Phase Transitions in VO2 – Nikita Butakov

Slides:



Advertisements
Similar presentations
Semiconductors Physics 355 computers  air bags  Palm pilots  cell phones  pagers  DVD players  TV remotes  satellites  fiber networks  switches.
Advertisements

NMR Studies of Metal-Insulator Transitions Leo Lamontagne MATRL286K December 10 th, 2014.
The “normal” state of layered dichalcogenides Arghya Taraphder Indian Institute of Technology Kharagpur Department of Physics and Centre for Theoretical.
Budapest University of Technology and Economics Department of Electron Devices Microelectronics, BSc course Basic semiconductor physics.
Electrical Engineering 2 Lecture 4 Microelectronics 2 Dr. Peter Ewen
Linear and Pump-Probe applications of THz Spectroscopy: The case of Elettra, Bessy-II, and SPARC S. Lupi Dipartimento di Fisica, INFN-University of Rome.
Materials 286K Special Topics in Inorganic Materials: Non-metal to Metal Transitions 1.Purpose of this course 2.Counting electrons.
Influence of Acceptor Structure on Barriers to Charge Separation in Organic Photovoltaic Materials Ryan D. Pensack†, Changhe Guo‡, Kiarash Vakhshouri‡,
Coulomb Interaction in quantum structures - Effects of
ISSUES TO ADDRESS... How are electrical conductance and resistance characterized ? 1 What are the physical phenomena that distinguish conductors, semiconductors,
Semiconductor Physics - 1Copyright © by John Wiley & Sons 2003 Review of Basic Semiconductor Physics.
The electronic structures of 2D atomically uniform thin film S.- J. Tang, T. Miller, and T.-C. Chiang Department of Physics, University of Illinois at.
P461 - Semiconductors1 Semiconductors Filled valence band but small gap (~1 eV) to an empty (at T=0) conduction band look at density of states D and distribution.
Rinat Ofer Supervisor: Amit Keren. Outline Motivation. Magnetic resonance for spin 3/2 nuclei. The YBCO compound. Three experimental methods and their.
Optics on Graphene. Gate-Variable Optical Transitions in Graphene Feng Wang, Yuanbo Zhang, Chuanshan Tian, Caglar Girit, Alex Zettl, Michael Crommie,
LCLS Studies of Laser Initiated Dynamics Jorgen Larsson, David Reis, Thomas Tschentscher, and Kelly Gaffney provided LUSI management with preliminary Specifications.
Semiconductors n D*n If T>0
Quick and Dirty Introduction to Mott Insulators
Ideal Diode Model.
Superconductivity Characterized by- critical temperature T c - sudden loss of electrical resistance - expulsion of magnetic fields (Meissner Effect) Type.
ULTRAFAST DYNAMICAL RESPONSE OF THE PROTOTYPE MOTT COMPOUND V 2 O 3 B. Mansart 1, D. Boschetto 2 and M. Marsi 1 1Laboratoire de Physique des Solides, UMR.
Lecture 2 OUTLINE Semiconductor Fundamentals (cont’d) – Energy band model – Band gap energy – Density of states – Doping Reading: Pierret , 3.1.5;
Electrochemistry for Engineers LECTURE 11 Lecturer: Dr. Brian Rosen Office: 128 Wolfson Office Hours: Sun 16:00.
SEMICONDUCTOR PHYSICS. BAND THEORY OF SOLIDS  Ge and Si are pure semiconductors  Electronic configuration of Si is  1S 2, 2S 2, 2P 6, 3S 2, 3P 2.
Lecture 2 OUTLINE Important quantities Semiconductor Fundamentals (cont’d) – Energy band model – Band gap energy – Density of states – Doping Reading:
SEMICONDUCTORS Semiconductors Semiconductor devices
Ultrafast processes in Solids
Effects of Strain on Vanadium Dioxide Nanobeams Eli Bingham University of North Carolina UW REU 2012 Advisor: David Cobden.
ITOH Lab. Hiroaki SAWADA
2011/12/14 2nd term M1 colloquium Creation of huge metal-insulator domain and its electrical conduction property in VO 2 thin film on TiO 2 (001) substrate.
Techniques for determination of deep level trap parameters in irradiated silicon detectors AUTHOR: Irena Dolenc ADVISOR: prof. dr. Vladimir Cindro.
Tzveta Apostolova Institute for Nuclear Research and Nuclear Energy,
Basic Electronics By Asst Professor : Dhruba Shankar Ray For B.Sc. Electronics Ist Year 1.
Avalanche Transit Time Devices
Taklimat UniMAP Universiti Malaysia Perlis WAFER FABRICATION Hasnizah Aris, 2008 Lecture 2 Semiconductor Basic.
● Problem addressed: Mn-doped GaAs is the leading material for spintronics applications. How does the ferromagnetism arise? ● Scanning Tunneling Microscopy.
Influence of Point Defects on the Properties of Highly Mismatched Alloys Rachel Goldman, University of Michigan Ann Arbor, DMR It has been suggested.
Plasma Application LAB Wide range dielectric spectroscopy of ZnO-based varistors as a function of sintering time 발표자 : 권득철.
ENE 311 Lecture 9.
Measurement of nano-scale physical characteristics in VO 2 nano-wires by using Scanning Probe Microscope (SPM) Tanaka lab. Kotaro Sakai a VO 2 nano-wire.
1 光電子分光でプローブする 遷移金属酸化物薄膜の光照射効果 Photo-induced phenomena in transition-metal thin films probed by photoemission spectroscopy T. Mizokawa, J.-Y. Son, J. Quilty,
Contents 1. Mechanisms of ultrafast light-matter interaction A. Dipole interaction B. Displacive excitation of phonons C. Impulsive stimulated Raman and.
SOLIDS AND SEMICONDUCTOR DEVICES - I
Materials 286K Class 09. VO 2, V 2 O 3 Morin reported on TiO, VO, Ti 2 O 3, V 2 O 3, and VO 2 Morin, Phys. Rev. Lett. 3 (1959) 34–36.
Nanoscale imaging and control of resistance switching in VO 2 at room temperature Jeehoon Kim, Changhyun Ko, Alex Frenzel, Shriram Ramanathan, and Jennifer.
Scanning capacitance microscopy
Looking Inside Hidden Excitons with THz Radiation Tim Gfroerer Davidson College Supported by the American Chemical Society – Petroleum Research Fund.
Introduction to semiconductor technology. Outline –4 Excitation of semiconductors Optical absorption and excitation Luminescence Recombination Diffusion.
Raman Scattering As a Probe of Unconventional Electron Dynamics in the Cuprates Raman Scattering As a Probe of Unconventional Electron Dynamics in the.
Terahertz-field-induced insulator-to-metal transition in vanadium dioxide metamaterial Hiroki Okada Asida Lab. Osaka Univ.
Structural Determination of Solid SiH 4 at High Pressure Russell J. Hemley (Carnegie Institution of Washington) DMR The hydrogen-rich solids are.
Optoelectronics.
المملكة العربية السعودية وزارة التعليم العالي - جامعة أم القرى كلية الهندسة و العمارة الإسلامية قسم الهندسة الكهربائية ELECTRONIC DEVICES K INGDOM.
1 ME 381R Lecture 13: Semiconductors Dr. Li Shi Department of Mechanical Engineering The University of Texas at Austin Austin, TX
Band Theory of Electronic Structure in Solids
Energy Bands and Charge Carriers in Semiconductors
Tunable excitons in gated graphene systems
Question on Van der Waals Interactions
Metallic Solids Metallic bond: The valence electrons are loosely bound. Free valence electrons may be shared by the lattice. The common structures for.
Conductivity Charge carriers follow a random path unless an external field is applied. Then, they acquire a drift velocity that is dependent upon their.
Conduction of Electricity in Solids
Lecture 2 OUTLINE Important quantities
Degenerate Semiconductors
Non-metal to Metal Transitions
Lecture 2 OUTLINE Semiconductor Fundamentals (cont’d)
Introduction to Materials Science and Engineering
Energy Band 7 In free electron model, electrons occupy positive energy levels from E=0 to higher values of energy. They are valence electron so called.
Types of Semiconductor Materials By Dr
Conduction of Electricity in Solids
Presentation transcript:

Phase Transitions in VO2 – Nikita Butakov Mott vs. Mott-Hubbard Transitions Role of Lattice vs. Electronic Subsystems Presence of intermediary phases Trigger-dependent excitation pathways Electron/hole doping Heating Structural distortions

Thermally Induced Insulator-Metal Phase Transition in VO2 Thermally induced insulator-metal transition in VO2 probed with Infrared Spectroscopy and a Scanning Near-field Infrared Microscope (SNIM) technique Percolative nature clearly apparent “Dielectric catastrophe” in the low frequency dielectric constant at the IMT Qazilbash, Brehm, Chae, Ho, Andreev, Kim, Yun, Balatsky, Maple, Keilmann, Kim, Basov. Mott Transition in VO2 Revealed by Infrared Spectroscopy and Nano-Imaging. Science 318, 1750 (2007).

Thermally Induced Insulator-Metal Phase Transition in VO2 Optical conductivity measurements of the metallic inclusions indicate the presence of a correlated metallic phase Divergent effective mass associated with Mott transitions The increasing conductivity in the vicinity of the pseudogap region indicates localization, and therefore correlation Rutile metal phase consistent with “bad metal” behavior (typically associated with high scattering rates and disordered structures) Qazilbash, Brehm, Chae, Ho, Andreev, Kim, Yun, Balatsky, Maple, Keilmann, Kim, Basov. Mott Transition in VO2 Revealed by Infrared Spectroscopy and Nano-Imaging. Science 318, 1750 (2007).

Photo-Induced Insulator-Metal Phase Transition in VO2 Structure probed on short time scales with a combination of pump/probe spectroscopy and ultrafast electron diffraction Rapid time scale for the diffraction peak associated with the periodic lattice distortion Slow increase in the diffraction peaks associated with valence charge distribution For small fluence, the slow time scale diffraction peak increases, indicative of a partial transition into a conductive state Morrison, Chatelain, Tiwari, Hendaoui, Bruhacs, Chaker, Siwick. A photoinduced metal-like phase of monoclinic VO2 revealed by ultrafast electron diffraction. Science 346, 445 (2014).

Photo-Induced Insulator-Metal Phase Transition in VO2 Difference pair distribution functions for fast dynamics (top) and slow dynamics (bottom) Fast dynamics correspond to non-thermal melting of the PLD (increase in R-phase V-V bond length and a reduction in M-phase dimer separation) Slow dynamics correspond to an increase of the valence charge density onto the V dimer bonds while decreasing the electrostatic potential on oxygen atoms Morrison, Chatelain, Tiwari, Hendaoui, Bruhacs, Chaker, Siwick. A photoinduced metal-like phase of monoclinic VO2 revealed by ultrafast electron diffraction. Science 346, 445 (2014).

Photo-Induced Insulator-Metal Phase Transition in VO2 (i) t2g bands overlap at the Fermi energy in the rutile metallic phase (ii) Periodic lattice distortion splits d|| states into bonding and anti-bonding bands (iii) Electronic correlations further split bands into an Upper Hubbard Band and a Lower Hubbard Band, corresponding to a Mott-Hubbard system (iv) Optical excitation with sufficiently low fluence can drive a 1D redistribution of occupancy, without melting the periodic lattice distortion Morrison, Chatelain, Tiwari, Hendaoui, Bruhacs, Chaker, Siwick. A photoinduced metal-like phase of monoclinic VO2 revealed by ultrafast electron diffraction. Science 346, 445 (2014).

X-Ray Induced Insulator-Metal Phase Transition in VO2 VO2 illuminated under 10.3 keV x-rays at room temperature Persistent photoconductivity decays over several days, suggesting that this transition is not thermally driven May be attributed to the disassociation of V-V dimers, or the formation of narrow metallic filaments along VOx grain boundaries Long recombination times are attributed to phonon-assisted hopping and/or tunneling through potential barriers IMT temperature not affected by illumination, in contrast to high-Tc cuprates, in which illumination modifies the superconducting transition temperature Dietze, Marsh, Wang, Ramírez, Cai, Mohanty, I.K. Schuller, and Shpyrko. X-ray-induced persistent photoconductivity in vanadium dioxide. Phys. Rev. B 90, 165109, (2014).

X-Ray Induced Insulator-Metal Phase Transition in VO2 Local structure was probed using focused x-rays with exposure times of 8 sec On the left column, the change in the Bragg diffraction peak is shown, on the right, the change in photoconductivity No apparent signatures of the metallic rutile phase post x-ray illumination Insulating Monoclinic Post Illumination Metallic Rutile Dietze, Marsh, Wang, Ramírez, Cai, Mohanty, I.K. Schuller, and Shpyrko. X-ray-induced persistent photoconductivity in vanadium dioxide. Phys. Rev. B 90, 165109, (2014).

Current Driven Insulator-Metal Phase Transition in VO2 Is the IMT the result of a structural phase transition? Or is due to electron/hole doping? In this study, the local temperature was probed with a calibrated fluorescent nanosensor Joule heating results in a significant increase in local temperature, which can be large enough to drive a phase transition Zimmers, Aigouy, Mortier, Sharoni, Wang, West, Ramirez, I. K. Schuller. Role of Thermal Heating on the Voltage Induced Insulator-Metal Transition in VO2. PRL 110, 056601 (2013).

Charge Injection Driven Insulator-Metal Phase Transition in VO2 Holes injected from Si into VO2 with a metal-oxide-semiconductor structure Found that time delays are too fast, and leakage currents are too small, to attribute changes in conductivity to thermally induced phase transitions Effects attributed to an increase in charge carrier density, which screens Coulomb interactions, and effectively reduces the IMT temperature, and eliminates the Mott-Hubbard energy gap Stefanovich, Pergament, Stefanovich. Electrical switching and Mott transition in VO2. Journal of Physics: Condensed Matter, 12, 8837–8845 (2000).

Other Ways of Driving Phase Transitions Pressure Resonant Excitation of Phonons with THz and X-Ray Photons Strain-Induced Ordering Spontaneous symmetry breaking of the insulating monoclinic state Liu, Wagner, Zhang, McLeod, Kittiwatanakul, Fei, Abreu, Goldflam, Sternbach, Dai, West, Lu, Wolf, Averitt, and Basov. Symmetry breaking and geometric confinement in VO2: Results from a three-dimensional infrared nano-imaging. Appl. Phys. Lett. 104, 121905 (2014). Marezio, McWhan, Remeika, and Dernier. Structural Aspects of the Metal-Insulator Transitions in Cr-Doped VO2. Physical Review B, 5, 2541, (1972).