Department of Electronics Semiconductor Devices 24 Atsufumi Hirohata 11:00 Thursday, 27/November/2014 (P/T 005)

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Presentation transcript:

Department of Electronics Semiconductor Devices 24 Atsufumi Hirohata 11:00 Thursday, 27/November/2014 (P/T 005)

Exercise 3 Calculate the built-in potential of an abrupt p-n junction diode which is made from Silicon and has the following properties: p-region: doping density of N A = 2  m -3 n-region: doping density of N D = 1  m -3 intrinsic concentration of electrons: n i = 1.2  m -3 and assume k B T / q = 25 mV.

Answer to Exercise 3 The built-in potential is defined as By substituting the given values into the above relationship,

24 Bias Application Forward bias Reverse bias Current rectification Junction breakdown

p-n Diode * A junction made by attaching p- and n-doped semiconductors : Widely used to insulate transistors. Common circuit to convert ac to dc in a battery charger.

Band Diagram * Without a bias voltage :

Band Diagram under a Forward Bias * Forward bias application : **

Forward Bias Application Energy, electric field and charge density : *

Forward Bias Region Narrower depletion layer : *

Band Diagram under a Reverse Bias Reverse bias application : * **

Reverse Bias Region Wider depletion layer : *

Ideal and Real p-n Diodes Current-voltage characteristics : *

p-n Junction Interface By connecting p- and n-type semiconductors, * S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 2006).

Rectification in a p-n Junction Under an electrical field E, Current rectification : ** H. Ibach and H. Lüth, Solid-State Physics (Springer, Berlin, 2003). * S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 2006);

Junction Breakdown Electron avalanche : ** * Electron avalanche Hole avalanche

Junction Breakdown Zener diode : Electron tunnelling ** * ***

Bipolar Transistors npn junction : *

Bipolar Transistors npn junction : * pnp junction : Recombination e h e h

Exercise 4 Calculate the depletion layer width of an abrupt p-n junction diode which is made from Silicon and has the following properties: p-region: doping density of N A = 2  m -3 n-region: doping density of N D = 1  m -3 permittivity:  =    0 = 12.0   F/m and q = 1.6  C.