Silicon Optical Modulators

Slides:

Advertisements

Similar presentations

Semiconductors Chapters

Advertisements

Savas Kaya and Ahmad Al-Ahmadi School of EE&CS Russ College of Eng & Tech Search for Optimum and Scalable COSMOS.

6.1 Transistor Operation 6.2 The Junction FET

Chapter 9. PN-junction diodes: Applications

Metal Oxide Semiconductor Field Effect Transistors

All-Silicon Active and Passive Guided-Wave Components

Derek Wright Monday, March 7th, 2005

Jan M. Rabaey Digital Integrated Circuits A Design Perspective.

1 Fundamentals of Microelectronics  CH1 Why Microelectronics?  CH2 Basic Physics of Semiconductors  CH3 Diode Circuits  CH4 Physics of Bipolar Transistors.

Silicon photonics is the merging of silicon electronic components, and photonics. Silicon has revolutionized the electronics industry due to the following.

Resonant Tunneling Diodes Johnny Ling, University of Rochester December 16 th, 2006.

Lecture 11: MOS Transistor

Lecture #26 Gate delays, MOS logic

Introduction to VLSI Circuits and Systems, NCUT 2007 Chapter 6 Electrical Characteristic of MOSFETs Introduction to VLSI Circuits and Systems 積體電路概論賴秉樑.

Lecture 15 OUTLINE MOSFET structure & operation (qualitative)

EE415 VLSI Design The Devices: MOS Transistor [Adapted from Rabaey’s Digital Integrated Circuits, ©2002, J. Rabaey et al.]

Lecture 10: PN Junction & MOS Capacitors

Spring 2007EE130 Lecture 30, Slide 1 Lecture #30 OUTLINE The MOS Capacitor Electrostatics Reading: Chapter 16.3.

Course Outline 1. Chapter 1: Signals and Amplifiers

A 10 Gb/s Photonic Modulator and WDM MUX/DEMUX Integrated with Electronics in 0.13um SOI CMOS High Speed Circuits & Systems Laboratory Joungwook Moon 2011.

Lecture 0: Introduction. CMOS VLSI Design 4th Ed. 0: Introduction2 Introduction  Integrated circuits: many transistors on one chip.  Very Large Scale.

MOS Capacitors ECE Some Classes of Field Effect Transistors Metal-Oxide-Semiconductor Field Effect Transistor ▫ MOSFET, which will be the type that.

Array Waveguide Gratings (AWGs). Optical fiber is a popular carrier of long distance communications due to its potential speed, flexibility and reliability.

Lecture 19 OUTLINE The MOSFET: Structure and operation

EE415 VLSI Design The Devices: Diode [Adapted from Rabaey’s Digital Integrated Circuits, ©2002, J. Rabaey et al.]

Chapter 1 Power Electronic Devices

BJT in Saturation Mode Section 4.5.

MOS Capacitors MOS capacitors are the basic building blocks of CMOS transistors MOS capacitors distill the basic physics of MOS transistors MOS capacitors.

MODULATION AIDA ESMAEILIAN 1. MODULATION  Modulation: the process of converting digital data in electronic form to an optical signal that can be transmitted.

WP4 – Optical Processing Sub-System Development Start M06, finish M30 UCC lead Plans for next 6 months: –Begin firmware/control work –Focus on initial.

Si-Photonics at CERN TWEPP 2013, Perugia, Italy Opto Working Group,26th September 2013 Sarah Seif El Nasr-Storey.

EXAMPLE 6.1 OBJECTIVE Fp = 0.288 V

Optical Filter 武倩倩 Outline Introduction to silicon photonics Athermal tunable silicon optical filter Working principle Fabricated device Experiments.

20/03/2003 Impact of Carbon on short channel behavior in deep submicronic N MOSFET’s 4 th European Workshop on Ultimate Integration of Silicon Impact of.

Limitations of Digital Computation William Trapanese Richard Wong.

Introduction Trapped Plasma Avalanche Triggered Transit mode Prager

High speed silicon Mach-Zehnder modulator

Fabrication of CMOS Imagers

© 2012 Eric Pop, UIUCECE 340: Semiconductor Electronics ECE 340 Lecture 30 Metal-Semiconductor Contacts Real semiconductor devices and ICs always contain.

MVE MURI 99 Kick-off Meeting R. Barker, Technical Monitor Started 1 May 99 October 1999 Project Introduction and Motivation Millimeter-wave switches may.

The Transistor 1. How does a Transistor work The Bipolar Transistor The Field Effect Transistor 2. Comparing a Transistor to other devices Diode vs. the.

Introduction to MOS Transistors Section Selected Figures in Chapter 15.

Switch Realization for DC-DC Converters

Lecture 18 OUTLINE The MOS Capacitor (cont’d) – Effect of oxide charges – V T adjustment – Poly-Si gate depletion effect Reading: Pierret ; Hu.

External Modulator. When data rates were in the low gigabit range and transmission distances were less than 100 km or so, most fiber optic transmitters.

© Sean Nicolson, BCTM 2006 © Sean Nicolson, 2007 A 2.5V, 77-GHz, Automotive Radar Chipset Sean T. Nicolson 1, Keith A. Tang 1, Kenneth H.K. Yau 1, Pascal.

The Design and Analysis of Multi-megawatt Distributed Single Pole Double Throw (SPDT) Microwave Switches Sami G. Tantawi, and Mikhail I. Petelin Stanford.

PIN DIODE CORPORATE INSTITUTE OF SCIENCE & TECHNOLOGY, BHOPAL DEPARTMENT OF ELECTRONICS & COMMUNICATIONS BY- PROF. RAKESH k. JHA.

Simulations Based on Paper

Introduction to semiconductor technology. Outline –6 Junctions Metal-semiconductor junctions –6 Field effect transistors JFET and MOS transistors Ideal.

Integrated Circuit Devices

Metal-oxide-semiconductor field-effect transistors (MOSFETs) allow high density and low power dissipation. To reduce system cost and increase portability,

Waveguide Ge-PD Simulation

1 Fatima Hussain. Introduction The unprecedented demand for optical network Capacity has fueled the development of long-haul optical network systems which.

EE130/230A Discussion 10 Peng Zheng.

Paper Review Yunsu Sung.

MOS Transistor Theory The MOS transistor is a majority carrier device having the current in the conducting channel being controlled by the voltage applied.

Silicon Photonics(15/2) Minkyu Kim Paper Review Nanophotonics, 2014 I.Introduction II.Performance metrics of modulators III.Design of modulators IV.Current.

Varactor Diode or Varicap Diode Working and Applications.

Other diodes Electronic device and circuit Active learning assignments

Varactor Diode or Varicap Diode Working and Applications

PN-junction diodes: Applications

Discussion today Over the next two class periods we will be designing a ring resonator based 2-channel wavelength division multiplexing (WDM) optical link.

WAVEGUIDE COMPONENTS BY: P. Vijaya & M. Niraja.

Discussion today Over the next two class periods we will be designing a ring resonator based 2-channel wavelength division multiplexing (WDM) optical link.

Lecture #15 OUTLINE Diode analysis and applications continued

Modern Semiconductor Devices for Integrated Circuits (C. Hu)

Lecture #16 OUTLINE MOSFET ID vs. VGS characteristic

Solid State Electronics ECE-1109

Presentation transcript:

Silicon Optical Modulators Recent developments in fabrication of High Speed Modulators J ee290f

Outline Motivation Png, Reed, et al. work from Surrey. Intel device Shows basic principle and gives one of the two major design types Intel device History making device, designed and fabricated in alternate major design type. Conclusions

Motivation Very clear: Si modulators means CMOS integration and using all our experience in silicon micromachining. Unfortunately, prior to 2003 the fastest Si optical modulator was ~20MHz (Lithium Niobate modulators are ~10GHz).

p-i-n Si Optical Modulators 1/4 Follows the work presented by Png, Reed, et al from Surrey University (UK).

p-i-n Si Optical Modulators 2/4 VD is applied to Anode vs. Cathode. → forward biased p-i-n junction. → e and holes injected into guiding region → changes refractive index

p-i-n Si Optical Modulators 3/4 n = ne + nh = -[8.8 x 10-22(Ne) + 8.5 x 10-18(Nh)0.8]  = e + h = 8.5 x 10-18 (Ne) + 6.0 x 10-18(Nh) From R.A. Soref & B. R. Bennett “Electrooptical Effects in Silicon” Jour. Of Quan. Elec. 1987.

p-i-n Si Optical Modulators 4/4 Simulation results show modulation can be optimized to 1.3GHz and a 180 at .7 mA of current. However, performance is very dependant on doping profile and a critical dimensions are not very tolerant. As of late 2003, fabrication is underway.

MOS Si Optical Modulators 1/4 Still uses the plasma dispersion effect, but implements a MOS capacitor to induce change in free carrier density instead of a p-i-n device. Again designed for single mode 1.55m.

MOS Si Optical Modulators 2/4 Apply VD to poly. Charge accumulation on both sides of gate oxide. Ne = Nh = [/etoxt]*(VD – VFB) ne = -8.8 x 10-22Ne nh = -8.5 x 10-18(Nh)0.8  = (2/)neffL

MOS Si Optical Modulators 3/4 Implemented phase shifter in both arms of a MZI. For VD = 7.7V → 16dB total switch. Loss is the big key: ~15.3dB insertion loss (~4.3dB from coupling & ~6.7dB from poly guides).

MOS Si Optical Modulators 4/4 See 3dB roll off at >1GHz from MOS cap. Switching test on psuedo-random time signal.

Conclusion MOS modulator has poor loss figures and still an order of magnitude slower than commercial modulators. Intel argues these can both be theoretically fixed by decreasing the size of the device and using Si in the guide region instead of poly (still integrable?). P-i-n modulator is still being fabricated and depends on its optimal design for the high values achieved, so potentially success or failure from fabrication runs.