Evaluation of GaAs Power MESFET for Wireless Communication

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Presentation transcript:

Evaluation of GaAs Power MESFET for Wireless Communication Li Xiang

Outline Introduction on power amplifiers for wireless communications Specific requirements for power amplifier design How to evaluate efficiency and linearity Design example of a low-distortion power MESFET Summary

Introduction on RF Power Amplifiers Technologies suitable for RF power amplifiers Si BJT, MOSFET GaAs MESFET, HFET, HBT SiGe HBT InP HFET Wide bandgap materials Specific requirements for power application Thermal conductivity Breakdown voltage Efficiency Linearity Reliability

Efficiency Two normally used definitions: Drain efficiency: Power-added efficiency Methods to improve the efficiency Suppress leakage Schottkey gate leakage Substrate leakage Enhancement mode operation

Linearity Definitions of linearity 1 dB gain compression point Third-order intermodulation distortion Adjacent channel leakage power

Design Example:* Low-distortion Power MESFET Goal: To design a low-distortion GaAs MESFET suitable for digital communication system using /4 shift QPSK modulation Origination of distortion: Frequency dispersion of transconductance/drain current originated from electron trapping at the gate surface New structure to improve the distortion performance: Form semi-insulating setback layer under the gate * H. Furukawa et. al. IEEE Transactions on Electron Devices, vol. 43, No. 2, 1996

Fabrication Flow

Frequency Dispersion of Idss FETs with setback layer show smaller frequency dispersion 15-20% improvement at 1 MHz

RF Power Measurement

Power Characteristics at 950 MHz Test signal: /4 shift QPSK modulation Operational condition: class AB Improved linearity: P1dB 34.5 dBm 36 dBm

IM3 Characteristics Bias point: 10% Idss Improved IM3: 10 dB smaller

Distortion Characteristics Channel separation: 50 kHz Improvements: 11 dB lower at 31.5 dBm output power

Summary A brief introduction has been given on how to evaluate GaAs power FETs. A GaAs MESFET design with a semi-insulating setback layer has been presented, and the distortion characteristics have been evaluated.