A Leakage Current Replica Keeper for Dynamic Circuits  Based on the work presented in “A leakage Current Replica Keeper for Dynamic Circuits” by: Yolin.

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Presentation transcript:

A Leakage Current Replica Keeper for Dynamic Circuits  Based on the work presented in “A leakage Current Replica Keeper for Dynamic Circuits” by: Yolin lih, Nestoras Tzartzanis, William W. Walker Fujitsu Laboratories of America, Sunnyvale, CA presented in ISSCC 2006/Session 24/High performance Digital Circuits/24.4  For class presentation in Advanced VLSI Course, Tehran University, Fall 2006 By: Bardia Bozorgzadeh Professor: Dr. S. M. Fakhraie

Outline  Introduction  Conventional keepers and their problems  Existing solutions and their problems  Leakage current replica keeper proposal  Application to a mutli-port SRAM  Measurements  Conclusion  References

Introduction  Dynamic circuits are indispensable for constructing wide high- speed OR and AND-OR gates in CMOS.  Faster and more compact than conventional logic gates.  Required to build memories.  These gates need keepers to maintain a high state during evaluation.

Conventional Keeper  Conventional keeper is sized for worst-case (sPfN process corner) leakage current.[1]  Also should be week enough so that a single NFET leg can pull the dynamic node quickly in fPsN process corner.[1]  Upper limit on the number of legs decreases as processes are scaled.[1]

Delay for conventional keeper  Keeper is sized for a max voltage drop of 0.1V DD on node DN with DC noise of 0.15V DD applied to 1/4 of legs in sPfN corner.[1]  Gate fails to switch for more than 24 legs.[1]  Domino gates with conventional keeper will no longer be designable.[1]

Existing solutions  Conditional keeper overhead ≥ 5 FETs must estimate delay. (could be large)[1]  Adaptive keeper over head ≥ 4 FETs  None of these track the two critical process corners fPsN and sPfN. [1]

Leakage Current Replica (LCR) Keeper  Subthreshold is tracked using a replica circuit, and mirrored into the dynamic gate keeper.  The replica current mirror can be shared with all dynamic gates  1 FET overhead/gate  Tracks all process corners as well as temperature and V DD.[1]  Only random on-die variations are not tracked, but after margining for these variations, LCR still has an advantage.[1]

Sizing LCR Keeper  W nprl = sf.∑W ni  With sf=1 will hold DN only to same voltage as KPR.  V(KPR) design critical[1]: too low : poor replica too high : ΔV tp sensitive  sf is selected to be approximately 10, then p1 is driven to triode region to keep DN close to V DD.  Choose long L for p1 and p3 to reduce V t variations.[1]  The size of p2 isn’t critical as long as it is bigger than p1. [1]

Selecting a safety factor

Delay Comparison  LCR Keeper is usable for up to 32 legs.  sPfN process corner presents the worst-case delay for more than 20 legs due to replication of the leakage current by the keeper.[1]  With 16 to 24 legs LCR is 25 to 40% faster than conventional keeper. [1]

Application to multi-port SRAM  1024 word × 72 bit  3 write / 4 read  3 stage domino read path  Fabricated in 90nm, 1.2V CMOS  1.34mm × 1.31mm  sf 6 to 10 The 1024 × 72 3W/4R SRAM block diagram [1]

LCR SRAM single-ended 3-stage domino read path

Cont’d  Previous SRAMs in this technology are desinged using high-V t NFETs in the dynamic gates but using LCR keeper allowed us to switch to low-V t NFETs. [1]  Since all read paths are identical only one current mirror is used for the entire SRAM.[1]  2 × minimum length channel is used for p1 and p3 to increase V tp and reduce its variations.

Simulated access time comparison  The delay from clk to RWD is identical for both circuits because they use identical static logic.[1]

Conclusion  A leakage current replica keeper is proposed to improve scaling of dynamic gates.  Overhead is 1-FET per gate plus a portion of the replica circuit.  For equal noise margins, either: more legs are possible; gate is faster with the same number of gates.  A fairly large safety factor is needed to account for random on- die process variation especially FET V t variation.

References [1] Yolin lih, Nestoras Tzartzanis, William W. Walker. “A leakage Current Replica Keeper for Dynamic Circuits” ISSCC 2006/Session 24/High performance Digital Circuits/24.4 [2] N.H.E. Weste and David Harris, “CMOS VLSI Design. A Circuit and System perspective”. Third Edition, Boston: Addison-Wesley, [3] A.Alvandpour et al., “A Conditional Technique for Sub-0.13µm wide Dynamic Gates,” Symp. VLSI Circuits, pp , 2001 [4] C. R. Gautheir et al., US Patents #6,914,452 and #6,894,528, 2002.

Thank You