Effect of working pressure and gas flow rate on RF discharge Discharge gas: Argon; Forwarded RF power: 750 W; Substrate biased voltage: -200 V.

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Presentation transcript:

Effect of working pressure and gas flow rate on RF discharge Discharge gas: Argon; Forwarded RF power: 750 W; Substrate biased voltage: -200 V

Effect of working pressure and gas flow rate on RF discharge (Cont’d) Discharge gas: Argon; Forwarded RF power: 750 W; Substrate biased voltage: -200 V

Effect of substrate biased voltage on RF discharge Discharge gas: Argon; Forwarded RF power: 750 W; Working pressure: 3.0 mTorr

Effect of substrate biased voltage on RF discharge (Cont’d) Discharge gas: Argon; Forwarded RF power: 750 W; Working pressure: 3.0 mTorr

Effect of forwarded RF power on RF discharge Discharge gas: Argon; Substrate biased voltage: -200 V; Working pressure: 3.0 mTorr

Effect of forwarded RF power on RF discharge (Cont’d) Discharge gas: Argon; Substrate biased voltage: -200 V; Working pressure: 3.0 mTorr