半導體量測技術 Semiconductor Materials and Device Characterization Topic 8: physical characterization of semiconductor Instructor: Dr. Yi-Mu Lee Department of.

Slides:

Advertisements

Similar presentations

MICROWAVE FET Microwave FET : operates in the microwave frequencies

Advertisements

Display Systems and photosensors (Part 2)

Fig_18_04 fig_18_04.

Lecture #5 OUTLINE Intrinsic Fermi level Determination of E F Degenerately doped semiconductor Carrier properties Carrier drift Read: Sections 2.5, 3.1.

Ion Beam Analysis techniques:

Chapter 18: Electrical Properties

Latent Noise in Schottky Barrier MOSFET

Electrical Techniques MSN506 notes. Electrical characterization Electronic properties of materials are closely related to the structure of the material.

Study of sputtering on thin films due to ionic implantations F. C. Ceoni, M. A. Rizzutto, M. H. Tabacniks, N. Added, M. A. P. Carmignotto, C.C.P. Nunes,

Semiconductor Materials and Device Characterization

半導體量測技術 Semiconductor Materials and Device Characterization Topic 2: measurement of doping profile Instructor: Dr. Yi-Mu Lee Department of Electronic Engineering.

Semiconductor Materials and Device Characterization

number of coulombs in a mole mass of liberated substance.

Studies of Minority Carrier Recombination Mechanisms in Beryllium Doped GaAs for Optimal High Speed LED Performance An Phuoc Doan Department of Electrical.

Advanced Semiconductor Physics ~ Dr. Jena University of Notre Dame Department of Electrical Engineering SIZE DEPENDENT TRANSPORT IN DOPED NANOWIRES Qin.

半導體量測技術 Semiconductor Materials and Device Characterization Topic 5: oxide trapped charge and poly-depletion effect in MOSFET Instructor: Dr. Yi-Mu Lee.

半導體量測技術 Semiconductor Materials and Device Characterization Topic 6: charge pumping technique and HS experiment Instructor: Dr. Yi-Mu Lee Department of.

Rutherford Backscattering Spectrometry

Section 4: Diffusion part 2

半導體量測技術 Semiconductor Materials and Device Characterization Topic 4: resistance and effective channel length in MOSFET Instructor: Dr. Yi-Mu Lee Department.

Quantum Dots: Confinement and Applications

Slide # 1 SPM Probe tips CNT attached to a Si probe tip.

Chapter 8 Ion Implantation

Introduction to Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) Chapter 7, Anderson and Anderson.

FRANK LABORATORY OF NEUTRON PHYSICS ION BEAM ANALYSIS STANCIU-OPREAN LIGIA SUPERVISOR DR. KOBZEV ALEXANDER.

EXAMPLE 6.1 OBJECTIVE Fp = 0.288 V

Post Anneal Solid State Regrowth

© 2012 Eric Pop, UIUCECE 340: Semiconductor Electronics ECE 340 Lecture 9 Temperature Dependence of Carrier Concentrations L7 and L8: how to get electron.

Modeling, Characterization and Design of Wide Bandgap MOSFETs for High Temperature and Power Applications UMCP: Neil Goldsman Gary Pennington(Ph.D) Stephen.

Grace Xing---EE30357 (Semiconductors II: Devices) 1 EE 30357: Semiconductors II: Devices Lecture Note #19 (02/27/09) MOS Field Effect Transistors Grace.

Comparative Analysis of the RF and Noise Performance of Bulk and Single-Gate Ultra-thin SOI MOSFETs by Numerical Simulation M.Alessandrini, S.Eminente,

Special Issues on Nanodevices1 Special Topics in Nanodevices 3 rd Lecture: Nanowire MOSFETs Byung-Gook Park.

Lecture 18 OUTLINE The MOS Capacitor (cont’d) – Effect of oxide charges – V T adjustment – Poly-Si gate depletion effect Reading: Pierret ; Hu.

Conductors – many electrons free to move

Novel Metal-Oxide-Semiconductor Device

Basics of Ion Beam Analysis

EE105 - Spring 2007 Microelectronic Devices and Circuits

Rutherford Backscattering Spectrometry (RBS)

MOSFET Current Voltage Characteristics Consider the cross-sectional view of an n-channel MOSFET operating in linear mode (picture below) We assume the.

Questions/Problems on SEM microcharacterization Explain why Field Emission Gun (FEG) SEM is preferred in SEM? How is a contrast generated in an SEM? What.

CHAPTER 6: MOSFET & RELATED DEVICES CHAPTER 6: MOSFET & RELATED DEVICES Part 2.

Waveguide Ge-PD Simulation

Neutron Transmutation Doping Conceptual Design Dr. Mosa Othman Silicon doping facility manger Egyptian Second Research Raector (ETRR-2) Atomic Energy Authority.

Principles of Semiconductor Devices ( 집적 회로 소자 ) Principles of Semiconductor Devices ( 집적 회로 소자 ) Hanyang University Division of Electronics & Computer.

Carrier generation and recombination A sudden increase in temperature increases the generation rate. An incident burst of photons increases the generation.

EE130/230A Discussion 10 Peng Zheng.

PHYSICAL ELECTRONICS ECX 5239 PRESENTATION 01 PRESENTATION 01 Name : A.T.U.N Senevirathna. Reg, No : Center : Kandy.

Chapter6. Carrier Transport Drift Definition-visualization Drift : Charged particle motion in response to an applied electric field.

Lecture 18 OUTLINE The MOS Capacitor (cont’d) Effect of oxide charges

Lecture 4 OUTLINE Semiconductor Fundamentals (cont’d)

“Semiconductor Physics”

積體電路元件與製程半導體物理半導體元件 PN junction CMOS 製程 MOS 元件.

A p-n junction is not a device

6.3.3 Short Channel Effects When the channel length is small (less than 1m), high field effect must be considered. For Si, a better approximation of field-dependent.

Chapter 8 Ion Implantation

Chapter 18: Electrical Properties

Professor Ronald L. Carter

Lecture 4 OUTLINE Semiconductor Fundamentals (cont’d)

Basic Semiconductor Physics

EE 5340 Semiconductor Device Theory Lecture 26 - Fall 2009

Introduction to Materials Science and Engineering

Lecture 18 OUTLINE The MOS Capacitor (cont’d) Effect of oxide charges

Characterization of Thin Films

EXAMPLE 7.1 BJECTIVE Determine the total bias current on an IC due to subthreshold current. Assume there are 107 n-channel transistors on a single chip,

Lecture 1 OUTLINE Basic Semiconductor Physics Reading: Chapter 2.1

Semiconductor Device Modeling & Characterization Lecture 21

MOSCAP Non-idealities

Ion Beam Analysis (IBA)

Beyond Si MOSFETs Part 1.

Chapter 6 Carrier Transport.

Presentation transcript:

半導體量測技術 Semiconductor Materials and Device Characterization Topic 8: physical characterization of semiconductor Instructor: Dr. Yi-Mu Lee Department of Electronic Engineering National United University

Topics: Ch. 10 in D. K. Schroder Physical characterization: Rutherford Backscattering Spectroscopy (RBS) p. 689~692 in D. K. Schroder Application examples

D. K. Schroder, p. 690

(a)1/10 6 of incident atoms: elastic collision and backscattered at various angles (b)Leaving sample surface with reduced energy Fig. from D. K. Schroder, p. 690

Question: suppose M 2 is very heavy, is E 1 smaller or larger? D. K. Schroder, p. 690~691

From (10.21) and (10.22):

*The yield is not to scale on this figure. Order and Peak height D. K. Schroder, p. 692

D. K. Schroder, p.691

D. K. Schroder, p. 695

Example: Draw yield vs. E for A, B and Si atoms: Mass: A > Si > B Si: substrate A and B: narrow bands of impurities

Topic summary of this class Topic 1: resistivity and Four point Probe Topic 2: measurement of doping profile Topic 3: parameter measurements of SPICE model Topic 4: resistance and effective channel length in MOSFET Topic 5: oxide trapped charge and poly-depletion effect in MOSFET Topic 6: charge pumping technique and HS experiment Topic 7: time-of-flight technique and carrier mobility Topic 8: physical characterization of semiconductor