of 2019

Status of Hamamatsu Silicon Sensors

Presentation transcript:

batch 12 wafer 7 summary comparison to baseline

N+ Sheet Resistance (  / ) Wide structure method, Target = 30  /

N+ Sheet Resistance wafer map wafer flat

N+ sheet resistance statistics

P+ Sheet Resistance (  /) Wide structure method, Target = 39  /

P+ sheet resistance statistics

Poly Sheet Resistance (  /) Wide structure method, Target = 49  /

Poly Sheet Resistance wafer map wafer flat

Poly wide sheet resistance statistics

Poly CD Narrow #1 & #2 (  m) Target = 2  m

Poly CD statistics

Poly COMB leakage (A) Target = 1E-12 A

Poly COMB leakage statistics

Poly Serpentine Resistance (  ) Target = 166 k 

Poly serpentine resistance statistics

NMOS & PMOS Threshold Voltage (V) W=5  m, L=varying*

NMOS & PMOS Threshold Voltage (V) W=10  m, L=varying*

VT w=10, l=5um statistics

NMOS & PMOS Threshold Voltage (V) W=50  m, L=varying*

NMOS & PMOS Saturation Current (A) W=5  m, L=varying*, Log10 scale

NMOS & PMOS Saturation Current (A) W=10  m, L=varying*, Log10 scale

NMOS & PMOS Saturation Current (A) W=50  m, L=varying*, Log10 scale

NMOS & PMOS Off Current (A) W=5  m, L=varying*, Log10 scale

NMOS & PMOS Off Current (A) W=10  m, L=varying*, Log10 scale

NMOS & PMOS Off Current (A) W=50  m, L=varying*, Log10 scale

N+ Contact Resistance (  ) Target = 0.1 

N+ contact resistance statistics

N+ Contact Chain Resistance (  ) Target = 5k 

N+ contact chain resistance statistics

P+ Contact Resistance (  ) Target = 1 

P+ contact resistance statistics

P+ Contact Chain Resistance (  ) Target = 4 k 

P+ contact chain resistance statistics

Poly Contact Resistance (  ) Target = 0.1 

poly contact resistance statistics

Poly Contact Chain Resistance (  ) Target = 4.9 k 

poly contact chain resistance statistics

M1 COMB leakage (A) Target = 1E-12A

M1 COMB leakage statistics

M1 Serpentine Resistance (  ) Target = 85 

M1 Serpentine Resistance wafer map

M1 serpentine resistance statistics

M1 Van der Pauw Sheet Resistance (m  /) target = 56.7 m  / very high resistance

M1 sheet resistance statistics

M2 to M1 Via Resistance (  ) Target = 0.1  Batch 4 & 5 did not receive M2 processing

Via1 resistance statistics

M2 to M1 Via Chain Resistance (  ) Target = 19 

Via1 contact chain resistance statistics

M2 Van der Pauw Sheet Resistance (m  /) target = 42.5 m  / very high resistance batches 4 & 5 didn’t receive M2 processing

M2 sheet resistance statistics