IBD Reactive deposition
Dielectric characterization Refractive index 1.68 ~ saphire
Dielectric breakdown voltage dependence on: - oxide thickness - contact area Composition analysis: metal contamination, stoichiometry (Al:O) Rutherford Backscattering analysis of a IBD deposited Al 2 O 3 film. Total level of metal contamination < 400ppm
Film stress, adhesion 5 m AlN film delamination after disk head slider fabrication. 5 m sputtered AlN Dual-Stripe disk head INESC (1998)
Vacuum systems
Nordiko 3600 IBD system donation from Seagate (Ireland)
Rotary pumps Turbomolecular pumps Cryogenic pumps - 1 st stage pumps - ultimate pressure ~10 -4 Torr - Requires a purge vapor line - 2nd stage pumps - ultimate pressure ~ Torr - requires a backing pump - 2nd stage pumps - ultimate pressure ~ Torr Momentum transfer from the disks to the gas molecules. Separation rotor to disks ~ free mean path (molecular regime)
Pressure increase lower filament temperature Lower resistance Ultimate pressure detection ~ Torr Ultimate pressure detection ~10 -7 Torr Ultimate pressure detection ~10 -4 Torr
Bibliography -Nanoelectronics and information technology – Advanced Electronic Materials and Novel Devices, Chap.8, Rainer Waser (Ed.), Wiley-VCH (2003) - VLSI Technology, S.M.Sze, McGraw-Hill International Editions - Sputtering: user reference guide – Nordiko internal report - Spin Electronics - Chap.13, M.Ziese and M.J.Thornton (Ed.), Lecture Notes in Physics, Springer- Verlag -Tecnologia de Vácuo, A.M.C.Moutinho, M.E.F.Silva, M.A.Cunha, Univ.Nova de Lisboa (Ed.) - Solid State Technology, p.35-40, January 2003
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