Institute of Ultra High frequency Semiconductor Electronics of Russian Academy of Sciences Design of monolithic microwave integrated circuits in Institute of Ultra High frequency Semiconductor Electronics of Russian Academy of Sciences Gnatyuk Dmitry, PhD, laboratory supervisor

Institute of Ultra High frequency Semiconductor Electronics of Russian Academy of Sciences Founded in – 3 employees 2013 – 6 employees including 1 student and 1 PhD student Laboratory for research and development of design methods of nanoheterostructural ultra high frequency transistors and microwave monolithic circuits and for microwave measurements.

Design engineer CAD verified models Design Rules Completed project FOUNDRY - technology - production END PRODUCT CONVENTIONAL DESIGN FLOW

Evaluation of standard Microwave Office model Spiral Inductor 0,4 nH blue – measurement purple – standard model green – EM calculation red – EM calculation improved S11S21

Bended microstrip line blue – measurement purple – standard model green – EM calculation red – EM calculation improved Evaluation of standard Microwave Office model S11 S21

Evaluation of standard Microwave Office model Capacitor 0,2 pF blue – measurement purple – standard model green – EM calculation red – EM calculation improved S11 S21

Equivalent circuit based model Measured IV Calculated IV NF, dB Frequency, GHz Measured Calculated Development of Transistor models I drain, mA U gate-drain, V I drain, mA U gate-drain, V

Calculated results Schematic and layout of GaAs pHEMT Ka-band LNA Design of Ka-band LNA (version 1) NF, dB Frequency, GHz VSWR F = 30 – 37,5 GHz Gain > 18 dB NF < 5 dB VSWR in < 2 VSWR out <2

VSWR in VSWR out S21, dB Stability Measured results of Ka-band LNA (version 1)

Corrected layout of Ka-band LNA (version 1) type 1type 2 type 3type 4

Measured results of corrected Ka-band LNA (version 1) type 1 type 2 type 3type 4

NF, dB Frequency, GHz Measured Gain and NF of LNA (types 1 - 3)Measured Gain and NF of LNA (type 4) Comparison of NF of different types of LNA Gain = dB NF = 2,5 - 3,3 dB VSWR in < 2 VSWR out < 2 Ud=2V, Id=60mА Measured Noise figure of corrected Ka-band LNA Gain, NF, dB Frequency, GHz Gain, NF, dB Frequency, GHz

a) Measured and calculated data of LNA type 1 b) Measured and calculated data of LNA type 4 Calculated Measured Frequency, GHz VSWR in VSWR out NF, dB Calculated Measured Frequency, GHz VSWR in VSWR out NF, dB Accuracy of calculations

Inaccurate values of physical magnitude of characteristics of materials at high frequency (permittivity and loss tangent of dielectric, conductivity of metal etc); Error due to 2.5-D simulator calculation method; Design peculiarities that were not taken into account during calculations; Error due to port calibration procedure used in CAD software; Combined effect of stated above reasons. Possible reasons of calculation error

Picture of perfected LNA Schematic of perfected LNA Design of Ka-band LNA (version 2)

Gain = dB NF = 3,0 - 3,7 dB VSWR in < 2 VSWR out < 2 Measured results of perfected Ka-band LNA (version 2) Ud=2,2 V Ug=0,4 V Id=46 mА NF Gain Gain and NF, dB Frequency, GHz VSWR in VSWR out Stability Frequency, GHz VSWR in VSWR out Stability Frequency, GHz

Validity of design method Measured and simulated data for Ka-band LNA (version 2) Suggested design method is proved to be effective for 1 st iteration result. Calculated Measured Frequency, GHz NF, dB VSWR in VSWR out Stability Frequency, GHz Measured Calculated

Design flow diagram

NameBand, GHzGain, dBNF, dB S11, dB S22, dB Power supply Chip size, mm 2 IUHFSE RAS (Version 1) ,5 - 3,3-10 – – -24 2V, 60mА 1,25 х 1,1 IUHFSE RAS (Version 1) , – – -24 2V, 60mА 1,25 х 1,1 IUHFSE RAS (Version 2) 28 – 3618,5 – 223,0 – 3,7-10 – – -22 Ug=0,4V Ud=2V, 60mА 1,15 х 1,0 IUHFSE RAS (Version 2) 25 – 4017 – 222,8 – 4,0-6 – – -22 Ug=0,4V Ud=2V, 60mА 1,15 х 1,0 Mimix XL1000-BD 20 – 4017 – 212 – 4-5 – – -173V, 35 mА2,0х1,0 Avago Technologies AMMC – 4317 – 222,6 – 3,3-10 – – V, 60 mА 1,9 х 0,8 Triquint TGA4507-EPU 28 – 3620 – 252,1 – 2,3-6 – – -23 3V, 60 mА 1,86 х 0,85 Triquint TGA4508-EPU 30 – 4220 – 212,7 – 3,2-6 – – -27 3V, 40 mА 1,7 х 0,8 Hittite HMC-ALH – 4018 – 271,4 – 2,2-10 – – -30 5V, 66 mА 2,1 x 1,37 Hittite HMC – 3619– 232,5 – 3-13 – – -10 3V, 80 mА 2,54 x 0,98 UMS CHA – 4019 – 212 – 2,5-8 – – -25 3,5V, 60 mА 1,72x1,08 Comparison of designed LNA with world’s analogues

Avago Technologies AMMC-6241 NF Gain Gain and NF, dB Frequency, GHz Comparison of designed LNA with world’s analogues Mimix XL1000-BD IUHFSE RAS (version 2) Calculated Measured Frequency, GHz NF, dB

Intel Core2Duo, 2 threads, 3.4 GHz, 4 Gb RAM - ~ minutes AMD Phenom II X6 1090T, 6 threads, 3.2 GHz, 4Gb RAM – 120 sec (ADS 2008) Intel Xeon X5690, 24 threads, 3.47 Ghz, 48 RAM (2 CPU) – 72 sec (ADS 2011) AMD FX9 8150, 8-threads, 3.6 GHz, 12 Gb RAM – 57 sec AMD Phenom II X6 110T, 6-threads, 3.3 Ghz, 8 Gb RAM – 53 sec Intel Xeon E5-2687W, 32-threads, 3.1GHz, 32 Gb RAM (2 CPU) – 33 sec Intel Core i7-3770K, 8-threads, 3.5 GHz, 8 Gb RAM – 25 sec Evolution of calculation time

Conclusion 1. Custom Design flow based on EM calculations of entire layout is developed. 2. Custom model builder tool is created. 3. Effectiveness of developed design approach is proved experimentally. 4. First in Russia LNA MMICs with competitive specifications are successfully designed and manufactured in IUHFSE RAS.

Thank you for your attention