17-May-15Actual problems of microworld physics. Gomel Investigation of radiation hard sensor materials K. Afanaciev on behalf of FCAL collaboration The Xth International School-Seminar The Actual Problems of Microworld Physics Gomel, Belarus 2009

17-May-15Actual problems of microworld physics. Gomel 2009 Very Forward Region of the ILC Detector Interaction point The purpose of the instrumentation of the very forward region is: –Hermeticity: increase the coverage to polar angles > 5mrad –Fast beam diagnostics EM calorimeter with sandwich structure: 30 layers of 1 X 0 3.5mm W and 0.3mm sensor Angular coverage from 5 mrad to 45 mrad Moliére radius R M ≈ 1cm Segmentation between 0.5 and 0.8 x R M BeamCal

17-May-15Actual problems of microworld physics. Gomel 2009 The Challenges for BeamCal e+e - pairs from beamstrahlung are deflected into the BeamCal e + e - per BX => E dep  10 – 20 TeV ~ 5 MGy per year strongly dependent on the beam and magnetic field configuration => radiation hard sensors Detect the signature of single high energetic particles on top of the background. => high dynamic range/linearity e-e- e+e+ Creation of beamstrahlung at the ILC ≈ 1 MGy/y ≈ 5 MGy/y For 1 layer, per cell Bethe-Heitler process

17-May-15Actual problems of microworld physics. Gomel 2009 Irradiation facility Superconducting DArmstadt LINear ACcelerator Technical University of Darmstadt Irradiation up to several MGy using the injector line of the S-DALINAC: 8 and 10MeV electrons, beam currents from 2 to 100 nA corresponding to doserates about 10 to 600 kGy/h

17-May-15Actual problems of microworld physics. Gomel Investigated materials  Gallium arsenide (GaAs),  Polycrystalline CVD (chemical vapour deposition) Diamond (pCVD)  Single crystall CVD Diamond (sCVD)  Silicon (common detector-grade Si for comparison) GaAs SiDiamond Density5.32 g/cm  Pair creation E4.3 eV/pair  Band gap1.42 eV  Electron mobility8500 cm 2 /Vs Hole mobility400 cm 2 /Vs  Dielectric const  Radiation length2.3 cm Ave. E dep /100  m (by 10 MeV e - ) 69.7 keV Ave. pairs/100  m Structurep-n or insul. p-n insul.

17-May-15Actual problems of microworld physics. Gomel 2009 Methodology. Irradiation collimator (I Coll ) sensor box (I Dia, T Dia, HV) Irradiation under bias voltage Monitoring of beam and sample currents, sample temperature exit window of beam line Faraday cup (I FC, T FC )

17-May-15Actual problems of microworld physics. Gomel 2009 Methodology. CCD Setup typical spectrum of an E6 sensor Sr90 source Preamplifier Sensor box Trigger box & Gate PA discr delay ADC Sr 90 sample Scint. PM1 PM2

17-May-15Actual problems of microworld physics. Gomel 2009 pCVD Diamond Detector pCVD diamonds are an interesting material: –radiation hardness –nice properties like: high mobility, low ε R = 5.7, thermal conductivity –availability on wafer scale –Solid-state ionisation chamber (no p- n junction) Samples from two manufacturers were investigated: –Element Six TM (ex-DeBeers) –Fraunhofer Institute for Applied Solid-State Physics – IAF 1 x 1 cm μm thick (typical thickness 300μm) Ti(/Pt)/Au metallization ( courtesy of IAF)

17-May-15Actual problems of microworld physics. Gomel 2009 After absorbing 7MGy: CVD diamonds still operational. pCVD Diamond. Irradiation A number of samples from two producers were irradiated Typical behaviour: Increase in CCD at low dose => pumping - i.e. filling of the traps Then gradual decrease of efficiency with dose %CCD of the pumped value vs dose

17-May-15Actual problems of microworld physics. Gomel 2009 ~ -80% Signal decreased by  80 % after absorbed dose of about 7 MGy But signal is still visible. Slight increase in current, but still in pA range pCVD Diamond. Irradiation results E6_4 sample from Element 6, 500 μm

17-May-15Actual problems of microworld physics. Gomel 2009 pCVD Diamond. Irradiation results Signal from sample decreases with time after irradiation further decrease after ‘purging’ trapping levels with UV light Signal increases back after irradiation with small dose - ‘pumping’ FAP5 sample from IAF, 500 μm

17-May-15Actual problems of microworld physics. Gomel 2009 sCVD Diamond detector Single crystal CVD (chemical vapour deposition) diamond CVD growth on top diamond substrate + Low defect content, very good detector properties - Small area (up to 5x5 mm), very high price Sample produced by Element Six 5x5 mm, 320μm thickness initial charge collection efficiency about 100% (CCD 320μm)

17-May-15Actual problems of microworld physics. Gomel 2009 sCVD Diamond. Irradiation results Irradiation to 10 MGy CCE dropped to 10% of the initial value No visible annealing in 18 month No significant increase in the dark current after the irradiation (still in pA range)

17-May-15Actual problems of microworld physics. Gomel 2009 sCVD Diamond. Switched HV Charge trapping leads to the decrease in the efficiency due to nonuniform charge distribution => switched HV supply => more uniform charge distribution CCD converge to about 1.5x higher and no time dependence

17-May-15Actual problems of microworld physics. Gomel 2009 Diamond Detector. Linearity Testbeam at CERN Proton Synchrotron. 4 GeV hadrons Response to 10 ns spills of variable intensity linear response for particle fluxes from 2x10 4 MIP/cm 2 up to 3x10 6 MIP/cm 2

17-May-15Actual problems of microworld physics. Gomel 2009 GaAs Detector Supplied by FCAL group at JINR Produced by Siberian Institute of Technology, Tomsk Sample is semi-insulating GaAs doped by Sn (shallow donor) and compensated by Cr (deep acceptor). This is done to compensate electron trapping centers EL2+ and provide i-type conductivity. Sample works as a solid state ionisation chamber Structure provided by metallisation (similar to diamond) 500  m thick detector is divided into 87 5x5 mm pads and mounted on a 0.5mm PCB with fanout Metallisation is V (30 nm) + Au (1  m) Same material - simple 4 pad structure

17-May-15Actual problems of microworld physics. Gomel 2009 GaAs. Signal Clear separation of peaks from Sr 90 source S8 pad4 ring 4 S8 pad4 ring 6 Quite homogeneous response over different pads Saturation of about 200V bias Collection efficiency  60%

17-May-15Actual problems of microworld physics. Gomel 2009 GaAs. Irradiation results Samples 7&8, pad4, 200V Preliminary Sample 7 Sample 8 Results: CCE dropped to about 6% from 60% (by ~ 90%) after 1.5 MGy this corresponds to signal size of about 2000 e -

17-May-15Actual problems of microworld physics. Gomel 2009 GaAs. Irradiation results Dark current increased  2 times (from 0.4 to 1  200V) Signal is still visible for an absorbed dose of about 1.5 MGy

17-May-15Actual problems of microworld physics. Gomel 2009 GaAs. Second testbeam A set of GaAs samples with different doping concentrations was irradiated cm -3 Batch # Shallow donor type Concentration, cm -3 1 Te (1-1.5)* Te (5-6)* Sn (1-3)*10 16 Thicknesses 150 – 200 µm Metallization: V (30 nm) + Au (1 µm) from both sides

17-May-15Actual problems of microworld physics. Gomel 2009 GaAs. Irradiation results A set of GaAs samples with different doping concentrations was irradiated Batch with lowest shallow donor concentration shows best radiation hardness Batch % drop in 1.2 MGy

17-May-15Actual problems of microworld physics. Gomel 2009 Silicon. Comparison For comparison purposes two silicon detectors were irradiated (detector grade by Micron) Degradation of signal starts at doses  40 kGy At higher doses dark current and noise level increases dramatically (from  10 nA to  A range). No clear signal visible

17-May-15Actual problems of microworld physics. Gomel 2009 Conclusion At the moment CVD diamond and GaAs prove to be sufficiently radiation hard for application in BeamCal Inconsistent results from different diamond samples could be a problem Pumping-depumping behavior could be a problem for calorimetry For Electromagnetic irradiation: pCVD Diamond operational up to 7 MGy sCVD Diamond operational up to 10 MGy Semiinsulating GaAs operational up to 1.5 MGy Diamond detector have linear response for particle fluxes from 2x10 4 MIP/cm 2 up to 3x10 6 MIP/cm 2

17-May-15Actual problems of microworld physics. Gomel 2009 Future work A new testbeam is planned for this year New GaAs samples are being produced by JINR FCAL group We are going to test samples with different donor and acceptor concentrations. More tests are needed to understand the possible application of switched HV to improve the diamond detector efficiency Possible new materials? Thank you for your attention

17-May-15Actual problems of microworld physics. Gomel 2009 Backup slides

17-May-15Actual problems of microworld physics. Gomel 2009 Irradiation facility