Low Power Memory. Quick Start Training Agenda What constitutes low power memory Variations & vendors of low power memory How to interface using CoolRunner-II.

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Presentation transcript:

Low Power Memory

Quick Start Training Agenda What constitutes low power memory Variations & vendors of low power memory How to interface using CoolRunner-II

Quick Start Training What is Low Power Memory Devices feature additional power saving options: – Advanced self refresh modes – Deep power down mode – Low voltage power supply (1.8V, 2.5V, 3.3V) – Low standby current – Automatic power down Advanced architecture and memory cell structure Advanced packaging options

Quick Start Training Advanced Architecture Improved cell structure – UtRAM: uni-transistor memory cell structure Prefetch architecture creates high speed devices

Quick Start Training TCSR Temperature Compensated Self Refresh Ambient temperature adjusts refresh rate – Capacitor loses charge quicker at high temperature – Decrease refresh rate at lower temperatures Minimized standby current during standby Selectable for: 15°C, 45°C, 70°C, 85°C Requires an external temperature sensor

Quick Start Training PASR Partial Array Self Refresh Specify which banks are enabled

Quick Start Training DPD Deep Power Down Maximum power reduction Memory data is not retained Acts as “soft switch-off”

Quick Start Training Available Devices Infineon MobileRAM (synchronous lower power DRAM) Cypress MoBL (mobile static RAM) Samsung – UtRAM – Low power SRAM – Mobile SDRAM Micron – Mobile SDRAM – Cellular RAM

Quick Start Training Mobile SDRAM Features Fully synchronous Internal pipeline architecture Programmable burst length (1, 2, 4, 8, page) TCSR PASR power saving self-refresh DPD Up to 70% power savings over standard SDRAM devices in self-refresh mode

Quick Start Training Mobile SDRAM Commands NOP (Deselect SDRAM device) ACTIVE (Opens row in specified bank for access) READ (Select bank and column, and start READ burst) WRITE (Select bank and column, and start WRITE burst) DEEP POWER DOWN (Maximum power savings, data is not retained) PRECHARGE (Deactivates open row in specified bank or all banks) AUTO REFRESH or SELF REFRESH (Retains data in SDRAM) LOAD MODE REGISTER (Defines operating mode of SDRAM)

Quick Start Training Timing Specifications For example, t RCD = 20 ns, with 125 MHz clock = 3 clock cycles Parameter t RCD = delay controller must wait between ACTIVE and a READ/WRITE command

Quick Start Training Read Command

Quick Start Training Write Command

Quick Start Training Deep Power Down Mode Upon exit DPD mode: NOP for 200 us Precharge all banks Issue 8 Auto Refresh commands Initialize Mode Register & Extended Mode Register

Quick Start Training Why CoolRunner-II Low standby current < 100 uA Easy system integration with memory devices Perfect target device for portable and handheld applications System Bus Mobile SDRAM

Quick Start Training CPLD Design

Quick Start Training State Machine Components CAS latency 2-bit counter Write burst 4-bit counter Read burst 4-bit counter (implements burst up to 8) Mode Register – CAS, burst length

Quick Start Training State Machine

Quick Start Training Conclusion Complete downloadable VHDL reference design: XAPP394 CoolRunner-II is the perfect target device for interfacing to low power memory devices – CoolRunner-II allows seamless system integration – CoolRunner-II is the ideal low power memory controller