Chris Maloney May 10, 2011 Characterization of a Geiger-mode Avalanche Photodiode.

Slides:



Advertisements
Similar presentations
Chapter 9. PN-junction diodes: Applications
Advertisements

Characterization of Geiger Mode Avalanche Photodiodes
Semiconductor Device Physics Lecture 8 PN Junction Diodes: I-V Characteristics Dr. Gaurav Trivedi, EEE Department, IIT Guwahati.
A photon-counting detector for exoplanet missions Don Figer 1, Joong Lee 1, Brandon Hanold 1, Brian Aull 2, Jim Gregory 2, Dan Schuette 2 1 Center for.
HgCdTe Avalanche Photodiode Arrays for Wavefront Sensing and Interferometry Applications Ian Baker* and Gert Finger** *SELEX Sensors and Airborne Systems.
Avalanche Photodiodes
Study of the MPPC Performance - contents - Introduction Fundamental properties microscopic laser scan –check variation within a sensor Summary and plans.
Optoelectronic Devices (brief introduction)
Department of Aeronautics and Astronautics NCKU Nano and MEMS Technology LAB. 1 Chapter IV June 14, 2015June 14, 2015June 14, 2015 P-n Junction.
Page 1 © J. Paul Robinson, Purdue University BMS 602/631 - LECTURE 8 Flow Cytometry: Theory Purdue University Office: Fax
The Effect of Temperature on the Dark Rate of the Silicon Photomultiplier By Jie Zhao Mentor: Dr. Richard Jones.
1 Kimberly Manser Process Development for Double-Sided Fabrication of a Photodiode Process Development of a Double-Sided Photodiode (for application.
Mid-IR photon counting array using HgCdTe APDs and the Medipix2 ROIC
1 Detectors RIT Course Number Lecture Single Element Detectors.
Characterization of a Geiger-mode Avalanche Photodiode a Rochester Institute of Technology, Department of Electrical and Microelectronic Engineering; b.
SINGLE PHOTON AVALANCHE DIODE (SPAD): FROM SINGLE ELEMENT TO ARRAY (SPADA) (SWORD) G. Bonanno, M. Belluso, F. Zappa, S. Tisa, S. Cova, P. Maccagnani, D.
Semiconductor Optical Single-Photon Diode
Characterisation and Reliability Testing of THz Schottky Diodes Chris Price University of Birmingham, UK
Near-infrared (NIR) Single Photon Counting Detectors (SPADs)
Hybridization of a sigma-delta-based CMOS hybrid detector Kolb, K.E. a ; Stoffel, N.C. c, Douglas, B. c ; Maloney, C.W. a ; Raisanen, A.D. b ; Ashe, B.
Page 1 © J.Paul Robinson, Purdue University BMS 631 – LECTURE007.PPT BMS 602/631 - LECTURE 8 Flow Cytometry: Theory J. Paul Robinson Professor.
OPTICAL DETECTORS IN FIBER OPTIC RECEIVERS.
Characterization of Silicon Photodetectors (Avalanche Photodiodes in Geiger Mode) S. Cihangir, G. Mavromanolakis, A. Para. N.Saoulidou.
A High-speed Adaptively-biased Current- to-current Front-end for SSPM Arrays Bob Zheng, Jean-Pierre Walder, Henrik von der Lippe, William Moses, Martin.
Designed by Soujanya Roy, Anish Chakraborty and Raj Sekhar Goswami Department of Electronics & Communication Engineering.
4/11/2006BAE Application of photodiodes A brief overview.
Zero Read Noise Detectors for the TMT Don Figer, Brian Ashe , John Frye, Brandon Hanold, Tom Montagliano, Don Stauffer (RIDL), Brian Aull, Bob Reich, Dan.
CMOS and Microfluidic Hybrid System on Chip for Molecule Detection Bowei Zhang, Qiuchen Yuan, Zhenyu Li, Mona E. Zaghloul, IEEE Fellow Dept. of Electrical.
Introduction on SiPM devices
Photon detection Visible or near-visible wavelengths
3/26/2003BAE of 10 Application of photodiodes A brief overview.
Venugopala Rao Dept of CSE SSE, Mukka Electronic Circuits 10CS32.
References Hans Kuzmany : Solid State Spectroscopy (Springer) Chap 5 S.M. Sze: Physics of semiconductor devices (Wiley) Chap 13 PHOTODETECTORS Detection.
© 2013 The McGraw-Hill Companies, Inc. All rights reserved. McGraw-Hill 3-1 Electronics Principles & Applications Eighth Edition Chapter 3 Diodes Charles.
1 Astronomical Observational Techniques and Instrumentation RIT Course Number Professor Don Figer Quantum-Limited Detectors.
H.-G. Moser Max-Planck-Institut for Physics, Munich CALOR 06 Chicago June 5-9, 2006 Silicon Photomultiplier, a new device for low light level photon detection.
Understanding Persistence: A 3D Trap Map of an H2RG Imaging Sensor
Detector development and physics studies in high energy physics experiments Shashikant Dugad Department of High Energy Physics Review, 3-9 Jan 2008.
Salvatore Tudisco The new generation of SPAD Single Photon Avalanche Diodes arrays I Workshop on Photon Detection - Perugia 2007 LNS LNS.
Characterization of a Large Format HgCdTe on Silicon Focal Plane Array
Four Channels Data Acquisition System for Silicon Photomultipliers Mateusz Baszczyk, Piotr Dorosz, Sebastian Głąb, Wojciech Kucewicz, Łukasz Mik, Maria.
The MPPC Study for the GLD Calorimeter Readout Introduction Measurement of basic characteristics –Gain, Noise Rate, Cross-talk Measurement of uniformity.
References Hans Kuzmany : Solid State Spectroscopy (Springer) Chap 5 S.M. Sze Physics of semiconductor devices (Wiley) Chap 13 PHOTODETECTORS.
1 Development of Multi-Pixel Photon Counters (1) S.Gomi, T.Nakaya, M.Yokoyama, M.Taguchi, (Kyoto University) T.Nakadaira, K.Yoshimura, (KEK) Oct
President UniversityErwin SitompulSDP 8/1 Lecture 8 Semiconductor Device Physics Dr.-Ing. Erwin Sitompul President University
Development of Multi-Pixel Photon Counters(MPPC) Makoto Taguchi Kyoto University.
1 SiPM studies: Highlighting current equipment and immediate plans Lee BLM Quasar working group.
Timing Studies of Hamamatsu MPPCs and MEPhI SiPM Samples Bob Wagner, Gary Drake, Patrick DeLurgio Argonne National Laboratory Qingguo Xie Department of.
Solid State Detectors - Physics
Prospects to Use Silicon Photomultipliers for the Astroparticle Physics Experiments EUSO and MAGIC A. Nepomuk Otte Max-Planck-Institut für Physik München.
Electronics Devices & Circuits/Unit I/Diodes & its Applications Department of Electronics & Telecommunication Engineering 1DMIETR.
1 Advanced designs of avalanche micro-pixel photodiodes (MAPD) from Zecotek Photonics Ziraddin (Zair) Sadygov On behalf of “MAPD collaboration” (JINR -
S.S.GaO. Outline Introduction Experiment Results and discussion Conclusion References.
Robert Boylestad Digital Electronics Copyright ©2002 by Pearson Education, Inc. Upper Saddle River, New Jersey All rights reserved. Chapter 1: Semiconductor.
Study of Geiger Avalanche Photo Diode applications to pixel tracking detectors Barcelona Main Goal The use of std CMOS tech. APD's in Geiger mode (that.
Fondazione Bruno Kessler Centre for Materials and Microsystems.
D. Renker, PSI G-APD Workshop GSI, PAUL SCHERRER INSTITUT Problems in the Development of Geiger- mode Avalanche Photodiodes Dieter Renker Paul Scherrer.
Development of Multi-Pixel Photon Counters (1)
Application of photodiodes
Recall-Lecture 5 DC Analysis Representation of diode into three models
Performance of LYSO and CeBr3 crystals readout by SiPM
PN-junction diodes: Applications
Electrical Properties of MPPC/SiPM/GMAPD’s
Recall-Lecture 5 DC Analysis Representation of diode into three models
ELECTRONICS AND COMMUNICATION
Infrared Detectors Grown on Silicon Substrates
BMS 602/631 - LECTURE 7 Flow Cytometry: Theory
Deviations from the Ideal I-V Behavior
Kimberly Kolb, Brandon Hanold, Joong Lee, Don Figer
The MPPC Study for the GLD Calorimeter Readout
Presentation transcript:

Chris Maloney May 10, 2011 Characterization of a Geiger-mode Avalanche Photodiode

2 Project Objectives ♦ To extract key parameters that will allow for effective and efficient operation of a Geiger-mode avalanche photodiode array in a LIDAR imaging system June 21, 2015 Characterization of a Geiger-Mode APD C. Maloney

3 Project Goals ♦ Extract key parameters ► Breakdown voltage ► Diode ideality factor ► Series resistance ► Dark count rate ► Optimal bias for imaging ► Number of traps present ► Type of traps present June 21, 2015 Characterization of a Geiger-Mode APD C. Maloney

4 Applications ♦ Avalanche photodiodes (APDs) are used for light detection and ranging (LIDAR) Color coded video of a Chevy van produced by Lincoln Lab LIDAR system June 21, 2015 Characterization of a Geiger-Mode APD C. Maloney

5 Applications ♦ Altimetry ► Measuring rainforest canopy ► Measuring polar icecaps ► Mapping celestial bodies ► Mapping ocean topography ♦ Autonomous Landing ► Unmanned aircrafts ► Landing on Mars ► Landing on an asteroid June 21, 2015 Characterization of a Geiger-Mode APD C. Maloney (Image Credit: MOLA Science Team and G. Shirah, NASA GSFC Scientific Visualization Studio.)

6 Background ♦ Lincoln Laboratory at MIT has fabricated a 32x32 array of Geiger- mode APDs for LIDAR imaging applications June 21, 2015 Characterization of a Geiger-Mode APD C. Maloney

7 Linear-mode vs. Geiger-mode ♦ APDs can be operated in linear-mode or Geiger-mode ♦ Geiger-mode provides much more sensitivity ♦ Linear-mode can produce intensity images June 21, 2015 Characterization of a Geiger-Mode APD C. Maloney M Breakdown0 Ordinary photodiode Linear- mode APD Geiger- mode APD Response to a photon M 1 ∞ I(t) (Image Credit: D.F Figer.)

8 Project Flowchart June 21, 2015 Characterization of a Geiger-Mode APD C. Maloney Receive detector Design camera Fabricate camera Light tight? Measure diode IV curve Extract IV parameters Write IDL code for performance tests Measure dark count rate vs. gate width Measure dark count rate vs. bias Measure dark count rate vs. dead time Analyze data YES NO

9 System Design June 21, 2015 Characterization of a Geiger-Mode APD C. Maloney CAD camera partFabricated camera

10 Front View June 21, 2015 Characterization of a Geiger-Mode APD C. Maloney Without the lens

11 Readout board integrated with camera June 21, 2015 Characterization of a Geiger-Mode APD C. Maloney View inside of camera

12 Detector integrated with readout board June 21, 2015 Characterization of a Geiger-Mode APD C. Maloney Readout board and detector are both from MIT’s Lincoln Laboratories 32x32 APD array

13 System Design June 21, 2015 Characterization of a Geiger-Mode APD C. Maloney Complete LIDAR system

14 Diode IV Testing June 21, 2015 Characterization of a Geiger-Mode APD C. Maloney ♦ Shielded Probe Station ♦ Agilent 4156B Parameter Analyzer ♦ Noise Floor ~ 1 fA

15 Measured Reverse Diode Current vs. Voltage Breakdown Voltage = 28 V Dark Current = 0.1 pA Dark Current Density ~ 1 nA/cm 2 June 21, 2015 Characterization of a Geiger-Mode APD C. Maloney All diodes across the wafer are uniform

16 Measured Forward Diode Current vs. Voltage n = 1.0 No R/G region Series resistance = 2 kΩ June 21, 2015 Characterization of a Geiger-Mode APD C. Maloney No R/G region implies number of traps are minimal

17 Gate Width Definition ♦ The amount of time the detector is ready to detect a photon June 21, 2015 Characterization of a Geiger-Mode APD C. Maloney hνhν Timing Gate Gate Width

18 Measured Dark Count Rate vs. Gate Width June 21, 2015 Characterization of a Geiger-Mode APD C. Maloney Dark count rate should be constant

19 Dead Pixels June 21, 2015 Characterization of a Geiger-Mode APD C. Maloney Upper right corner is unresponsive due to low yielding bump-bonds

20 Measured Dark Count Rate vs. Gate Width – 9 by 8 array June 21, 2015 Characterization of a Geiger-Mode APD C. Maloney Dark count rate is constant and no longer decreasing

21 Measured Dark Count Rate vs. Bias June 21, 2015 Characterization of a Geiger-Mode APD C. Maloney Breakdown voltage is higher than breakdown extracted from IV curve Add ~5V to x-axis to account for cathode voltage

22 Afterpulsing Theory ♦ Detector is armed and a laser pulse is detected ♦ Detector cannot detect photons for t dead ♦ Any carriers caught in traps will also discharge ♦ Detector is armed ♦ If t dead is shorter than the trap lifetime then the trap will discharge while the detector is armed and will result in a false event June 21, 2015 Characterization of a Geiger-Mode APD C. Maloney Afterpulse APD current APD bias Timing gate Laser-induced firing V arm t dead

23 Afterpulsing Model June 21, 2015 Characterization of a Geiger-Mode APD C. Maloney λ – dark count rate R dark – measured dark count rate without afterpulsing P a – avalanche probability N ft – number of filled traps t dead – dead time τ trap – trap lifetime [1]

24 Measured Afterpulsing June 21, 2015 Characterization of a Geiger-Mode APD C. Maloney ♦ No afterpulsing seen No traps or Trap lifetime >500 μs

25 Acknowledgements ♦ Rochester Imaging Detector Lab ► Dr. Don Figer ► John Frye ► Dr. Joong Lee ► Brandon Hanold ► Kim Kolb ♦ Microelectronic Engineering Department ► Dr. Rob Pearson ► Dr. Sean Rommel ► Dr. Karl Hirschman ♦ This work has been supported by NASA grant NNX08AO03G June 21, 2015 Characterization of a Geiger-Mode APD C. Maloney

26 References [1] K.E. Jensen, “Afterpulsing in Geiger-mode avalanche photodiodes for 1.06 μm wavelength” Lincoln Laboratory, MIT [2] D. Neamen, “An Introduction to Semiconductor Devices” McGraw Hill [3] R.F. Pierret, “Semiconductor Device Fundamentals” Addison-Wesley Publishing Company, Inc June 21, 2015 Characterization of a Geiger-Mode APD C. Maloney