1 Accurate Power Grid Analysis with Behavioral Transistor Network Modeling Anand Ramalingam, Giri V. Devarayanadurg, David Z. Pan The University of Texas.

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Presentation transcript:

1 Accurate Power Grid Analysis with Behavioral Transistor Network Modeling Anand Ramalingam, Giri V. Devarayanadurg, David Z. Pan The University of Texas at Austin, Intel Research - Hillsboro

Slide 2 Motivation Power grid analysis rely on a model of representing the transistor network as a current source (CS). This simplification enables decoupling the transistor network from the power grid. The power grid problem becomes tractable due this simplification. But CS modeling might lead to pessimism in the voltage drop prediction. Does not accurately model transistor load cap t v(t) CS Spice

Slide 3 Current Source Modeling Current source models switching gates Also drain cap of a gate (not shown) is modeled approximately The power grid problem mathematically reduces to solving a linear system of equations Ax = b. Efficient techniques to solve it

Slide 4 Drawbacks of Current Source Modeling When a transistor switches on and connects to the power grid, initially the charge is supplied by the transistors that are already on. The transistors which are already on, act much like a “decap” Need accurate modeling of load cap of gates  Inaccurate modeling results in the overestimation of decap needed. The number of transistors that get switched on differs from cycle to cycle. Thus the amount of capacitance seen by the power grid also varies from cycle to cycle.

Slide 5 Literature Chen-Neely [IEEE T-CPM, 1998] Modeling techniques to analyze power grid Current source model to decouple transistor network from power grid Lot of work on solving linear system of equations arising out of power grid analysis Preconditioned Krylov [Chen and Chen, DAC 2001] Random-Walk [Qian-Nassif-Sapatnekar, DAC 2003]

Slide 6 Switch model for transistors Switch Model of a transistor [Horowitz 1983] Originally proposed to calculate the delay of transistor Accurately models capacitance of every transistor in the gate Correctly models the time varying capacitance

Slide 7 Topology due to Switch model The major disadvantage of the switch model is, based on whether the switch is on or off, the topology changes 10 01/R 2 V1V1 V2V2 = V dd 0 R1R1 R2R2 1 2 A open R1R1 R2R2 V dd /R 1 +1/R 2 V1V1 V2V2 = V dd 0 -1/R 1 0 A close

Slide 8 Problems with Switch Modeling Conductance matrix (A) changes with the state of the switch A open x = b A close x = b Modeling k transistors leads to 2 k different conductance matrices. k = 10 => 1024 different conductance matrices Infeasible even for a complex gate ! Thus we need a constant conductance matrix irrespective of the state of the switches.

Slide 9 Behavioral Model of a Switch In Ax = b, instead of capturing switch position in A can we capture it in b ? Model the switch behaviorally The behavior of the ideal switch (s) is very simple: s = open => i s = 0 s = close => v s = 0 i s v s s The behavioral modeling helps capture the state of switches in b (Ax = b) Results in constant conductance matrices irrespective the state of switches

Slide 10 Example of behavioral model of switch Applying Kirchhoff’s law we get - V dd -v s + i s (r s +R 1 +R 2 ) = 0 To emulate the behavior of switch Open: i s = 0 => Set v s =-V dd Close: v s = 0 R2R2 R1R1 R2R2 V dd R1R1 vsvs rsrs Switch model isis

Slide 11 Constant conductance matrix Since only the value of the voltage source changes the topology does not change R2R2 R1R1 V dd vsvs rsrs isis Only v s depends on the state of the switch Hence conductance matrix is a constant irrespective of the state of switches V1V1 V2V2 = V dd vsvs 1 1 V3V3 V4V /r s 1/r s +1/R 1 -1/R /R 1 +1/R

Slide 12 A bit history of behavioral switch model More formally the switch model is called the Associated Discrete Circuit (ADC) model Developed independently by two groups: Hui and Morrall (University of Sydney, Australia) Pejović and Maksimović (University of Colorado, Boulder) Both of the groups were motivated by the switching power system simulations  Papers published in 1994

Slide 13 Current source based ADC for switch Current source based ADC is more suited to simulation compared with voltage source based ADC In a MNA formulation Current Source does not need a separate row in conductance matrix rsrs isis vsvs jsjs To emulate the behavior of switch Open: Set j s =-i s Close: Set j s = 0

Slide 14 M-matrix Theorem: the resultant conductance matrix is a M-matrix Lot of efficient algorithms for solving M-matrix Preconditioned Krylov [Chen-Chen DAC 2001] Multigrid methods [Kozhaya-Nassif-Najm TCAD 2002] Thus algorithms previously presented in the literature for power grid analysis can be applied to our new model without much change.

Slide 15 Speedup Techniques Phases in power grid simulation Local charge redistribution phase.  When the transistor gets switched on to the power grid, the charge is supplied by the local capacitors. Global recovery phase.  Bringing capacitors back to their original state v(t) Local charge redistribution Global recovery t

Slide 16 Speedup Techniques Local charge redistribution phase Time-step is decided by the fast transients To track them accurately, the time-step has to be small When the power grid recovers back after this fast transient voltage drop the time-step can be big Can we calculate this voltage drop using a fast approximation without doing a detailed simulation? Then we can use a bigger time-step in rest of the simulation. Use the Principle of Locality [Zhao-Roy-Koh TCAD 2002] Drawback: Applies only if the switching events are isolated

Slide 17 Speedup Techniques Global recovery phase Once grid recovers back to the supply voltage in a given cycle it is going to stay at the supply voltage. Thus the power grid simulation can be fast-forwarded to the start of the next cycle. v(t) Fast forward t

Slide 18 Experiment setup Scripts were written using awk/perl/matlab The experiments were done using a 32-bit Linux machine with 4 GB RAM and running at 3.4 GHz The delay models were generated using the 90nm Berkeley Predictive Technology Model While solving Ax = b we employed simple LU factorization Used Approximate Minimum Degree (symamd) reordering on A to obtain sparse L and U

Slide 19 Results The error in voltage drop predicted by current source model for ckt9 compared to ckt1 is bigger. In ckt9, there are more transistors hooked to the power grid node compared to ckt1. Decoupling capacitance provided by the transistors which are on, is much bigger in ckt9 compared to ckt1.

Slide 20 Summary We analyzed the power grid by modeling the transistor network accurately by switch models instead of a time- varying current source. The transistor is modeled as a simple switch in series with a RC circuit. The switch is modeled behaviorally as a Norton current source model. The behavioral modeling of the switch is the key in making the proposed simulation efficient. More accurate compared to the current source model. Also retains the efficiency of current source model by having a constant conductance matrix.

Slide 21 Conclusions Proposed a behavioral model for transistors in the context of power grid analysis. The proposed model offers the middle ground between the accuracy of SPICE simulation and the speed of the current source model. Working on fast approximation methods to find the voltage drop in the local charge redistribution faster This will help to improve time-step and hence the runtime.

Slide 22 Thanks