POTENTIAL APPLICATIONS OF SPINTRONICS Dept. of ECECS, Univ.of Cincinnati, Cincinnati, Ohio 45221 M.Cahay February 4, 2005.

Slides:



Advertisements
Similar presentations
Gate Control of Spin Transport in Multilayer Graphene
Advertisements

Spintronics with topological insulator Takehito Yokoyama, Yukio Tanaka *, and Naoto Nagaosa Department of Applied Physics, University of Tokyo, Japan *
Materials Research Science and Engineering Center William H. Butler University of Alabama-Tuscaloosa, DMR Update: January, 27, 2005 Commercialization.
The resistivity of bulk ferromagnetic metals depends on the angle between the magnetization and the electric current. This phenomenon was discovered by.
Spintronics The Search for Effective Spin Polarized Current Injection Into Semiconductors Presented by Alan Gabel Boston University Introduction to Solid.
Dynamical response of nanoconductors: the example of the quantum RC circuit Christophe Mora Collaboration with Audrey Cottet, Takis Kontos, Michele Filippone,
Topics in Condensed Matter Physics Lecture Course for graduate students CFIF/Dep. Física Spin-dependent transport theory Vitalii Dugaev Winter semester:
D-wave superconductivity induced by short-range antiferromagnetic correlations in the Kondo lattice systems Guang-Ming Zhang Dept. of Physics, Tsinghua.
Diluted Magnetic Semiconductors Diluted Magnetic Semoconductor (DMS) - A ferromagnetic material that can be made by doping of impurities, especially transition.
Spintronics and Magnetic Semiconductors Joaquín Fernández-Rossier, Department of Applied Physics, University of Alicante (SPAIN) Alicante, June
Spintronics Research Center, AIST, Tsukuba, Japan Spin rotation after a spin-independent scattering. Spin properties of an electron gas in a solid Journal.
Magnetoresistance of tunnel junctions based on the ferromagnetic semiconductor GaMnAs UNITE MIXTE DE PHYSIQUE associée à l’UNIVERSITE PARIS SUD R. Mattana,
Spin-orbit effects in semiconductor quantum dots Departament de Física, Universitat de les Illes Balears Institut Mediterrani d’Estudis Avançats IMEDEA.
Chaos and interactions in nano-size metallic grains: the competition between superconductivity and ferromagnetism Yoram Alhassid (Yale) Introduction Universal.
Spin transport in spin-orbit coupled bands
Magnetic sensors and logic gates Ling Zhou EE698A.
Optical study of Spintronics in III-V semiconductors
Spin Hall Effect induced by resonant scattering on impurities in metals Peter M Levy New York University In collaboration with Albert Fert Unite Mixte.
1 Motivation: Embracing Quantum Mechanics Feature Size Transistor Density Chip Size Transistors/Chip Clock Frequency Power Dissipation Fab Cost WW IC Revenue.
In Memory of H. C. Siegmann - the father of modern spin physics Joachim Stöhr SLAC.
Spintronic Devices and Spin Physics in Bulk Semiconductors Marta Luengo-Kovac June 10, 2015.
Spintronics and Graphene  Spin Valves and Giant Magnetoresistance  Graphene spin valves  Coherent spin valves with graphene.
Study on the Diluted Magnetic Semiconductors QSRC, Dongguk University
AN INTRODUCTION TO SPINTRONICS
Spin-dependent transport in the presence of spin-orbit interaction L.Y. Wang a ( 王律堯 ), C.S. Tang b and C.S. Chu a a Department of Electrophysics, NCTU.
G. S. Diniz and S. E. Ulloa Spin-orbit coupling and electronic transport in carbon nanotubes in external fields Department of Physics and Astronomy, Ohio.
NAN ZHENG COURSE: SOLID STATE II INSTRUCTOR: ELBIO DAGOTTO SEMESTER: SPRING 2008 DEPARTMENT OF PHYSICS AND ASTRONOMY THE UNIVERSITY OF TENNESSEE KNOXVILLE.
Getting FM in semiconductors is not trivial. Recall why we have FM in metals: Band structure leads to enhanced exchange interactions between (relatively)
Half-metallic ferromagnets: an overview of the theory
Magnetism in ultrathin films W. Weber IPCMS Strasbourg.
The Story of Giant Magnetoresistance (GMR)
Electronic and Magnetic Structure of Transition Metals doped GaN Seung-Cheol Lee, Kwang-Ryeol Lee, Kyu-Hwan Lee Future Technology Research Division, KIST,
Semiconductor and Graphene Spintronics Jun-ichiro Inoue Nagoya University, Japan Spintronics applications : spin FET role of interface on spin-polarized.
Elshan Akhadov Spin Electronics QuarkNet, June 28, 2002 Peng Xiong Department of Physics and MARTECH Florida State University.
Quantum Confinement in Nanostructures Confined in: 1 Direction: Quantum well (thin film) Two-dimensional electrons 2 Directions: Quantum wire One-dimensional.
Daresbury Laboratory Ferromagnetism of Transition Metal doped TiN S.C. Lee 1,2, K.R. Lee 1, K.H. Lee 1, Z. Szotek 2, W. Temmerman 2 1 Future Technology.
SPINTRONICS …… A QUANTUM LEAP PRESENTED BY: DEEPAK 126/05.
Spintronics. Properties of Electron Electron has three properties. Charge Mass Spin.
Drude weight and optical conductivity of doped graphene Giovanni Vignale, University of Missouri-Columbia, DMR The frequency of long wavelength.
Quantum Computers by Ran Li.
Ferromagnetic Quantum Dots on Semiconductor Nanowires
12/8/2015A. Ali Yanik, Purdue University1 Spin Dependent Electron Transport in Nanostructures A. Ali Yanik † Dissertation † Department of Physics & Network.
Monday, January 31, 2011 A few more instructive slides related to GMR and GMR sensors.
Introduction to Spintronics
LaBella Group cnse.albany.edu Towards an Atomic Scale Understanding of Spin Polarized Electron Transport Towards.
Single Molecular Magnets
전이금속이 포함된 GaN의 전자구조 및 자기적 특성해석
Spin filtering in mesoscopic systems Shlomi Matityahu, Amnon Aharony, Ora Entin-Wohlman Ben-Gurion University of the Negev Shingo Katsumoto University.
S. E. Thompson EEL Logic Devices Field Effect Devices –Si MOSFET –CNT-FET Coulomb Blockade Devices –Single Electron Devices Spintronics Resonant.
Nano and Giga Challenges in Microelectronics, Cracow, 2004 Spin Injection in Semiconductor Nanostructures Alexey Toropov Ioffe Institute, St.Petersburg,
G. Kioseoglou SEMICONDUCTOR SPINTRONICS George Kioseoglou Materials Science and Technology, University of Crete Spin as new degree of freedom in quantum.
First Principle Design of Diluted Magnetic Semiconductor: Cu doped GaN
Spin-orbit interaction in semiconductor quantum dots systems
Submitted To: Presented By : Dr R S Meena Shailendra Kumar Singh Mr Pankaj Shukla C.R. No : 07/126 Final B. Tech. (ECE) University College Of Engineering,
Preliminary doping dependence studies indicate that the ISHE signal does pass through a resonance as a function of doping. The curves below are plotted.
What are the magnetic heterolayers good for Basic components of modern spintronic devices Conventional electronics has ignored the spin of the electron.
Quantum Computers By Ryan Orvosh.
Spintronics in quantum wires Physics Department Korea University Seoul (Korea) Llorenç Serra home institution Physics Department, University of the Balearic.
Thin Film Magnetism Group, Cavendish Laboratory, University of Cambridge W. S. Cho and J. A. C. Bland Cavendish Laboratory, University of Cambridge, UK.
Thermal and electrical quantum Hall effects in ferromagnet — topological insulator — ferromagnet junction V. Kagalovsky 1 and A. L. Chudnovskiy 2 1 Shamoon.
SPINTRONICS Submitted by: K Chinmay Kumar N/09/
Kondo Effect Ljubljana, Author: Lara Ulčakar
Department of Electronics
Spin Electronics Peng Xiong Department of Physics and MARTECH
Spin-orbit interaction in a dual gated InAs/GaSb quantum well
EE 315/ECE 451 Nanoelectronics I
The route from fundamental science to technological innovation
Spintronics By C.ANIL KUMAR (07AG1A0411).
Presented by: Bc. Roman Hollý
Information Storage and Spintronics 18
Presentation transcript:

POTENTIAL APPLICATIONS OF SPINTRONICS Dept. of ECECS, Univ.of Cincinnati, Cincinnati, Ohio M.Cahay February 4, 2005

Outline A Little quBit of History Success Story: Giant Magnetoresistance Spin Valve Requirements for spintronics Zeeman, Spin-Orbit Effects Injection, Manipulation, Detection Magnetoresistive biosensors Conclusions

Brief History Spintronics-Magnetoelectronics Stern-Gerlach Experiment (Early 1920s) spin concept – 1920s Pauli-Dirac Equation (Late 1920s) 1980s… : Study of Mesoscopic systems – Landauer- Buttiker Formalism Breakdown of Moore’s Law? 1988: Giant Magnetoresistance in Magnetic multilayers, magnetic read heads, magnetic sensors, spin valves.

Brief History Spintronics-Magnetoelectronics 1990: SPINFET proposal by Datta and Das 1990s: Lots of work on Ferromagnet/ (metal, semiconductor, superconductor) interfaces. DMS – diluted magnetic semiconductors (ZnMnSe, GaMnAs,GaMnN,…) 1985: David Deutsch: Quantum Mechanical Turing Machine

Brief History Spintronics-Magnetoelectronics 1995: P.Schor’s algorithm for fast factorization of large integers (cryptography) 1997: L.K.Grover’s search algorithm for efficient search of large database 1990s: Lots of proposal for implementation of qubits and quantum computers (NMR, Ion trap, quantum dot) Search in Spintronics and Quantum Computing will continue to feed on each other

SIA ROADMAP - Moore’s Law

Requirements for Spintronic Integrated Circuits Simple device structure for high degree of integration and high process yield. Large magnetocurrent for high speed operation High transconductance for high speed operation High amplification capability (V, I, and/or power) Small power delay product and small off-current for low power dissipation

Preliminaries: Stoner Model Exchange Energy E(k) k Ferromagnetic Contact

GMR Read Head

RAM with GMR Elements

Preliminiaries: Zeeman Effect

Preliminaries:Spin-Orbit Interaction

Ferromagnet/Sm Interface

Contact Selection Ferromagnetic contact (Fe, Ni, Co) HMF candidates: Heusler Materials Dilute Magnetic Semiconductors (GaMnAs, ZnMnSe, ZnMnTe,GaMnN…) More recently, wide band gap ferromagnetic semiconductors and oxides S.J. Pearson et al., “Wide band gap ferromagnetic Semiconductors and oxides”, Journal of Applied Physics, Vol.93, pp.1-13 (2003)

Ferromagnetic contact/semiconductor interfaces How good are they? Why Ferromagnetic Contacts (Fe, Ni, Co)?  Because Curie Temperature Is Above Room Temperature! Hence, devices could work at 300k.  FM are good source of spin polarized electron sources (Stoner model) Theoretical Predictions  Classical diffusion eq. predicts very small spin injection efficiency across Fe/Sm interface (G. Schmidt et al. PRB 62,R4790 (2000). Main reason: Large conductivity mismatch between the two materials.  Not so fast! E.I.Rashba (Phys.Rev.B 62 R16267 (2000)). “If you can adjust interface resistance by using a tunneling barrier, the situation can improved drastically!”.

Ferromagnetic contact/semiconductor interfaces How good are they? Rashba's prediction was confirmed experimentally using (a) Schottky barriers H.J.Zhu et al., PRL 87, (2001) (Fe/GaAs), 2% efficiency A.T.Hanbicki et al, APL 80, 1240 (2002) A.T.Hanbicki et al, APL 82, 4092 (2003), (Fe/AlGaAs), 33% efficiency (b) Thin Metal Oxides V.F. Motsynyi et al, APL 81, 265 (2002) T. Manago and H. Akinaga, APL 81, 694 (2002) (c) AlAs barriers S.H.Chun et al, PRB 66, R (2002).

Spin Relaxation Mechanisms The Elliot-Yafet Scattering Mechanism As a result of the SO-contribution to the crystal Hamiltonian, conduction-band states of some semiconductors are not spin eigenstates. This leads to the possibility for spin-flip scattering even for spin independent impurity scattering (due to Coulombic scattering for instance). For the same reason, spin-independent electron-electron scattering can also cause spin-flip transitions

DYAKONOV-PEREL SPIN RELAXATION IN A QUANTUM WIRE DRESSELHAUS HAMILTONIAN RASHBA HAMILTONIAN y z x x

RAMSAUER (FABRY-PERROT) RESONANCES

ONE REPULSIVE IMP. 300 angs from left contact INFLUENCE OF SCATTERING STRENGTH

Magnetoresistive-Based Biosensors D.L.Graham et al, Trends in biotechnology vol.22, 455 (2004)

Conclusions Spintronics has already some success stories! (giant magnetoresistance/spin valve) Quantum Computing: Too early to tell! Other potential: Spintronics & organics, Spintronics & Biosensors, Magnetic Sensors. Want to know more about it? Buy the book: “Introduction to Spintronics”….in 2006.