Silicon makes up 25.7% of the Earth's crust. Most of it is in the form of silicon dioxide, also known as silica: Sand, amethyst, agate, quartz, rock crystal,

Slides:

Advertisements

Similar presentations

FABRICATION PROCESSES

Advertisements

Selected Problems Tutorial # 3

ECE G201: Introductory Material Goal: to give you a quick, intuitive concept of how semiconductors, diodes, BJTs and MOSFETs work –as a review of electronics.

Mikhail Rybin Euler School March-April 2004 Saint Petersburg State University, Ioffe Physico-Technical Institute Photonic Band Gap Structures.

Budapest University of Technology and Economics Department of Electron Devices Microelectronics, BSc course Basic semiconductor physics.

Semiconductor Devices 21

Ch.1 Introduction Optoelectronic devices: - devices deal with interaction of electronic and optical processes Solid-state physics: - study of solids, through.

The silicon substrate and adding to it—Part 1  Explain how single crystalline Si wafers are made  Describe the crystalline structure of Si  Find the.

Semiconductor Device Physics Lecture 3 Dr. Gaurav Trivedi, EEE Department, IIT Guwahati.

Course: ETE 107 Electronics 1 Course Instructor: Rashedul Islam

Chapter 1 The Crystal Structure of Solids Describe three classifications of solids— amorphous, polycrystalline, and single crystal. Discuss the concept.

Lecture #3 OUTLINE Band gap energy Density of states Doping Read: Chapter 2 (Section 2.3)

MSE-630 Dopant Diffusion Topics: Doping methods Resistivity and Resistivity/square Dopant Diffusion Calculations -Gaussian solutions -Error function solutions.

P and n type semiconductors. Semiconductors Semiconductors are also referred to as metalloids. Metalloids occur at the division between metals and non-metals.

Advanced Higher Chemistry

PV Panels and P N Junctions How PV Panels work Or An Introduction to the World of Microelctronics.

Copyright © Houghton Mifflin Company. All rights reserved. 16a–1 Figure 16.31: Two-dimensional representations of (a) a quartz crystal and (b) a quartz.

Band Theory & Optical Properties in solids

SEMICONDUCTORS.

MSE-630 Gallium Arsenide Semiconductors. MSE-630 Overview Compound Semiconductor Materials Interest in GaAs Physical Properties Processing Methods Applications.

ECE685 Nanoelectronics – Semiconductor Devices Lecture given by Qiliang Li.

Katedra Experimentálnej Fyziky Bipolar technology - the size of bipolar transistors must be reduced to meet the high-density requirement Figure illustrates.

The Devices: Diode.

Basic Crystallography 26 January 2015 Three general types of solids 1. Amorphous ― with order only within a few atomic and molecular dimensions (Fig. (a))

Vypracoval: Adam Bábík

Copyright © Houghton Mifflin Company. All rights reserved. 16a–1 Figure 16.31: Two-dimensional representations of (a) a quartz crystal and (b) a quartz.

1 SEMICONDUCTORS Introduction to Semiconductors. 2 SEMICONDUCTORS WE LIVE IN THE AGE OF INFORMATION AS WELL AS THE AGE OF MINIATURIZED ELECTRONICS. HOW.

Chapter 1 : Diodes Gopika Sood Assistant Professor in Physics

Semiconductor Fundamentals. Objectives –After completing this unit, the student should be able to: Identify materials that act as semiconductors. Define.

Materials Conductive materials – valence band overlaps the conduction band Conductive materials – valence band overlaps the conduction band Non conductive.

LW4 Lecture Week 4-1 Heterojunctions Fabrication and characterization of p-n junctions 1.

SEMINAR ON IC FABRICATION MD.ASLAM ADM NO:05-125,ETC/2008.

Implantation of N-O in Diamond

ISAT 436 Micro-/Nanofabrication and Applications Crystals and Crystal Growth D. J. Lawrence James Madison University.

English ability would save life English ability gives you opportunities e.g. Job opening in TSMC

Integrated Circuit Devices Professor Ali Javey Summer 2009 Semiconductor Fundamentals.

Outline of lectures: Day 1-2: Research on the physics of nitride semiconductors Fundamentals of semiconductor physics Research on nitrides Day 3-4: Research.

SILICON DETECTORS PART I Characteristics on semiconductors.

Solar Energy Solar Energy and NASA NASA developed solar cells for the space program NASA developed solar cells for the space program Used to recharge.

Solar panels A solar panel is made up of photovoltaic cells. A photovoltaic cell converts light energy into electricity. A conductor is something that.

Solar Cells Solar cells are made of two types of silicon Normal silicon has no free electrons N-type silicon has been doped with phosphorus to give it.

日期：指導老師：林克默、黃文勇學生：陳立偉 1. Outline 1.Introduction 2.Experimental 3.Result and Discussion 4.Conclusion 2.

1 Prof. Ming-Jer Chen Department of Electronics Engineering National Chiao-Tung University October 1, 2013 DEE4521 Semiconductor Device Physics Lecture.

Free Electron Model for Metals

Erie H. Moralesa), M. Batzillb) and U. Diebolda)

Dr. Nasim Zafar Electronics 1 EEE 231 – BS Electrical Engineering Fall Semester – 2012 COMSATS Institute of Information Technology Virtual campus Islamabad.

Solar panels are pretty expensive, but they are good to save money on electricity. They take something from the sun and do something with it to make it.

UNIT- IV SOLID STATE PHYSICS. 1)Electrical conductivity in between conductors & insulators is a) high conductors b) low conductors c) Semiconductors d)

Crystalline Solids, Band Theory, and Doping

Optical Density of Ge Implanted Type III Silica of various concentrations Optical Density of Ge Implanted Type IV Silica of various concentrations Optical.

Solar Cell Semiconductor Physics

1 Semiconductor Devices  Metal-semiconductor junction  Rectifier (Schottky contact or Schottky barrier)  Ohmic contact  p – n rectifier  Zener diode.

Thin Film Deposition. Types of Thin Films Used in Semiconductor Processing Thermal Oxides Dielectric Layers Epitaxial Layers Polycrystalline Silicon Metal.

President UniversityErwin SitompulSDP 3/1 Dr.-Ing. Erwin Sitompul President University Lecture 3 Semiconductor Device Physics

Taxonomic Key For the Forms of Quartz 1a) Mineral has six-side hexagonal crystals and visible crystal facets 1b) Mineral has no visible crystal facets.

Review of Semiconductor Devices

Basic Planar Processes

Review of Semiconductor Physics, PN Junction Diodes and Resistors

“Semiconductor Physics”

SOLAR PANELS Photovoltaic cell Photovoltaic

Read: Chapter 2 (Section 2.3)

EECS143 Microfabrication Technology

Solar panels are pretty expensive, but they are good to save money on electricity. They take something from the sun and do something with it to make it.

Basic Semiconductor Physics

Materials Conductive materials – valence band overlaps the conduction band Non conductive materials – valence band is separated from conduction.

SOLAR PANELS Photovoltaic cell Photovoltaic

Materials Conductive materials – valence band overlaps the conduction band Non conductive materials – valence band is separated from conduction.

Lecture 1 OUTLINE Basic Semiconductor Physics Reading: Chapter 2.1

Materials Conductive materials – valence band overlaps the conduction band Non conductive materials – valence band is separated from conduction.

Presentation transcript:

Silicon makes up 25.7% of the Earth's crust. Most of it is in the form of silicon dioxide, also known as silica: Sand, amethyst, agate, quartz, rock crystal, chalcedony, flint, jasper, and opal Diamond cubic crystal structure.

Czochralski single-crystal growth process Bridgman-Stockbarger technique

less than Torr ~ Torr 3. W.T. Tsang, “From Chemical Vapor Epitaxy to Chemical Beam Epitaxy”. J. Cryst. Growth. 95, 121 (1989)

Silicon band gap energy at 300 K = 1.12 eV = 1107nm

Phonon (lattice) scattering. Angle between and planes is 54.7 degree plane

Silicon band gap energy at 300 K = 1.12 eV = 1107nm

Russell Ohl in 1939, discovered the PN barrier and is generally recognized for patenting the modern solar cell (US Patent , "Light sensitive device"). p side is higher doped. Donors: group V Phosphorus (P) Arsenic (As) Acceptors: group III Boron (B) Aluminium (Al)

Dose and energy requirements of major ion implantation applications (species shown roughly in order of decreasing usage). D=D0*exp(-E A /kT) ElementD [cm 2 /s] (RT)D [cm 2 /s] (1.3kK) B E E-13