1 Commercial-off-the-Shelf DC-DC Converters for High Energy Physics Detectors for the sLHC Upgrade Yale University, New Haven, CT USA Brookhaven National Laboratory, Upton, NY USA Rutherford Appleton Laboratory, Chilton, Didcot, UK National Semiconductor Corp, Richardson, TX, USA New York University, New York, NY, USA IEEE Nuclear Science Symposium, Orlando, FL USA October, 2009

Cables 10 Chip Hybrid – SCT Module for LHC Counting House 3.5 V 20 Chip Hybrid – Si Tr Module for Hi Luminosity Cable Resistance = 4.5 Ohms 1.5 amps 2.4 amps X 10 DC-DC Power Converter 20 Chip Hybrid – Si Tr Module for Hi Luminosity 1.3 V 2.4 amps V 12.1V V 13 V Voltage Drop = 6.75 V Voltage Drop = 10.8V 0.24 amps Voltage Drop = 1.08 V Length of Power Cables = 140 Meters

3 Agenda  Learning from Commercial Devices  Buck > Voltage, EMI  Plug In Cards for ABCN2.5 Hybrids - Noise  Require Radiation resistance & High Voltage operation  Thin Oxide  High Voltage with Thin Oxide ?  DMOS, Drain Extension 5 nm, 7 nm  HEMT has no Oxide – Higher Voltage ? 200 Mrads 20V

4 Synchronous Buck Converter 10 V 1 V 100 nsec 900 nsec

5 Enpirion EN5360  Found out at Power Technology conference 0.25 µm Lithography  Irradiated Stopped on St. Valentines Day 2007  No effects after 100 Mrads  Noise tests at Yale, RAL & BNL.  20 µm Al is good shield for Air Coils  All other devices failed, even other part numbers from Enpirion  We TWEPP IHP was foundry for EN5360  What makes Radiation Hardness ?  Chinese Company Devices

6 Empirical Evidence: Deep submicron But what why?

7 We say thin Gate Oxide is a necessary Condition

8 IBM Foundry Oxide Thickness LithographyProcessOperatingOxide NameVoltageThickness nm 0.25 µm6SF µm8RF1.2 & &

9 Oxide Si Gate Oxide Trap Region Tunneling Region Thickness ~ 5 nm Fixed Charge States GND Switching Charge States V Book ‘Ionizing Radiation Effects in MOS Oxides’ Author Timothy R. Oldham

10 Controller : Low Voltage High Voltage: Switches – LDMOS, Drain Extension, Deep Diffusion etc >> 20 Volts HEMT GaN on Silicon, Silicon Carbide, Sapphire Can We Have High Radiation Tolerance & Higher Voltage Together ???

11 High performance RF LDMOS transistors with 5 nm gate oxide in a 0.25 μm SiGe:C BiCMOS technology: IHP Microelectronics Electron Devices Meeting, IEDM Technical Digest. International Electron Devices Meeting, IEDM Technical Digest. International 2-5 Dec Page(s): LDMOS Structure Laterally Diffused Drain Extension High Voltage / high Frequency Main market. Cellular base stations

12 R. Sorge et al, IHP Proceedings of SIRF 2008 Conference High Voltage Complementary Epi Free LDMOS Module with 70 V PLDMOS for a 0.25 μm SiGe:C BiCMOS Platform

13 CompanyDeviceProcessFoundryOxideTime inDose beforeObservation Name/ Number NameThickness SecondsDamage seenDamage Mode Countrynm IHPASIC customSG25V GODIHP, Germany5 53 Mrad slight damage XySemiFET 2 ampsHVMOS China7 52 Mrad minimal damage XySemiXP2201HVMOS China7 In Development XySemiXPxxxx HVMOS China7 In Development Synch Buck XySemi XP5062 China krad loss of V out regulation TI TPS54620LBC µm krad abrupt failure IRIR & Krads loss of Vout regulation EnpirionEN5365CMOS 0.25 µm Dongbu HiTek, Korea5 11, krad Increasing Input Current, EnpirionEN5382CMOS 0.25 µm Dongbu HiTek, Korea Krads loss of V out regulation EnpirionEN5360 #2SG25V (IHP)IHP, Germany522 Days 100 MradsMinimal Damage EnpirionEN5360 #3SG25V (IHP)IHP, Germany510 Days 48 MradsMinimal Damage Non IBM Foundry ICs

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15 Depletion Mode Normally ON Enhancement Mode Normally OFF

16 GaN for Power Switching

17 RF GaN 20 Volts & 0.1 amp  8 pieces: Nitronex NPT 25015: GaN on Silicon Done Gamma, Proton & Neutrons 65 volts Oct 2009  2 pieces: CREE CGH40010F: GaN on siC  6 pieces: Eudyna EGNB010MK: GaN on siC Done Neutrons Switch GaN  International Rectifier GaN on Silicon Under NDA BNL Lansce U of Mass Lowell Gallium Nitride Devices under Tests Plan to Expose same device to Gamma, Protons & Neutrons

Mrads of Protons had no effect – switching 20 V 0.1 Amp Parts still activated

19 Coupled Air Core Inductor Connected in Series Plug In Card with Shielded Buck Inductor 0.35 mm1.5 mm TopBottom 3 Oz mm Cu Spiral Coils Resistance in mΩ Replace pcb coil with copper foil 12 V amps Inductance ~ 0.6 µH

20 Sensor 1 cm from Coil Shield 20 µm Al FoilNoise NO change with Plug in card on top Noise Same with Linear or DC - DC

21 IR’s basic current GaN-on-Si based device structure is a high electron mobility transistor (HEMT), based on the presence of a two dimensional electron gas (2DEG) spontaneously formed by the intimacy of a thin layer of AlGaN on a high quality GaN surface as shown in Figure 1. It is obvious that the native nature of this device structure is a HFET with a high electron mobility channel and conducts in the absence of applied voltage (normally on). Several techniques have been developed to provide a built-in modification of the 2DEG under the gated region that permits normally off behavior. Aside from providing high quality, reliable and a low-cost CMOS compatible device manufacturing process, the GaNpowIR technology platform also delivers dramatic improvements in three basic figures of merit (FOMs), namely specific on- resistance RDS(on), RDS(on)*Qg and efficiency*density/cost.

22 Conclusions  Learned from commercial Devices, Companies & Power conferences  Can get high Radiation Tolerance & Higher Voltage  High Frequency > Smaller Air coil > Less Material  Goal: ~20 MHz Buck, MEM on Chip size 9 mm x 9mm  Power SOC: MEMs Air Core Inductor on Chip  Study Feasibility 48 / 300V Converters  Irradiation: Max operating V & I.  Limit Power Dissipation by Switching duty cycle  Online Monitoring during irradiation for faster results  Yale Plug Cards can be loaned for Evaluation  Collaborators are Welcome

23 Neither it on Top of the World for ? Working on Power Supply Is not Glamorous More Details: click on DC-DCwww.Yale.edu/FASTCAMAC