Fabrication of p-n junction in Si Silicon wafer [1-0-0] Type: N Dopant: P Resistivity: 10-20 Ω-cm Thickness: 505-545 µm.

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Presentation transcript:

Fabrication of p-n junction in Si Silicon wafer [1-0-0] Type: N Dopant: P Resistivity: Ω-cm Thickness: µm

Oxidize the Si wafer SiO 2

Photo resist Mask A Expose the PR through the mask with UV light Cover the SiO2 with photoresist (PR) Load Mask A

SiO 2 Photo resist Mask A Remove exposed PR Remove SiO 2

::::::::::::: SiO 2 ::::::::::::: Windows Implanted p region B B Remove unexposed PRDoping by ion implantation

:::::::::: SiO 2 :::::::::: Windows Implanted p region B B Remove unexposed PRDoping by ion implantation

::::::::::::: SiO 2 ::::::::::::: B B Al deposition for contacts

::::::::::::: SiO 2 ::::::::::::: B B Lithography (Mask B) Mask B Photo resist

::::::::::::: SiO 2 ::::::::::::: B B Mask B Photo resist Developer/Al Etching

::::::::::::: SiO 2 ::::::::::::: B B Remove unexposed PR p-n junction