Dezső Sima Evolution of Intel’s transistor technology 45 nm – 14 nm October 2014 Vers. 1.0.

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Presentation transcript:

Dezső Sima Evolution of Intel’s transistor technology 45 nm – 14 nm October 2014 Vers. 1.0

Contents 1. Overview of the evolution of Intel’s basic microarchitectures 2. The high-k + metal gate transistor 3. The 22 nm 3D Tri-Gate transistor 4. The 14 nm 3D Tri-Gate transistor

1. Overview of the evolution of Intel’s basic microarchitectures

1. Overview of the evolution of Intel’s basic microarchitectures-1 1. Overview of the evolution of Intel’s basic microarchitectures (Based on [1]) Figure 1.1: Intel ’ s Tick-Tock development model (Based on [1]) Core 2 New Microarch. 65 nm Penryn New Process 45 nm Nehalem New Microarch. 45 nm Westmere New Process 32 nm Sandy Bridge New Microarch. 32 nm Ivy Bridge New Process 22 nm Haswell New Microarchi. 22 nm TOCK TICK TOCK TICKTOCK TICK TOCK 1. gen. 2. gen. 3. gen. 4. gen. 5. gen. Broadwell New Process 14 nm TICK

Evolution of Intel’s process technologies [82] 2014 High K + Metalgate Tri Gate 1. gen. Tri Gate 2. gen. New transistor structures PenrynIvy BridgeBroadwell Related proc. family 1. Overview of the evolution of Intel’s basic microarchitectures-2

14 nm Broadwell SOC yield trend [154] 1. Overview of the evolution of Intel’s basic microarchitectures-3

2. The high-k + metal gate transistor

2. The high-k + metal gate transistor-1 Introduced along with the Penryn family of processors in Figure: Intel ’ s Tick-Tock development model (Based on [1]) Core 2 New Microarch. 65 nm Penryn New Process 45 nm Nehalem New Microarch. 45 nm Westmere New Process 32 nm Sandy Bridge New Microarch. 32 nm Ivy Bridge New Process 22 nm Haswell New Microarchi. 22 nm TOCK TICK TOCK TICKTOCK TICK TOCK 1. gen. 2. gen. 3. gen. 4. gen. 5. gen. Broadwell New Process 14 nm TICK 2. The high-k + metal gate transistor

Figure 3.1.1: Dynamic and static power dissipation trends in chips [21] Sub-threshold = Source-Drain The need to introduce new transistor design [21] 2. The high-k + metal gate transistor-2

Structure of the high-k + metal gate transistors [23] 2. The high-k + metal gate transistor-3

Benefits of the high-k + metal gate transistors [23], [24] 2. The high-k + metal gate transistor-4

3. The 22 nm 3D Tri-Gate transistor

3. The 22 nm 3D Tri-Gate transistor-1 Introduced along with the Ivy Bridge family of processors in Figure: Intel ’ s Tick-Tock development model (Based on [1]) Core 2 New Microarch. 65 nm Penryn New Process 45 nm Nehalem New Microarch. 45 nm Westmere New Process 32 nm Sandy Bridge New Microarch. 32 nm Ivy Bridge New Process 22 nm Haswell New Microarchi. 22 nm TOCK TICK TOCK TICKTOCK TICK TOCK 1. gen. 2. gen. 3. gen. 4. gen. 5. gen. Broadwell New Process 14 nm TICK 3. The 22 nm 3D Tri-Gate transistor-1

The traditional planar transistor [82] 3. The 22 nm 3D Tri-Gate transistor-2

The 22 nm 3D Tri-Gate transistor-2 [82] 3. The 22 nm 3D Tri-Gate transistor-3

The 22 nm Tri-Gate transistor-3 [82] 3. The 22 nm 3D Tri-Gate transistor-4

Switching characteristics of the traditional planar and tri-gate transistors [82] 3. The 22 nm 3D Tri-Gate transistor-5

Gate delay of the traditional planar and tri-gate transistors [82] 3. The 22 nm 3D Tri-Gate transistor-6

Intel’s 22 nm manufacturing fabs [82] 3. The 22 nm 3D Tri-Gate transistor-7

22 nm Ivy Bridge chips on a 300 mm wafer [82] 3. The 22 nm 3D Tri-Gate transistor-8

4. The 14 nm 3D Tri-Gate transistor

4. The 14 nm 3D Tri-Gate transistor-1 Figure: Intel ’ s Tick-Tock development model (Based on [1]) Core 2 New Microarch. 65 nm Penryn New Process 45 nm Nehalem New Microarch. 45 nm Westmere New Process 32 nm Sandy Bridge New Microarch. 32 nm Ivy Bridge New Process 22 nm Haswell New Microarchi. 22 nm TOCK TICK TOCK TICKTOCK TICK TOCK 1. gen. 2. gen. 3. gen. 4. gen. 5. gen. Broadwell New Process 14 nm TICK 4. The 14 nm 3D Tri-Gate transistor-1 Introduced along with the Broadwell family of processors in 2014

14 nm 2 generation Tri-gate transistors with fin improvement [154] 4. The 14 nm 3D Tri-Gate transistor-2

14 nm Broadwell SOC yield trend [154] 4. The 14 nm 3D Tri-Gate transistor-3

Benefits of reducing the feature size [154] 4. The 14 nm 3D Tri-Gate transistor-4

Clock speed vs. leakage power for smaller feature sizes [154] f c > V c V c > I l > D s 4. The 14 nm 3D Tri-Gate transistor-4

Clock speed vs. leakage power for smaller feature sizes and related product sectors [154] 4. The 14 nm 3D Tri-Gate transistor-5