For High Quality Film Deposition Corial D250 A PECVD Equipment For High Quality Film Deposition

Equipment Control & Software COSMA Software with: Edit menu for process recipe edition, Adjust menu for process optimizing, Maintenance menus for complete equipment control and service via internet with VPN (Virtual Private Network). CORS Software for: Data reprocessing (Measures and data comparison).

A Tool Organized in Successive Levels Actions Constructor Lots Process Closed-loop Server for GUI COSMA Supervisor Embedded control PU Embedded control function COSMA Controller Process Controller Device Controllers Physical devices Operator Remote GUI PC User Monitoring

Diagram Modes Stand-by Mode Production Optimization Constructor Errors Stand-by Mode Step by step Production Optimization Constructor Shut down Operator Production Normal Maintenance Constructor

A Communicant Tool Firewall WAN VPN ADSL Fix IP Dedicated Ethernet network COSMA Supervisor COSMA GUI Customer Ethernet Network Process Control Unit (1) Process Control Unit (2) Device Control (1) Ethernet Device Control (2)

System Match Box Reactor TMP Shuttle Lift Gas Box TMP Control RF Generator TMP Control Reactor TMP Gas Box

System Match Box Gate valve Process pumping port Lift TMP Electronic control Process pumping port Lift Gate valve Match Box Gas box TMP

Principle of PECVD Reactor Vacuum Chamber Cathode (Gas inlet) Shuttle Compressed Air Lift TMP

Principle of PECVD Reactor Vacuum Chamber Cathode (Gas inlet) Compressed Air Lift Shuttle TMP

Principle of PECVD Reactor Vacuum Chamber Cathode (Gas inlet) Infra-red reflectors Heating cable Shuttle Lift Process pump Compressed Air TMP

Principle of PECVD Reactor Laser Interferometer Vacuum Chamber Cathode (Gas inlet) Process pump RF Match P L A S M A Infra-red reflectors Heating cable Shuttle Lift Compressed Air TMP

PUMPING PRINCIPLE of PLASMA REACTOR Gas inlet Pumping ring Vertical pipes Low half pumping ring Process pump

Symetricalreactor for low stress deposition Process pump Shuttle Down Shuttle Up Symetricalreactor for low stress deposition Pumping pipe

Reactor Lift Shuttle in Up position Shuttle in Down position Penning gauge Process pump Lift

Lift Process pump Symetrical pumping Reactor

Outgasing from the cold walls leads to film contamination REACTOR PRINCIPLE Outgasing from the cold walls leads to film contamination Cold walls PLASMA 300°C Standard PECVD TMP Cathode Anode Pressurized reactor P2 PLASMA Roots TMP P1 P1 >> P2 No film contamination

CLEANING PRINCIPLE Walls at 300°C Close gate valve Roots TMP

CLEANING PRINCIPLE Send N2 Gas inlet P1 P2 Leaks Gate valve closed N2 goes in process chamber through the leaks Leaks Send N2 Gate valve closed Roots TMP P2 >> P1

CLEANING PRINCIPLE Send N2 No corrosion of vacuum vessel. TMP Gate valve closed Roots P2 Gas inlet P1 P2 >> P1 300°C No fluorine atoms can go in the process chamber. No corrosion of vacuum vessel.

Monitoring Deposition The latest submicron technology needs precise monitoring: Automatic endpoint detection, CCD camera with magnification = 50 X, Laser beam diameter ≤ 50 m. A CCD camera and laser diode, in the same measuring head, enables simultaneous visualization of the die surface and the laser beam impact on it. A laser spot, of diameter 20 µm, facilitates the record of interference signals.

BENEFITS In situ monitoring of deposition rate Precise thickness of deposited layers The plasma confined in a uniformly heated process chamber Excellent uniformities in thickness and refractive index. Symetrical design of the process chamber Stress control of films. In situ plasma cleaning with no corrosion of the process chamber. No memory effect No mechanical cleaning

Guaranteed Process Results Process Development Development is carried out through Design of Experiments (DOE) Optimisation of film properties: deposition rate, refractive index, uniformities (Thickness, Index), KOH, TMAH, etch rates, stress, breakdown voltage. Customer Benefit Process modelization enables fast matching with customer requirements. Guaranteed Process Results

Guaranteed Process Results Some Process Specifications Deposition process Deposition rate (nm/min) Etch rate in KOH (Si3N4) BOE (SiO2) Compres-sive stress (MPa) Breakdown voltage (MV/cm) Refractive index uniformity Deposition Uniformity Si3N4 120 <10 nm/h -150 / ±0,2% ±2% SiO2 400 -100 ±0,05% 150 260 nm/min -30 10 Guaranteed Process Results

Si3N4 Refractive Index Refractive Index Versus SiH4 and NH3 Flow Rates

Si3N4 Film Properties Stress Versus SiH4 and NH3 Flow Rates Stress = -100 MPa KOH Rate = 50 Å/h KOH Etch Rate Versus SiH4 and NH3

Stress Versus SiH4 and NH3 Flow Rates Si3N4 Film Stress Stress Versus SiH4 and NH3 Flow Rates Zero stress area

Refractive Index and RI uniformity versus pressure and N20 flow rate SiO2 Refractive Index Refractive Index and RI uniformity versus pressure and N20 flow rate Refractive Index = 1.4570 ± 0.0005 RI uniformity = ± 0.0005

SiO2 Film Properties Stress Versus Pressures and N2O Flow Rate Stress = - 50 MPa BOE Rate < 250 nm/min BOE Etch Rate Versus Pressure and N2O

SiO2 Breakdown Voltage Breakdown Voltage Versus Pressure and SiH4 = 10 MV/cm

Guaranteed Process Results Process Performance Multi-step process recipes enables perfect and stable plasma ignition. This gives rise to: Repetitive film growth, Good adhesion of films on substrate, Stable film properties. Process is terminated by an Ar or He plasma in order to scavenge the powders electrostatically trapped in the plasma. This gives rise rise to: No contamination of deposited films, Shorter plasma cleaning, No pinhole. Guaranteed Process Results

Corial D250 Description Deposition chamber, including: Vacuum vessel, Pressurized isothermal plasma reactor, Uniform heating with two heating cables Temperature control of plasma reactor with Eurotherm 2408 and computor interface, Infra-red reflectors. Electronic control, including: Physical device controllers with embedded software running on Celeron 400 MHz, 128 Mo DRAM and fast ethernet, Process controller with PC running at 1.3 GHz, 512 Mo DRAM, fast ethernet communication and 80 Go hard disk. Pumping system with: Alcatel dry pump ADP 122P (95 m3/h), Alcatel turbo pump ATH 31 C (30 l/s), Valves, Penning and two capacitance gauges, Pressure control with N2 MFC, N2 venting line. COSMA control software operating under Linux with Edit, Optimize, process Run and Maintenance menus. PC operating under Windows with: Intel Pentium processor and 512 Mo RAM, 17” LCD colour monitor, Firewall and VPN. Gas box equipped with 6 gas lines with Horiba MFCs and electropneumatic valves for SiH4, N20, NH3, N2, He and SF6 gases. 300 W RF generator and automatic match box from ENI.

Corial PECVD Features Very high quality of deposited films: Tunable refractive index Low etch rates in BOE and KOH High breakdown voltage No pinholes Excellent uniformities (thickness & refractive index) Stress control of films from tensile to compressive Efficient in situ plasma cleaning with NO corrosion of vacuum vessel, NO memory effect and NO manual cleaning required.