Dual Voltage Design for Minimum Energy Using Gate Slack Kyungseok Kim and Vishwani D. Agrawal ECE Dept. Auburn University Auburn, AL 36849, USA IEEE ICIT-SSST.

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Presentation transcript:

Dual Voltage Design for Minimum Energy Using Gate Slack Kyungseok Kim and Vishwani D. Agrawal ECE Dept. Auburn University Auburn, AL 36849, USA IEEE ICIT-SSST Conference Auburn, March 14, 2011

Low Power Design Using Dual-V dd  Apply V DDH to gates on critical paths to maintain performance, while V DDL to gates on non-critical paths to reduce power:  Clustered Voltage Scaling (CVS) [1]  Extended Clustered Voltage Scaling (ECVS) [2]  Time complexity of two heuristic algorithms [3] :  Worst case O(n 2 ), n is total number of gates in a circuit March 14ICIT-SSST CVSECVS LC FF LCFF FF LCFF VDDH VDDL

Motivation  MILP (Mixed Integer Linear Program) algorithms for dual-V dd design give a global optimal solution, but they cannot be applied to very large circuits due to huge run- time cost [5,6].  Time complexity O(n 2 ) of the published heuristic algorithms for dual-V dd design also may not have affordable run-time for very large modern SoC.  Gate slack analysis has linear time complexity in number of gates in a circuit; this is different from the all- path slack analysis that can be exponential. March 14ICIT-SSST 20113

Gate Slack Delay of the longest path through gate i [4]: D p,i = T PI (i) + T PO (i) March 14ICIT-SSST gate i T PI (i): longest time for an event to arrive at gate i from PI T PI (i) T PO (i) T PO (i): longest time for an event from gate i to reach PO Slack time for gate i: S i = T c – D p,i where T c = Max i { D p,i } for all i

Gate Slack Distribution (C2670) March 14ICIT-SSST Total number of gates = 901 Nominal V dd = 1.2V for PTM 90nm CMOS Critical path delay T c = ps

Upper Slack Time (S u ) March 14ICIT-SSST S u =239ps V DDL Gates S’ u =0 V DDH =1.2V V DDL =0.69V ≥ 1

Lower Slack Time (S l ) March 14ICIT-SSST S l =7ps V DDH Gates V DDH =1.2V V DDL =0.69V ≥ 1

Classification for Positive Slack (C2670) March 14ICIT-SSST S l = 7ps S u = 239ps V DDH Gates V DDH = 1.2V V DDL Gates V DDL = 0.69V Possible V DDL Gates

ISCAS’85 Benchmark (Subtheshold) ** CPU Time : Intel Core 2 Duo 3.06GHz, 4GB RAM March 14ICIT-SSST 20119

March 14ICIT-SSST Selected ISCAS’85 (Nominal) ** Intel Core 2 Duo 3.06GHz, 4GB RAM

Gate Slack Distribution (Nominal)C880 C1908 C6288 C2670 March 14ICIT-SSST Optimized Optimized Optimized Optimized

Conclusion and Future Work  Proposed slack analysis classifies all gates into V DDL, possible V DDL, and V DDH gates.  New slack-based algorithm for dual-V dd has a linear time complexity, O(n), for n gates in the circuit.  The methodology of slack classification can be applied to other power optimization disciplines, such as dual-V th.  A hybrid (MILP + slack analysis) algorithm for dual-V dd design (ECVS) is being investigated to achieve both fast run-time and best optimal solution. March 14ICIT-SSST

[1]K. Usami and M. Horowitz, “Clustered Voltage Scaling Technique for Low- Power Design,” Proc. International Symposium on Low Power Design, 1995, pp. 3–8. [2] K. Usami, M. Igarashi, F. Minami, T. Ishikawa, M. Kanzawa,M. Ichida and K. Nogami, “Automated Low-Power Technique Exploiting Multiple Supply Voltages Applied to a Media Processor,” IEEE Journal of Solid-State Circuits, vol. 33, no. 3, pp. 463–472, [3] D. Chinnery and K. Keutzer, Closing the Power Gap Between ASIC & Custom: Tools and Techniques for Low Power Design. Springer, [4] A. K. Majhi, V. D. Agrawal, J. Jacob and L. M. Patnaik, “Line Coverage of Path Delay Faults,” IEEE Trans. VLSI Systems, vol. 8, no. 5, pp. 610–614. [5] K. Kim and V. D. Agrawal, “True Minimum Energy Design Using Dual Below-Threshold Supply Voltages,” Proc. 24th International Conference on VLSI Design, Jan [6] K. Kim and V. D. Agrawal, “Minimum Energy CMOS Design with Dual Subthreshold Supply and Multiple Logic-Level Gates,” Proc.12th International Symposium on Quality Electronic Design, Mar References March 14ICIT-SSST

March 14ICIT-SSST