First results from the HEPAPS4 Active Pixel Sensor

Slides:



Advertisements
Similar presentations
STAR Pixel Detector Phase-1 testing. 22 Testing interrupted LBNL-IPHC 06/ LG Lena Weronika Szelezniak born on May 30, 2009 at 10:04 am weighing.
Advertisements

G. RizzoSuperB WorkShop – 17 November R&D on silicon pixels and strips Giuliana Rizzo for the Pisa BaBar Group SuperB WorkShop Frascati-17 November.
1 Research & Development on SOI Pixel Detector H. Niemiec, T. Klatka, M. Koziel, W. Kucewicz, S. Kuta, W. Machowski, M. Sapor, M. Szelezniak AGH – University.
M. Szelezniak1PXL Sensor and RDO review – 06/23/2010 STAR PXL Sensors Overview.
Digital Integrated Circuits© Prentice Hall 1995 Devices Jan M. Rabaey The Devices.
Development of an Active Pixel Sensor Vertex Detector H. Matis, F. Bieser, G. Rai, F. Retiere, S. Wurzel, H. Wieman, E. Yamamato, LBNL S. Kleinfelder,
Cameras for scientific experiments A brave attempt to give an overview of the different types and their pros & cons Grouptalk Optical Sciences, may
CHARGE COUPLING TRUE CDS PIXEL PROCESSING True CDS CMOS pixel noise data 2.8 e- CMOS photon transfer.
Jaap Velthuis, University of Bristol SPiDeR SPiDeR (Silicon Pixel Detector Research) at EUDET Telescope Sensor overview with lab results –TPAC –FORTIS.
Standalone VeloPix Simulation Jianchun Wang 4/30/10.
Lecture #26 Gate delays, MOS logic
Status of Oxford Setup Matthew Chalk, Erik Devetak, Johan Fopma, Brian Hawes, Ben Jeffery, Nikhil Kundu, Andrei Nomerotski University of Oxford ( 18 August.
EE4800 CMOS Digital IC Design & Analysis
1D or 2D array of photosensors can record optical images projected onto it by lens system. Individual photosensor in an imaging array is called pixel.
Charge-Coupled Device (CCD)
CMOS image sensors Presenter: Alireza eyvazzadeh.
Storey: Electrical & Electronic Systems © Pearson Education Limited 2004 OHT 20.1 Field-Effect Transistors  Introduction  An Overview of Field-Effect.
SPiDeR  First beam test results of the FORTIS sensor FORTIS 4T MAPS Deep PWell Testbeam results CHERWELL Summary J.J. Velthuis.
Progress Towards Active Pixel Sensor Detectors for Solar Orbiter Dr Nick Waltham Head of Imaging Systems Division, Space Science & Technology Department,
Development of Readout ASIC for FPCCD Vertex Detector 01 October 2009 Kennosuke.Itagaki Tohoku University.
Ch 10 MOSFETs and MOS Digital Circuits
Performance test of STS demonstrators Anton Lymanets 15 th CBM collaboration meeting, April 12 th, 2010.
Jan M. Rabaey The Devices Digital Integrated Circuits© Prentice Hall 1995 Introduction.
First Results from Cherwell, a CMOS sensor for Particle Physics By James Mylroie-Smith
Monolithic Pixels R&D at LBNL Devis Contarato Lawrence Berkeley National Laboratory International Linear Collider Workshop, LCWS 2007 DESY Hamburg, May.
SPiDeR  SPIDER DECAL SPIDER Digital calorimetry TPAC –Deep Pwell DECAL Future beam tests Wishlist J.J. Velthuis for the.
CCD Detectors CCD=“charge coupled device” Readout method:
Active Pixel Sensors for Direct Detection of Soft X-rays Andrew Blue* a, R. Bates a, A. Clark c, S. Dhesi b, D. Maneuski a, J. Marchal b, P. Steadman b,
07 October 2004 Hayet KEBBATI -1- Data Flow Reduction and Signal Sparsification in MAPS Hayet KEBBATI (GSI/IReS)
1 Read out & data analysis of the MVD demonstrator S. Amar-Youcef, M. Deveaux, I. Fröhlich, J. Michel, C. Müntz, C. Schrader, S. Seddiki, T. Tischler,
VI th INTERNATIONAL MEETING ON FRONT END ELECTRONICS, Perugia, Italy A. Dorokhov, IPHC, Strasbourg, France 1 NMOS-based high gain amplifier for MAPS Andrei.
10/26/20151 Observational Astrophysics I Astronomical detectors Kitchin pp
Fully depleted MAPS: Pegasus and MIMOSA 33 Maciej Kachel, Wojciech Duliński PICSEL group, IPHC Strasbourg 1 For low energy X-ray applications.
LEPSI ir e s MIMOSA 13 Minimum Ionising particle Metal Oxyde Semi-conductor Active pixel sensor GSI Meeting, Darmstadt Sébastien HEINI 10/03/2005.
CEA DSM Irfu 20 th october 2008 EuDet Annual Meeting Marie GELIN on behalf of IRFU – Saclay and IPHC - Strasbourg Zero Suppressed Digital Chip sensor for.
First tests of CHERWELL, a Monolithic Active Pixel Sensor. A CMOS Image Sensor (CIS) using 180 nm technology James Mylroie-Smith Queen Mary, University.
1 Chapter 5. Metal Oxide Silicon Field-Effect Transistors (MOSFETs)
Observational Astrophysics I
1 Radiation Hardness of Monolithic Active Pixel Sensors Dennis Doering, Goethe-University Frankfurt am Main on behalf of the CBM-MVD-Collaboration Outline.
Technology Overview or Challenges of Future High Energy Particle Detection Tomasz Hemperek
UK Activities on pixels. Adrian Bevan 1, Jamie Crooks 2, Andrew Lintern 2, Andy Nichols 2, Marcel Stanitzki 2, Renato Turchetta 2, Fergus Wilson 2. 1 Queen.
26 Apr 2009Paul Dauncey1 Digital ECAL: Lecture 2 Paul Dauncey Imperial College London.
PIXEL Slow Simulation Xin Li 3/16/2008. CMOS Active Pixel Sensor (APS) Epitaxy is a kind of interface between a thin film and a substrate. The term epitaxy.
Radiation hardness of Monolithic Active Pixel Sensors (MAPS)
Rutherford Appleton Laboratory Particle Physics Department G. Villani CALICE MAPS Siena October th Topical Seminar on Innovative Particle and.
A. Dorokhov, IPHC, Strasbourg, France 1 Description of pixel designs in Mimosa22 Andrei Dorokhov Institut Pluridisciplinaire Hubert Curien (IPHC) Strasbourg,
W. Kucewicz a, A. A.Bulgheroni b, M. Caccia b, P. Grabiec c, J. Marczewski c, H.Niemiec a a AGH-Univ. of Science and Technology, Al. Mickiewicza 30,
Custom mechanical sensor support (left and below) allows up to six sensors to be stacked at precise positions relative to each other in beam The e+e- international.
CMOS Sensors WP1-3 PPRP meeting 29 Oct 2008, Armagh.
-1-CERN (11/24/2010)P. Valerio Noise performances of MAPS and Hybrid Detector technology Pierpaolo Valerio.
Photo-detection EDIT EDIT 2011Single photon counting measurements with an HPD – T. GysSlide 1 Single photon counting measurements with a hybrid photon.
Progress with GaAs Pixel Detectors K.M.Smith University of Glasgow Acknowledgements: RD8 & RD19 (CERN Detector R.&D. collaboration) XIMAGE (Aixtron, I.M.C.,
Monolithic and Vertically Integrated Pixel Detectors, CERN, 25 th November 2008 CMOS Monolithic Active Pixel Sensors R. Turchetta CMOS Sensor Design Group.
Cameras For Microscopy Ryan McGorty 26 March 2013.
Medipix3 chip, downscaled feature sizes, noise and timing resolution of the front-end Rafael Ballabriga 17 June 2010.
Highlights from the VTX session Marc Winter & Massimo Caccia R&D reports: – DEPFET (M. Trimpl) – CCD (S. Hillert) – UK-CMOS (J.Velthuis) – Continental-CMOS.
Comparison of a CCD and the Vanilla CMOS APS for Soft X-ray Diffraction Graeme Stewart a, R. Bates a, A. Blue a, A. Clark c, S. Dhesi b, D. Maneuski a,
Irfu saclay CMOS Pixel Sensor Development: A Fast Readout Architecture with Integrated Zero Suppression Christine HU-GUO on behalf of the IRFU and IPHC.
Presented by Renato Turchetta CCLRC - RAL 7 th International Conference on Position Sensitive Detectors – PSD7 Liverpool (UK), September 2005 R&D.
Performance of 1600-pixel MPPC for the GLD Calorimeter Readout Jan. 30(Tue.) Korea-Japan Joint Shinshu Univ. Takashi Maeda ( Univ. of Tsukuba)
Advanced Monolithic Active Pixel Sensors with full CMOS capability for tracking, vertexing and calorimetry Marcel Stanitzki STFC-Rutherford Appleton Laboratory.
SPiDeR  Status of SPIDER Status/Funding Sensor overview with first results –TPAC –FORTIS –CHERWELL Beam test 09 Future.
Nonvolatile memories:
for the SPiDeR collaboration (slides from M. Stanitski, Pixel2010)
Design and Characterization of a Novel, Radiation-Resistant Active Pixel Sensor in a Standard 0.25 m CMOS Technology P.P. Allport, G. Casse, A. Evans,
First Testbeam results
SCIENTIFIC CMOS PIXELS
TCAD Simulation and test setup For CMOS Pixel Sensor based on a 0
IN5350 – CMOS Image Sensor Design
Presentation transcript:

First results from the HEPAPS4 Active Pixel Sensor Presented at the 10th International Conference on Instrumentation for Colliding Beam Physics February 28 to March 5 2008 Budker Institute of Nuclear Physics, Novosibirsk, Russia

Outline of the talk Active Pixel Sensors – an introduction The HEPAPS4 sensor Basic characterisation Noise components and reset behaviour Photon Transfer Curve Linearity Dark current First test beam plots (very preliminary) Summary February 29, 2008 Lars Eklund, INSTR08

Active Pixel Sensors – Introduction Silicon sensor technology based on industry standard CMOS processes Monolithic: Sensing volume and amplification implemented in the same silicon substrate Similar ‘use case’ as CCDs Photonic applications: Biological/medical applications, HPDs, digital cameras, … Envisaged HEP applications Linear collider vertex detector (~109 channels) Linear collider calorimeter (Si/W, ~1012 channels) February 29, 2008 Lars Eklund, INSTR08

Active Pixel Sensors – Principle of Operation Simplest design of APS: 3MOS pixel Photo diode Reset MOS (switch) Select MOS (switch) Source follower MOS Functional description Photo diode: n-well in the p-type epilayer of the silicon Charge collection: e-h pairs from ionising radiation Diffusion of charge in epi-layer Collected by the diode by the built-in field in the pn-junction In-pixel circuitry built in p-well. Collected charge changes the potential on the source follower gate VG = QPD/CPD Gate voltage changes the transconductance Pixel selected by the select MOS Output voltage = VDD-gds*IBias VDD VRST GND Pixel output Photo diode February 29, 2008 Lars Eklund, INSTR08

Active Pixel Sensor - Cartoon Photo diode (n-well) pn-junction with p-epi 1-several diodes of varying sizes in different designs. Epi-layer (5-25 μm) Active volume of the device Expected MIP: 400-2000 e- pixel size 10-100 μm In-pixel circuitry NMOS transistors p-well For in-pixel circuitry Silicon bulk (10-700 μm) Can be thinned as much as mechanical stability allows * Typical values found in different designs February 29, 2008 Lars Eklund, INSTR08

Cartoon – array of active pixels February 29, 2008 Lars Eklund, INSTR08

(non-judgemental) pros and cons Only uses the epi-layer as active volume Quite small signal (compared to hybrid pixel devices) Can be thinned to minimise material But S/N is what counts Intrinsically very low noise Fight other noise components Radiation hardness Relies on diffusion for charge collection (no bias voltage) No charge shifting (as in e.g. CCDs) Compared to LHC style sensors Relatively slow read-out speed Very low power consumption (saves services!) Cost Si sensors relatively expensive per m2 Standard CMOS process Saves integration costs February 29, 2008 Lars Eklund, INSTR08

The HEPAPS4 – large area sensor for HEP applications Fourth in series designed at RAL Selected most promising design in HEPAPS2 Basic parameters 15x15 μm2 pixel size 384x1024 pixels 20 μm epi-layer 1 MIP = 1600 e- spread over several pixels Three different design variants: Design Diode size From simulations gain noise 2 diodes in parallel 3x3 μm2 11 μV/e- 45 e- 4 diodes in parallel 1.7x1.7 μm2 10 μV/e- 47 e- Single diode (enclosed geometry transistors) 16 μV/e- 37e- Results presented here are from the single diode design February 29, 2008 Lars Eklund, INSTR08

HEPAPS4 operating principle 3MOS APS pixel as described previously Loop over all rows, select one at a time. Sample the signal on to a capacitor for each column Loop over columns, read out the value through four independent output drivers Reset the row Rolling shutter: Continuously cycle through pixels to read-out and reset February 29, 2008 Lars Eklund, INSTR08

Noise components Reset noise Fixed Pattern Noise As described on next slide Can be removed by Correlated Double Sampling Sample the reset value before charge collection Can be done in H/W or (partially) offline Fixed Pattern Noise Gain Variation Pedestal variation 280 ADC or ~1400e- for HEPAPS4 Removed by subtracting: Pedestal frame from dark measurement Two adjacent frames Dark Current Leakage current in the photo diode Depends on the Average offset = Ileak Shot Noise = sqrt(Ileak) Common mode noise Can be partially subtracted Read noise The fundamental noise of the chip February 29, 2008 Lars Eklund, INSTR08

Pixel Reset Behaviour VRST VDD GND Pixels are reset by asserting a signal on the Reset Switch The charge collecting node is set to the reset voltage VRST Soft Reset: VRST = VDD Less reset noise Hard Reset: VRST < VDD Less image lag Decreases dynamic range Plot shows HEPAPS4 reset from fully saturated with soft reset operation (VRST=VDD). February 29, 2008 Lars Eklund, INSTR08

HEPAPS4 as imaging sensor APS sensor also used in digital cameras HEPAPS4 becomes a B/W 400 kpix camera Plots show visually the effects of pedestal subtraction February 29, 2008 Lars Eklund, INSTR08

Photon Transfer Curve (PTC) – Basic Principle Shine light on the sensor and increase the illumination gradually Conceptual PTC curve Plot signal variance vs. mean Read noise will dominate for low intensities, but: mean [ADC] variance [ADC2] saturation photon noise dominated read noise dominated slope = Gain [ADC/e-] Mean: Variance: # of photons per pixel is a Poisson process Hence in the region dominated by photon noise February 29, 2008 Lars Eklund, INSTR08

Photon Transfer Curve - Results Read out a region of 200x200 pixels Subtract pedestal frame Calculate mean signal per pixel Subtract two adjacent frames: Removes fixed pattern noise Calculate variance per pixel Assume constant gain 1000-5000 ADC Slope gives gain = 5.1 e-/ADC Noise floor not shown, since it is dominated by systems noise Saturation starts after 6000 ADC Average variance vs. average mean for 40000 pixels Expected value from design: 7.8 e-/ADC February 29, 2008 Lars Eklund, INSTR08

Photon Transfer Curve – Gain Distributions Same analysis for 40 000 pixels 800 frames to calculate mean and variance Fit slope for each pixel Gain = 5.1 Gain RMS = 0.51 # pixels with gain: < 3 e-/ADC: 41pix > 8 e-/ADC: 90 pix February 29, 2008 Lars Eklund, INSTR08

Linearity Non-linearity arises from Change in sense node capacitance when charged Non-linearity of source follower Measurement method: Constant, low illumination Continuous acquisition of frames No reset between frames Relative gain is the derivative of this curve, normalised to the gain at 0 ADC Relative gain > 90% 0-1640 ADC 0-8360 e- Relative gain > 80% 0-3780 ADC 0-19300 e- February 29, 2008 Lars Eklund, INSTR08

Dark Current Dark current is leakage current in the photo diode Method: Readout two consecutive frames without reset between the frames Subtract the two frames to remove pedestal and fixed pattern noise Vary the integration time Linear fit to the curve Slope 530 ADC/s = 2700 e-/s Pixel size 15x15 μm2 Idark = 0.2 nA/cm2 February 29, 2008 Lars Eklund, INSTR08

First Test Beam Plots Test beam at DESY: 6GeV electrons Combined with ISIS pixel sensor Configuration of sensor slightly different from photonic measurements in the lab Analysis in progress Two ‘muse-bouche’ plots: Hit map: accumulation of reconstructed clusters Landau: Cluster charge in ADC values February 29, 2008 Lars Eklund, INSTR08

Summary Active Pixel Sensors are an attractive technology for certain applications in HEP The principle of operation HEPAPS4 – a large area APS designed for HEP applications First results from the characterisation: Gain 5.1 e-/ADC with an RMS of 0.5 e-/ADC over 40k pixels 90% of gain up to 8400 e- 80% of gain up to 19300 e- Dark current 2700 e-/s per pixel Two preliminary plots from the beam test February 29, 2008 Lars Eklund, INSTR08