Lois: “Save me, Dr. HBT – from those evil HFETs.”

36 Years

InAs 360 GaSb 770 AlSb 1550 GaAs 1420 InGaAs 760 InAlAs 1460 InP GaAsSb InSb AlAs 2170 InGaP Bandgap Heaven

Increasing electron Velocity

2000 Nobel Prize in Physics "for developing semiconductor heterostructures used in high-speed- and opto-electronics," 2002 IEEE Medal of Honor "for contributions to high-frequency transistors, and hot- electron devices, especially heterostructure devices from heterostructure bipolar transistors to lasers, and their molecular beam epitaxy technology." Honorary doctorates from the Technical University of Aachen (Germany; 1985), the University of Lund (Sweden; 1998), the University of Colorado (USA; 2001), and the University of Jena (Germany; 2008). 2001, Grand Cross of the Order of Merit of the Federal Republic of Germany, the highest award given by the German government. He is a member of both the National Academy of Engineering and the National Academy of Sciences.