Facilities Include: 2 MV Tandem accelerator Rapid elemental depth profile techniques include RBS, EBS, ERD, PIXE and NRD Sub-micro size microbeam with.

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Presentation transcript:

Facilities Include: 2 MV Tandem accelerator Rapid elemental depth profile techniques include RBS, EBS, ERD, PIXE and NRD Sub-micro size microbeam with full scanning capability Advanced sample goniometer for channelling spectroscopy Automatic data analysis system External (in air) microbeam for vacuum sensitive samples Future Developments: Just installed state-of-the-art accelerator Developing routine, accurate, cheap characterisation Plan to extend capabilities by installing: Nano ion beam for nano analysis and proton beam lithography Vertical ion beam for liquid and biological applications Continue and expand interaction with both University and Industrial groups Light from silicon – LEDs at room temperature (patent) Spin-out company formed: Si- Light Technologies Ion beam synthesis of superconducting MgB 2 (patent) Elevated temperature implants, for increased thermal stability and larger process window, for the production of high resistivity layers in GaAs Control of transient enhanced diffusion of boron in silicon (2 patents) Room temperature formation of ultra-thin (2nm) conducting silicides DataFurnace for ion beam analysis (sold under license) Centre supported £48M of grants over 4 years Queens Anniversary Prize for Further and Higher Education Si, SiGe, SOI for CMOS, modelling, TCAD (Philips, Applied Materials, Silvaco, ISE) Modeling & Simulation - energetic molecule & cluster surface interactions Ultra-thin silicides for displays and CMOS (Philips/LG) Virtual substrates: ion beam synthesis, layer transfer Photonics for silicon laser (and LED), integrated optics, III-V compounds (LEDs and lasers) Development of ion beam analysis techniques and applications for Cultural Heritage and the Environment Proton beam lithography for high aspect ratio and buried structures Application of Ion Beams to biomedical applications Successes New Projects Industrial Users of the IBC include: QinetiQ Applied Materials Filtronic e2v Technologies PRP Optoelectronics Bookham Technology Philips Research Labs Canberra FOM-AMOLF NL CRP - Belgium MATS UK Coherent - Germany Cascade Scientific Mesaphotonics LG/Philips ABB – Switzerland Zetec EIF Gresham Scientific Aonex Technologies - USA Academic Users of the IBC include: KCL Leeds Glasgow ICSTM Cambridge Warwick Sheffield Southampton Oxford UEA Nottingham QUB Bristol South Bank Durham Salford UMIST Swansea Manchester Newcastle Royal Holloway Hull Liverpool Heriot Watt UCL Aston De Monfort QMWC Northumbria Bath Exeter Edinburgh Birmingham Surrey - Physics, Elec. Eng. Bio Sciences Materials Science Implantation Analysis Facilities Include: 2MV High Energy Implanter 200kV High Current implanter Implantation 2 keV  6 MeV Sample sizes up to 40cm x 40cm Hot (1000 o C) or cold (~LN) implants In situ measurements can be made Sample Chambers in clean room (class 100) Up to 10mA beam currents available Future Developments: Precision implantation of novel devices and modification of a wide range of materials Have state-of-the-art facilities (keV-MeV) - (long lifetime) Developing ultra-low energy capability - for nanotechnology, ion beam deposition, ion beam synthesis Developing ultra-low-dose capability Continue close interaction with both University and Industrial groups Surrey Ion Beam Centre