1 RF GaN 20 Volts & 0.1 amp  8 pieces: Nitronex NPT 25015: GaN on Silicon Done Gamma, Proton & Neutrons 65 volts Oct 2009  2 pieces: CREE CGH40010F: GaN on siC  6 pieces: Eudyna EGNB010MK: GaN on siC Done Neutrons Switch GaN  International Rectifier GaN on Silicon Under NDA BNL Lansce U of Mass Lowell Gallium Nitride RF Devices Tested in 2009 Plan to Expose same device to Gamma, Protons & Neutrons Online Monitoring

2 Source FET Satish Dhawan, Yale University Pulse Generator 0.1 – 2 MHz 50 % Duty Cycle July FET Setup for Proton Radiation Exposure. ~ Amps Power Supply V out = 20 Volts Drain Gate to - 5 V Powered FET DMM DC mV Watts1 Ω GND 50 Ω Terminator 2 Shorted FETs Rad vs wo Bias G D S Pomona Box Reading = ~ % Duty Cycle 30 m Bias during Radiation Max operating V & I Limit Power by duty cycle

3 Fig. 7 Nitronex irradiated with 60 Co gamma irradiation to select doses. Little change is observed in the response. Fig. 8 Ntironex HEMT irradiate with 5 x neutrons (1 MeV equivalent). Little change is observed in the response..

4 Fig. 9 Eudyna EGNB010 GaN HEMT, V GS versus I D at V DS = 10 volts and selected doses of 60 Co gamma radiation. Little change is apparent even after 43 Mrad of ionizing radiation Fig. 10 Eudyna EGNB010 GaN HEMT V GS versus I D at V DS = 2 volts, 20 volts and with 5 x neutrons (1 MeV equivalent).Like the other figures little change is observed in the response

5 200 Mrads of Protons had no effect – switching 20 V 0.1 Amp Parts still activated after 7 months Vds= 65V Gammas

6 Proton Test Proton Fluence =1 x 1015p/cm2 over a period of about 24 hours. Biased = 65 volts 1MHz Average current = 65 mA limited by Load resistor. No change in current. Our next IEEE TNS Paper shall summarize work to date

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