Multi-terminal spin dependent transport in carbon nanotubes Chéryl FEUILLET-PALMA Laboratoire Pierre Aigrain Ecole Normale Supérieure, Paris France Co-workers.

Slides:

Advertisements

Similar presentations

A coherent subnanosecond single electron source

Advertisements

Reference Bernhard Stojetz et al. Phys.Rev.Lett. 94, (2005)

Gate Control of Spin Transport in Multilayer Graphene

S A N T A C L A R A U N I V E R S I T Y Center for Nanostructures September 25, 2003 Surface Phenomena at Metal-Carbon Nanotube Interfaces Quoc Ngo Dusan.

Electrolyte gating of single- walled carbon nanotubes University of California - Berkeley Materials Science Division, LBNL Jeffrey C. Gore Jiwoong Park.

Electrical transport and charge detection in nanoscale phosphorus-in-silicon islands Fay Hudson, Andrew Ferguson, Victor Chan, Changyi Yang, David Jamieson,

Budapest University of Technology and Economics Department of Electron Devices Microelectronics, BSc course Field effect transistors.

AC CONDUCTANCE AND NON-SYMMETRIZED NOISE AT FINITE FREQUENCY IN QUANTUM WIRE AND CARBON NANOTUBE Adeline CRÉPIEUX 1, Cristina BENA 2,3 and Inès SAFI 2.

14 février 2011Evaluation AERES1 Equipe de Nanophysique – Groupe 2 Membres permanents Adeline Crépieux MdC U2 Pierre Devillard MdC U1 Thibaut Jonckheere.

Dynamical response of nanoconductors: the example of the quantum RC circuit Christophe Mora Collaboration with Audrey Cottet, Takis Kontos, Michele Filippone,

QUANTUM TRANSPORT IN THE TUNNELING AND COTUNNELING REGIMENS Javier F. Nossa M.

Chernogolovka, September 2012 Cavity-coupled strongly correlated nanodevices Gergely Zaránd TU Budapest Experiment: J. Basset, A.Yu. Kasumov, H. Bouchiat,

Electrical Techniques MSN506 notes. Electrical characterization Electronic properties of materials are closely related to the structure of the material.

Single electron Transport in diluted magnetic semiconductor quantum dots Department of Applied Physics, U. Alicante SPAIN Material Science Institute of.

Optimization of Carbon Nanotube Field-Effect Transistors (FETs) Alexandra Ford NSE 203/EE 235 Class Presentation March 5, 2007.

Silvano De Franceschi Laboratorio Nazionale TASC INFM-CNR, Trieste, Italy Orbital Kondo effect in carbon nanotube quantum dots

Laterally confined Semiconductor Quantum dots Martin Ebner and Christoph Faigle.

S. Nanot 1, B. Lassagne 1, B. Raquet 1, J.M. Broto 1 and W. Escoffier 1 J.P. Cleuziou 2, M. Monthioux 2, T. Ondarçuhu 2 R. Avrilier 3, S. Roche 3 Abstract.

Experiments on Luttinger liquid properties of

Introduction to the Kondo Effect in Mesoscopic Systems.

Kondo Effects in Carbon Nanotubes

Single Electron Transistor

Single-electron Devices Speaker: Qiaoyan Yu ECE

Lecture 4 - Coulomb blockade & SET Fulton TA and Dolan GJ, Phys. Rev. Lett. 59 (1987) 109.

Module 3: Part 1 The Field-Effect Transistor (FET)

PY4007 – Quantum wires nanoparticle V1V1 V2V2 0 V C,R 1 C,R 2 C,R 3 A small conductive nanoparticle is connected via 3 tunnelling junctions to voltage.

Lesson 5, Part 2: Electric field induced transport in nanostructures.

Markus Büttiker University of Geneva Haifa, Jan. 12, 2007 Mesoscopic Capacitors.

Quantum Dots Arindam Ghosh. Organization of large number of nanostructures – scalability Utilize natural forces Organic, inorganic and biological systems.

Storey: Electrical & Electronic Systems © Pearson Education Limited 2004 OHT 21.1 Bipolar Transistors  Introduction  An Overview of Bipolar Transistors.

ITR/AP: Simulations of Open Quantum Systems with Application to Molecular Electronics Christopher Roland and Celeste Sagui Department of Physics, NC State.

Philip Kim Department of Physics Columbia University Toward Carbon Based Electronics Beyond CMOS Devices.

Twin Silicon Nanowire Field Effect Transistor (TSNWFET)

Spintronics and Graphene  Spin Valves and Giant Magnetoresistance  Graphene spin valves  Coherent spin valves with graphene.

Towards Utilizing Spontaneous Coherence in Bilayer Graphene for Ultra-Low Power Switches M.J. Gilbert Micro and Nanotechnology Laboratory Department of.

Caltech collaboration for DNA-organized Nanoelectronics The Caltech DNA- nanoelectronics team.

An Introduction to Carbon Nanotubes

Carbon Nanotube Intramolecular Junctions. Nanotubes A graphene sheet with a hexagonal lattice…

„To bunch or not to bunch” Tóvári Endre Journal Club márc. 8. Coherence and Indistinguishability of Single Electrons Emitted by Independent Sources.

Field Effect Transistor. What is FET FET is abbreviation of Field Effect Transistor. This is a transistor in which current is controlled by voltage only.

Scaling of the performance of carbon nanotube transistors 1 Institute of Applied Physics, University of Hamburg, Germany 2 Novel Device Group, Intel Corporation,

Supercurrent through carbon-nanotube-based quantum dots Tomáš Novotný Department of Condensed Matter Physics, MFF UK In collaboration with: K. Flensberg,

Vanderbilt MURI meeting, June 14 th &15 th 2007 Band-To-Band Tunneling (BBT) Induced Leakage Current Enhancement in Irradiated Fully Depleted SOI Devices.

Spin Readout with Superconducting Circuits April 27 th, 2011 N. Antler R. Vijay, E. Levenson-Falk, I. Siddiqi.

12/8/2015A. Ali Yanik, Purdue University1 Spin Dependent Electron Transport in Nanostructures A. Ali Yanik † Dissertation † Department of Physics & Network.

Quantum Noise of a Carbon Nanotube Quantum Dot in the Kondo Regime Exp : J. Basset, A.Yu. Kasumov, H. Bouchiat and R. Deblock Laboratoire de Physique des.

Graphene bipolar heterojunctions SD LG V BG C BG C LG V LG V SD -Density in GLs can be n or p type -Density in LGR can be n’ or p’ type We expect two Dirac.

Introduction to Spintronics

Electrical control over single hole spins in nanowire quantum dots

Sid Nb device fabrication Superconducting Nb thin film evaporation Evaporate pure Nb to GaAs wafer and test its superconductivity (T c ~9.25k ) Tc~2.5K.

Single Electron Transistor (SET)

Singlet-Triplet and Doublet-Doublet Kondo Effect

S. E. Thompson EEL Logic Devices Field Effect Devices –Si MOSFET –CNT-FET Coulomb Blockade Devices –Single Electron Devices Spintronics Resonant.

Single Electron Transistor (SET) CgCg dot VgVg e-e- e-e- gate source drain channel A single electron transistor is similar to a normal transistor (below),

Physics 452 Quantum mechanics II Winter 2011 Karine Chesnel.

SemiSpinNe t Research fueled by: ASRC Workshop on Magnetic Materials and Nanostructures Tokai, Japan January 10 th, 2012 Vivek Amin, JAIRO SINOVA Texas.

Sarvajanik College of Engineering & Tech. Project By: Bhogayata Aastha Chamadiya Bushra Dixit Chaula Tandel Aayushi Guided By: Bhaumik Vaidya.

Chapter 7 Coulomb Blockade and the Single-electron Transistor Lecture given by Qiliang Li.

By ARKA DUTTA ECE HERITAGE INSTITUTE OF TECHNOLOGY, KOLKATA

Charge-Density-Wave nanowires Erwin Slot Mark Holst Herre van der Zant Sergei Zaitsev-Zotov Sergei Artemenko Robert Thorne Molecular Electronics and Devices.

Orbitally phase coherent spintronics

Lecture 7 DFT Applications

RESONANT TUNNELING IN CARBON NANOTUBE QUANTUM DOTS

Coulomb Blockade and Single Electron Transistor

Low energy approach for the SU(N) Kondo model

Full Current Statistics in Multiterminal Mesoscopic Conductors

Spin Switching in Single Wall Carbon Nanotubes Quantized Conduction Resolved Objective: Long coherence lengths in SWCNTs offer unique opportunities for.

500 nm WRITE VOLTAGE 0 V.

NEGATIVE VOLTAGE POSITIVE.

Microelectronics, BSc course

Presentation transcript:

Multi-terminal spin dependent transport in carbon nanotubes Chéryl FEUILLET-PALMA Laboratoire Pierre Aigrain Ecole Normale Supérieure, Paris France Co-workers : T. Delattre, T. Kontos, G. Fève, J.-M. Berroir, D.C. Glattli, B. Plaçais Theory: A. Cottet, M.-S. Choi

V SD H cL < H cR H cR H cL R H Spin signal A magnetic tunnel junction… FET geometry SiO 2 400nm Doped Si V SD VGVG CGCG F F Spin-FET Behaviour Importance of Non-local effects

An unusual magnetic tunnel junction…

Non-local measurement Hysteretic switching in both the current and the non-local voltage Back gate controls both MR and MRV signals similarly to the local case. N-F ConductanceF-N Voltage

Non-local measurement One « side » can be in the Coulomb blockade regime and not the other side. Modulations of the MR in current similar to two probe case dI/dV (µS) T=1.8K

dI/dV (µS) V (µV) Diamond pattern in both non-local voltage and conductance as a function of two gates characteristic of multi-dot physics T = 1.8 K Greyscale of non-local voltage Multi-dot physics and non-local measurement Greyscale of non-local conductance

Multi-dot physics and non-local measurement Side gate controls the non-local MR and MRV on the other side of the structure Back gate fixedSide gate fixed

Spin injection in Carbon Nanotube and spin-fet behaviour Multi-dot physics : quantum coherent spintronics Conclusion Non-local MR and MRV are gated controlled Spin transport qualitatively described in a multiterminal scattering model…