DC Characteristics of a CMOS Inverter A complementary CMOS inverter consists of a p-type and an n-type device connected in series. The DC transfer characteristics.

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DC Characteristics of a CMOS Inverter

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DC Characteristics of a CMOS Inverter A complementary CMOS inverter consists of a p-type and an n-type device connected in series. The DC transfer characteristics of the inverter are a function of the output voltage (V out ) with respect to the input voltage (V in ). The MOS device first order Shockley equations describing the transistors in cut-off, linear and saturation modes can be used to generate the transfer characteristics of a CMOS inverter. Plotting these equations for both the n- and p-type devices produces the traces below.

IV Curves for nMOS

PMOS IV Curves

DC Characteristics of a CMOS Inveter The DC transfer characteristic curve is determined by plotting the common points of V gs intersection after taking the absolute value of the p-device IV curves, reflecting them about the x- axis and superimposing them on the n-device IV curves. We basically solve for V in(n-type) = V in(p-type) and I ds(n-type) =I ds(p-type) The desired switching point must be designed to be 50 % of magnitude of the supply voltage i.e. V DD /2. Analysis of the superimposed n-type and p-type IV curves results in five regions in which the inverter operates. Region A occurs when 0 leqV in leq V t(n-type). –The n-device is in cut-off (I dsn =0 ). –p-device is in linear region, –I dsn = 0 therefore -I dsp = 0 –V dsp = V out – V DD, but V dsp =0 leading to an output of V out = V DD. Region B occurs when the condition V tn leq V in le V DD /2 is met. –Here p-device is in its non-saturated region Vds neq 0. –n-device is in saturation Saturation current Idsn is obtained by setting V gs = V in resulting in the equation:

CMOS Inverter DC Characteristics

CMOS Inverter Transfer Characteristics In region B I dsp is governed by voltages V gs and V ds described by: Region C has that both n- and p- devices are in saturation. Saturation currents for the two devices are: Region D is defined by the inequality p-device is in saturation while n- device is in its non-saturation region. Equating the drain currents allows us to solve for Vout. (See supplemental notes for algebraic manipulations).

CMOS Inverter Static Charateristics In Region E the input condition satisfies: The p-type device is in cut-off: I dsp =0 The n-type device is in linear mode V gsp = V in –V DD and this is a more positive value compared to V tp. V out = 0 nMOS & pMOS Operating points A C B D E V tp V tn VDDVDD 0 V DD /2V DD +V t p VDDVDD Both in sat nMOS in sat pMOS in sat Output Voltage V out =V in -V tp V out =V in -V tn