Czochralski Growth. Example 10% at. Al in Si I M = 10% I S = 1% k = 0.1.

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Presentation transcript:

Czochralski Growth

Example 10% at. Al in Si I M = 10% I S = 1% k = 0.1

Effective Partition Coefficients

LEC (1) quartz crystal, (2) heat flux control system, (3) graphite shield, (4) cavity thermocouple, (5) radiation shield, (6) heater, (7) temperature control thermocouple, (8) water cooled support (9) insulation support, (10) graphite crucible support and (11) tubing support.

Bridgeman Process As lumps as solid source GaAs seed GaAs melt Multi zone furnace Constriction

Flat Orientations