IAEA CRP: Ion Beam Modification of Insulators RCM, Dec. 10-14, 2007, FNRC, Uni. Chiang Mai, Thailand Study of the formation of ferro-, para- and superpara-

Slides:



Advertisements
Similar presentations
Ion beam Analysis Joele Mira from UWC and iThemba LABS Tinyiko Maluleke from US Supervisor: Dr. Alexander Kobzev Dr. Alexander Kobzev.
Advertisements

Ion Beam Analysis techniques:
Implantation and post-annealing characteristics when impinging small B n clusters into silicon at low fluence J.H. Liang, H.M. Han Department of Engineering.
Electron Spin Resonance (ESR) Spectroscopy
When an nucleus releases the transition energy Q (say 14.4 keV) in a  -decay, the  does not carry the full 14.4 keV. Conservation of momentum requires.
Study of sputtering on thin films due to ionic implantations F. C. Ceoni, M. A. Rizzutto, M. H. Tabacniks, N. Added, M. A. P. Carmignotto, C.C.P. Nunes,
57Fe Mössbauer Spectroscopy
HARMONICALLY MODULATED STRUCTURES S. M. Dubiel * Faculty of Physics and Computer Science, AGH University of Science and Technology, PL Krakow, Poland.
6-1 RFSS: Lecture 6 Gamma Decay Part 2 Readings: Modern Nuclear Chemistry, Chap. 9; Nuclear and Radiochemistry, Chapter 3 Energetics Decay Types Transition.
Magnetism III: Magnetic Ordering
Corey Thompson Technique Presentation 03/21/2011
Chapter 8 Ion Implantation Instructor: Prof. Masoud Agah
ECE/ChE 4752: Microelectronics Processing Laboratory
Mossbauer Spectroscopy
1Ruđer Bošković Institute, Zagreb, Croatia
Mössbauer spectroscopy References: J.P. Adloff, R. Guillaumont: Fundamentals of Radiochemistry, CRC Press, Boca Raton, 1993.
PC4250 Secondary Ion Mass Spectrometry (SIMS). What is SIMS? SIMS is a surface analysis technique used to characterize the surface and sub-surface region.
57 Mn Mössbauer collaboration at ISOLDE/CERN Emission Mössbauer spectroscopy of advanced materials for opto- and nano- electronics Spokepersons: Haraldur.
Atomic Absorption Spectroscopy
Magnetic, Transport and Thermal Properties of La 0.67 Pb 0.33 (Mn 1-x Co x )O y M. MIHALIK, V. KAVEČANSKÝ, S. MAŤAŠ, M. ZENTKOVÁ Institute of Experimental.
Ion Beam Analysis Dolly Langa Physics Department, University of Pretoria, South Africa Blane Lomberg Physics Department, University of the Western Cape,
Superconducting FeSe studied by Mössbauer spectroscopy and magnetic measurements A. Błachowski 1, K. Ruebenbauer 1, J. Żukrowski 2, J. Przewoźnik 2, K.
FRANK LABORATORY OF NEUTRON PHYSICS ION BEAM ANALYSIS STANCIU-OPREAN LIGIA SUPERVISOR DR. KOBZEV ALEXANDER.
1 Components of Optical Instruments Lecture Silicon Diode Transducers A semiconductor material like silicon can be doped by an element of group.
Ion implantation doping of perovskites and related oxides Ulrich Wahl Instituto Tecnológico e Nuclear (ITN), Sacavém, Portugal Collaborators: João Guilherme.
NAN ZHENG COURSE: SOLID STATE II INSTRUCTOR: ELBIO DAGOTTO SEMESTER: SPRING 2008 DEPARTMENT OF PHYSICS AND ASTRONOMY THE UNIVERSITY OF TENNESSEE KNOXVILLE.
Ion Implantation and Ion Beam Analysis of Silicon Carbide Zsolt ZOLNAI MTA MFA Research Institute for Technical Physics and Materials Science Budapest,
This Materials World Network collaborative program brings researchers (Alford and Mayer) from Arizona State University (ASU) and (D. Adams and N. Tile)
Applications of Mössbauer Spectroscopy at WITS and ISOLDE/CERN by Professor Deena Naidoo Wits-NECSA Workshop September 2015.
Low Temperature Characteristics of ZnO Photoluminescence Spectra Matthew Xia Columbia University Advisor: Dr. Karl Johnston.
INTEGRATED CIRCUITS Dr. Esam Yosry Lec. #4. Ion Implantation  Introduction  Ion Implantation Process  Advantages Compared to Diffusion  Disadvantages.
Direct identification of interstitial Mn in Ga 1-x Mn x As and evidence of its high thermal stability Lino Pereira 1, 2, 3 U. Wahl 2, J. G. Correia 2,,
Compositional dependence of damage buildup in Ar-ion bombarded AlGaN K. Pągowska 1, R. Ratajczak 1, A. Stonert 1, L. Nowicki 1 and A. Turos 1,2 1 Soltan.
Daniela Adriana LĂCĂTUŞ1 Supervisor: Alexander Pavlovich KOBZEV
Ch. Urban 1, S. Janson 1, U. Ponkratz 1,2, O. Kasdorf 1, K. Rupprecht 1, G. Wortmann 1, T. Berthier 3, W. Paulus 3 1 Universität Paderborn, Department.
Burnaby - Dublin - Freiberg – Manchester – Saarbrücken - ISOLDE Collaboration Spokesperson: M. Deicher Contact person: K. Johnston.
Magnetic and structural properties of manganese doped (Al,Ga)N studied with Emission Mössbauer Spectroscopy Spokespersons: Alberta Bonanni Haraldur Páll.
Basics of Ion Beam Analysis
Donor-Acceptor Complexes in ZnO
Synthesis and Properties of Magnetic Ceramic Nanoparticles Monica Sorescu, Duquesne University, DMR Outcome Researchers at Duquesne University.
Mineral Spectroscopy Visible Infrared Raman Mössbauer NMR.
Questions/Problems on SEM microcharacterization Explain why Field Emission Gun (FEG) SEM is preferred in SEM? How is a contrast generated in an SEM? What.
Emission Channeling ISOLDE Nick Charron. What is Channeling? “The extended propagation of the particles we know and love (electrons, positrons - even.
New emission Mössbauer spectroscopy studies at ISOLDE in 2015 Haraldur Páll Gunnlaugsson, Torben E. Mølholt, Karl Johnston, Juliana Schell, The Mössbauer.
Magnetic properties of (III,Mn)As diluted magnetic semiconductors
Fighting f-factors and implantation damage in emission Mössbauer spectroscopy Haraldur Páll Gunnlaugsson* The Mössbauer collaboration at ISOLDE CERN The.
Overview of Tandem Accelerator Facility and related R&D Work at NCP Ishaq Ahmad
Boron and Phosphorus Implantation Induced Electrically Active Defects in p-type Silicon Jayantha Senawiratne 1,a, Jeffery S. Cites 1, James G. Couillard.
1 WORKSHOP AND USERS February 2007 Lattice site location of implanted Fe in SrTiO 3 and lattice damage recovery studies A. C. Marques 1,4 *, U. Wahl 1,2,
Jun Hee Cho1, Sang Gil Ko1, Yang kyu Ahn1, Eun Jung Choi2
Structural and Magnetic Properties of MgxSrxMnxCo1-3xFe2O4 Nanoparticle ferrites Nadir S. E. Oman School of Chemistry and Physics, University of KwaZulu-Natal,
Emission Mössbauer spectroscopy of advanced materials for opto- and nano-electronics Spokepersons: Haraldur Páll Gunnlaugsson Sveinn Ólafsson Contact person:
Mossbauer spectroscopy
Particle Size Dependence of Magnetic Properties in Cobalt Ferrite Nanoparticles Jun Hee Cho 1, Sang Gil Ko 1, Yang kyu Ahn 1, Eun Jung Choi 2 * 1 Department.
Ion Implantation CEC, Inha University Chi-Ok Hwang.
Characterization of He implanted Eurofer97
Sanghamitra Mukhopadhyay Peter. V. Sushko and Alexander L. Shluger
Emission Mössbauer Spectroscopy at ISOLDE/CERN
Mössbauer studies of dilute magnetic semiconductors
Introduction & Its instrumentation
Australian Nuclear Science and Technology Organisation, Australia
Hyperfine interaction studies in Manganites
آزمايشگاه فناوري نانو کفا آزمايشگاه فناوري نانو کفا
Fermi Level Dependent Diffusion in Silicon
CHEM 312: Lecture 6 Part 2 Gamma Decay
Atomic Absorption Spectroscopy
Atomic Absorption Spectroscopy. Atomic absorption spectroscopy is based on the same principle as the flame test used in qualitative analysis.
Magnetic Properties of Coordination Compounds
Z. Leśnikowski, E. Przelazły, K. Dziedzic-Kocurek, J. Stanek
Ion-beam, photon and hyperfine methods in nano-structured materials
Presentation transcript:

IAEA CRP: Ion Beam Modification of Insulators RCM, Dec , 2007, FNRC, Uni. Chiang Mai, Thailand Study of the formation of ferro-, para- and superpara- magnetic nano clusters by ion implantation itno suitable insulators Principal investigators : Prof. K. Bharuth-Ram, University of KwaZulu-Natal, Durban and iThemba LABS, Faure. S. Africa and iThemba LABS, Faure. S. Africa Prof. Dr. Hans Hofsaess, Universitaet Goettingen, Germany Prof. Dr. Hans Hofsaess, Universitaet Goettingen, Germany + Carsten Ronning, Peter Schaaf, Michael Uhrmacher, Uni-Goettingen. + Carsten Ronning, Peter Schaaf, Michael Uhrmacher, Uni-Goettingen. Terry Doyle, Cebo …, iThemba LABS, South Africa. Terry Doyle, Cebo …, iThemba LABS, South Africa. + Uli Wahl: Emission channeling + Uli Wahl: Emission channeling Gerd Weyer et al., MS following Mn57 implantation Gerd Weyer et al., MS following Mn57 implantation

Introduction Nanoclusters of Fm atoms have high proportion of surface atoms increase spin magnetic moment towards high spin limit reduction in effective quenching of the orbital magnetic moment. + quantum size effects + modified valence electron screening  Novel properties: magnetic moments enhanced by up to 35% superparamagnetic behaviour in clusters below a critical size magnetic behaviour in non-FM transition metals Applications in ultra-high recording magnetic recording media, information and telecommunications technology. Achieved already by ion implantation at doses of cm due to accumulation at extended lattice sites? or diffusion and agglomeration of implanted ions?

Objective: Investigate the implantation parameters required to achieve magnetic nano-clusters, i.e. energy and dose, sample temperature and annealing characteristics, Methods include Temperature dependent Moessbauer spectroscopy and magnetization measurements, to determine the size of clusters and their magnetic properties. RBS and Raman Spectrometry, MOKE, UV-VIS Transmission Spectrometry -- to determine implantation profile and complex formation in the host matrix.

Reported on in June 2006: Implant of 57 Fe at E = 60 keV, at Uni-Goettingen to a dose of 5 x cm -2. Substrates: 3C-SiC, CVD diamond, graphite Moessbauer spectroscopy (at UKZN) at RT and LN2 on 3C-SiC sample: as-implanted sample, and after annealing at 400 C. Moessbauer spectroscopy (at Uni-Goettingen) after annealing at 600 C VSM on as-implanted and after annealing at 600 C on 3C-SiC sample MOKE and Raman Spectroscopy on as- implanted and after annealing at 400 C and 600 C: CVD and 3C-SiC samples

Results: Mossbauer Measurements Mossbauer measurements were made with a approx. 8 mCi source (30 mCi in May 2003). Each spectrum at RT, has > 10 million events, accumulated over 4 weeks. At LN2, longer measurement time was required.

MOKE Measurements (Magneto-Optical Kerr Effect) a) As implanted b) T A = 900 K

VSM Measurements (TB Doyle, UKZN) SiC(Fe) sample, Virgin SiC, Holder VSM measurements only possible after acquisition of a bipolar power supply for magnet, obtained in 2005 as donation from the Alexander von Humboldt Stiftung. Plot shows average of data collected during many measurements over several months (TB Doyle). We are at the limit of resolution of the device, but a small ferromagnetic effect is noticeable.

Raman Spectroscopy a) CVD diamond as-Implanted b) CVD diamond annealed at 900 K c) 3C-SiC sample annealed at 900K

There is evidence of ferromagnetic and paramagnetic ordering, but data with better statistics is required. So, Plans for 2007 included: i) obtaining new, stronger Moessbauer Sources (50 mCi) ii) Increasing the concentration of Fe in the samples, iii) investigating implantation induced magnetization effects in other substrates. Early in 2007, enriched 57 Fe pellets were purchased, and implantation into 3C-SiC, CVD diamond, ZnO, SiO2 and graphite were undertaken at 60 and 80 keV energy, and up to a fluence of 1 x /cm 2 (at Goettingen). Two 50mCi MS sources ordered, eventually delivered in Oct Measurements from end October : CEMS, TMS.

SubstrateFluence (x10 16 /cm 2 ) Temp (K) MOKE RBSRaman UV-VISMOSS VSM CVD RT 600C RT Y YYYY YYYY 3C-SiC RT 400C RT 300C Y Graphite ZnO RT 325C Y YYYY SiO RT YY

SAIP 2007 Hyperfine Interactions and Measurables 1. Isomer Shift 2. Magnetic interaction E mag = - . B E mag = m I. g  N. B z  = k (  abs –  ref )( – ), lattice site, charge state 3. Electric Quadrupole Interaction

RBS Measurements 2 MeV 4 He+ Grazing angle =  10 O

UV-VIS Transmission 1.3C-SiC: virgin and implanted region i) as implanted, ii) Annealed at 350C. 2. ZnO: Implanted regions i) as implanted ii) Annealed at 350 C.

3C-SiC 1 x /cm 2

SiO 2

ZnO as Impl. T A = 350 C

Moessbauer Measurements 1.CVD Diamond:

Magnetization measurements ??? -- merger of UDW and UN  UKZN - School of Physics (and Fac. of Science) to Westville campus VSM equipment dismantled – and still in boxes!!!

Moessbauer Studies following 57 Mn implantation 57 Mn 57 Co EC  137 keV 14.4 keV, 98 ns 0 CE 57 Fe 5/2  3/2  ½½ Co source: 30 mCi + Typical dose: 5 x Fe  t m ~ 14 days lattice damage 2. In-beam MS CE and recoil implant 57 Fe* t m ~ 24 –36 hrs Dose < cm-2. t eff =  Mn* implantation Dose < cm-2.  decay  57Fe* E recoil = 40 keV t m ~ 10 min. At ISOLDE, CERN Mass separated 57 Mn* accelerated to 60 keV, and implanted into sample held at temp T (+  E) keV gammas detected in PPAC, mounted directly on to MDU.

Production of radioactive ion beams at ISOLDE, CERN.

3C-SiC

Graphite

Components: S1 : Single line D1: defect doublet Sx1 : sharp FM sextet Sx2 & Sx3: Broad sextets with Eq interaction. Effect is reversible.  due Fe-V-O complex??

Conclusions 1. The lighter mass substrates ( SiC, SiO 2 ) hold greater promise. 2. After implantation to a fluence of 1 x / cm 2  indications of magnetically split components in Moessbauer spectra  this fluence gives Moessbauer spectra with acceptable statistics  higher dose implantation with Fe-56 other fm species (Mn, Co) non-fm species (Na, C)

ACKNOWLEDGEMENTS 1.IAEA – Wulf Rosenberg and Francoise Mullhauser 2.Hans Hofsaess, Uli wahl and colleagues in Goettingen 3.Yu Liangden and FNRC, Chiang Mai University 4.The Group generally. Thank You