Built-In Self-Test for Radio Frequency System-On-Chip Bruce Kim The University of Alabama.

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Presentation transcript:

Built-In Self-Test for Radio Frequency System-On-Chip Bruce Kim The University of Alabama

2 Outline Proposed BIST Architecture Developed Equations Measurement Results Conclusions

3 Motivation Today System-On-Board (SOB) Future System-On-Chip (SOC)

4 RF Testing Expensive Labor intensive

5 What is BIST (Built-In Self-Test)? A test technique which allows the SOC to evaluate its own quality without expensive external equipment.

6 Test Flow Functional Test Proposed BIST (Go-No Go) Singulated Wafer Level Testing Package Proposed BIST Functional Testing

7 Wireless Radio Duplexer VGA LO VGA ADC DSP DAC LO Phase Shifter LO Phase Shifter LNA PA

8 Proposed RF BIST for LNA S1 closed: Measure V T1 S2 & S3 closed: Measure V T2

9 Proposed RF BIST Hardware

10 Equivalent Circuit Model

11 Development of Equations (1) (2) (3)

12 Fault-Free Input Impedance : Voltage gain of Test Amplifier : Voltage gain of BIST

13 Faulty-Case Input Impedance( V T2 ) : Voltage gain of BIST under faulty case

14 Fault-Free Voltage Gain : Voltage gain of BIST

15 Faulty-Case Voltage Gain ( V T1, V T2 ) : Voltage gain of BIST under faulty case

16 Input Return Loss : Input Return Loss of BIST  Fault-Free Case  Faulty Case

17 Output Signal-to-Noise Ratio  Faulty Case  Fault-Free Case kT: -204 dB B: signal bandwidth

18 Summary of Equations

19 5GHz Low Noise Amplifier 0.18  m SiGe HBT Technology

20 Small-Signal Model for 5GHz LNA  Hybrid-π model for HBT with series resistance and two capacitances  Inductor model with series resistance  Stage 2: same topology as stage 1 Stage 2

21 RF BIST Circuit  Validation Procedure & System Calibration Test V T2 for Gain=3

22 Programmable Capacitor Banks for C B (D 3 D 2 D 1 ) = (001) for 5.25GHz, (011) for 2.4GHz and (111) for 1.8GHz

23 Chip Micrograph BIST block TA PD2 PD1

24 Defect Models  Defect Models for Actives

25 Defect Models  Defect Models for Passives

26 Measurement Set-Up for LNA and TA LNA TA PD1 PD2 S1 S2 V T1 V T2 v in R s =50  Z L  Labview Board S3 V L V T

27 Fault-Free Wafer Level Testing for Catastrophic Faults

28 Wafer Level Testing for Parametric Variations Tolerance:  20% Good Device Fault Free Device

29 Results Measured Values mean that external equipment was used. Simulation results are from ADS commercial software. Modeling results are from the Hybrid-  and other passives modeling in the LNA circuit.

30 Input Impedance of TA

31 Gain of TA

32 Input Impedances

33 Gains

34 Input Return Losses

35 Input VSWRs

36 Data Summary ImpedanceGainReturn LossSNR Fault-Free Q1 – open base terminal Lb +30% tolerance

37 ADC DAC Digital Signal Processor IF Filter RF Filter Power amp. Attenuator RF Filter IF Filter RF Filter Phase filter Amp. PLL VCO Switch RF Filter Antenna SoC Transceiver System Auto Compensation

Parametric Variations

39 Capacitor Mirror Banks (CMB) N = 8-bit: When (D 11 D 10 …D 5 D 4 ) = (00…01), C B = C b /8

40 L c1 Parametric Variations L c1 : Most sensitive component in LNA

41 Changes of C b1 to Compensate Gain

42 Gain Compensations L c1 : Most gain-sensitive component in LNA

43 Noise Figure Compensations

44 Programmable RF BIST Technique Used for GSM, Bluetooth, IEEE802.11g LNA S1 S2 V T1 V T2 v in R s =50  Z L  S3 LNA Under Test v L v T External Board BIST v L1 A/D Labview D N PC CMB

45 Test Technique Comparison

46 Limitation

47 On-going Work Construct automatic test structure with on- chip BIST structure and relays on a load board Develop a LabView software for test automation

48 Conclusions Introduced a new low-cost RF test hardware. Successful with programmable RF test for different standards. Self-compensation network for process and thermal variations.