RF & Microwave Engineering

Slides:



Advertisements
Similar presentations
Application of the Root-Locus Method to the Design and Sensitivity Analysis of Closed-Loop Thermoacoustic Engines C Mark Johnson.
Advertisements

Chapter 6 Feedback Amplifiers
ENE 428 Microwave Engineering
Smith Chart Impedance measured at a point along a transmission line depends not only on what is connected to the line, but also on the properties of the.
1 S Parameters and Power gains  Training in 1 day Roberto Antonicelli ST Belgium, Network Division.
Introduction The input network of the power amplifier will be designed in the example. The network synthesized will be expanded to allow for biasing of.
ELEC 412Lecture 51 ELEC 412 RF & Microwave Engineering Fall 2004 Lecture 5.
ELEC 412Lecture 41 ELEC 412 RF & Microwave Engineering Fall 2004 Lecture 4.
ELEC Lecture 91 ELEC 412 RF & Microwave Engineering Fall 2004 Lecture 9.
ELEC Lecture 191 ELEC 412 RF & Microwave Engineering Fall 2004 Lecture 19.
Lecture 9 Last lecture Parameter equations input impedance.
Instructor: Engr. Zuneera Aziz Course: Microwave Engineering
Introduction to Op Amps
Broadband Amplifiers.
Microwave Amplifier Design
Part B-5 OSCILLATORS: Condition for oscillations. RC-phase oscillator with transistor and FET, Hartley and colpitts oscillators, Wien bridge oscillator,
EKT 441 MICROWAVE COMMUNICATIONS
LECTURE 2. IMPEDANCE MATCHING
Microwave Amplifier Design Blog by Ben (Uram) Han and Nemuel Magno Group 14 ENEL 434 – Electronics 2 Assignment
BJT Fixed Bias ENGI 242 ELEC 222. January 2004ENGI 242/ELEC 2222 BJT Biasing 1 For Fixed Bias Configuration: Draw Equivalent Input circuit Draw Equivalent.
Microwave Amplifier Design Blog by Ben (Uram) Han and Nemuel Magno Group 14 ENEL 434 – Electronics 2 Assignment
ENE 428 Microwave Engineering
EKT 441 MICROWAVE COMMUNICATIONS
1 ENE 429 Antenna and Transmission lines Theory Lecture 4 Transmission lines.
Microwave Engineering, 3rd Edition by David M. Pozar
Sensitivity System sensitivity is defined as the available input signal level Si for a given (SNR)O Si is called the minimum detectable signal An expression.
1 HF power gains and f max LECTURE 19 Clarification of power gains: MAG, MSG, U.
Chapter-9 Feedback Amplifier
General Characteristics of Negative-Feedback Amplifiers
ENE 490 Applied Communication Systems Lecture 3 Stub matching, single- and two-port networks DATE: 27/11/06.
IMPEDANCE MATCHING IN HIGH FREQUENCY LINES UNIT - III.
CHAPTER 4 TRANSMISSION LINES.
Maximum Gain Amplifiers For the two-port network shown below, It is well known that maximum power transfer from the source to the transistor occurs when:
1 RS ENE 428 Microwave Engineering Lecture 5 Discontinuities and the manipulation of transmission lines problems.
TELECOMMUNICATIONS Dr. Hugh Blanton ENTC 4307/ENTC 5307.
116/11/50 ENE 490 Applied Communication Systems Lecture 2 circuit matching on Smith chart.
Transistor Circuit DC Bias Part 1 ENGI 242. February 2003ENGI 2422 DC Biasing Circuits Fixed-Bias Circuit Emitter-Stabilized Bias Circuit Collector-Emitter.
 Power and power-gains are two main considerations in the design of a microwave transistor amplifier. To derive power and power-gains using traveling.
Amplifiers Amplifier Parameters Gain = Po/Pi in dB = 10 log (Po/Pi)
BJT Emitter Stabilized Bias
전자파 연구실 Microwave amplifier design. 전자파 연구실 2 Microwave amplifiers Low noise amplifier Broad band amplifier Power amplifier DC bias ( 동작점 ) 에 따라.
ENE 428 Microwave Engineering
3-Stage Low Noise Amplifier Design at 12Ghz
Microwave Office 2005 Training Linear Simulation – Low Noise Amplifier
Beijing Embedded System Key Lab
ENE 490 Applied Communication Systems
1 EKT 441 MICROWAVE COMMUNICATIONS CHAPTER 6: MICROWAVE AMPLIFIERS.
December 1997 Circuit Analysis Examples 걼 Hairpin Edge Coupled Filter 걼 Bipolar Amplifier 걼 Statistical Analysis and Design Centering 걼 Frequency Doubler.
1.  Transmission lines or T-lines are used to guide propagation of EM waves at high frequencies.  Distances between devices are separated by much larger.
Feedback Amplifier By : Mohanish R. Chaubal –
Feedback Amplifiers. Outline Introduction The general feedback structure Some properties of negative feedback The four basic feedback topologies The series-shunt.
RF and Microwave Network Theory and Analysis
ELEC 401 MICROWAVE ELECTRONICS Lecture on Matching
E212 – Analog Electronic II
Effect of feedback on amplifier poles
ENE 429 Antenna and Transmission Lines
Feedback and Oscillator Circuits
ELEC 401 MICROWAVE ELECTRONICS Lecture on Smith Chart
EKT 441 MICROWAVE COMMUNICATIONS
ENE 429 Antenna and Transmission Lines Theory
Chapter 6 Feedback Circuits
& Microwave Engineering
ENE 429 Antenna and Transmission lines Theory
ELEC 401 MICROWAVE ELECTRONICS Lecture on Smith Chart
ENE 429 Antenna and Transmission lines Theory
IMPEDANCE MATCHING & SMITH CHART
A 24 GHz Low Noise Amplifier: Design, Construction, and Testing
Understanding Network Analysis
N-port Network Port reference Line Impedance Port Voltage & Current.
ENE 428 Microwave Engineering
Presentation transcript:

RF & Microwave Engineering ELEC 412 RF & Microwave Engineering Fall 2004 Lecture 20 ELEC 412 - Lecture 20

What Does Stability Mean? Stability circles determine what load or source impedances should be avoided for stable or non-oscillatory amplifier behavior Because reactive loads are being added to amp the conditions for oscillation must be determined So the Output Stability Circle determine the L or load impedance (looking into matching network from output of amp) that may cause oscillation Input Stability Circle determine the S or impedance (looking into matching network from input of amp) that may cause oscillation ELEC 412 - Lecture 20

Criteria for Unconditional Stability Unconditional Stability when amplifier remains stable throughout the entire domain of the Smith Chart at the operating bias and frequency. Applies to input and output ports. For |S11| < 1 and |S22| < 1, the stability circles reside completely outside the |S| = 1 and |L| = 1 circles. ELEC 412 - Lecture 20

Unconditional Stability: Rollett Factor |Cin| – rin | >1 and |Cout| – rout | >1 Stability or Rollett factor k: with |S11| < 1 or |S22| < 1 and ELEC 412 - Lecture 20

Stabilization Methods Stabilization methods can be used to for operation of BJT or FET found to be unstable at operating bias and frequency One method is to add series or shunt conductance to the input or output of the active device in the RF signal path to “move” the source or load impedances out of the unstable regions as defined by the Stability Circles ELEC 412 - Lecture 20

Stabilization Using Series Resistance or Shunt Conductance ELEC 412 - Lecture 20

Stabilization Method: Smith Chart ELEC 412 - Lecture 20

Constant Gain: Unilateral Design (S12= 0) Need to obtain desired gain performance Basically we can “detune” the amp matching networks for desired gain Unilateral power gain GTU implies S12 = 0 ELEC 412 - Lecture 20

Unilateral Power Gain Equations Individual blocks are: GTU (dB) = GS(dB) + G0(dB) +GL(dB) ELEC 412 - Lecture 20

Unilateral Gain Circles If |S11| < 1 and |S22 |< 1 maximum unilateral power gain GTUmax when S = S11* and L = S22* Normalized GS w.r.t. maximum: ELEC 412 - Lecture 20

Unilateral Gain Circles Normalized GL w.r.t. maximums: Results in circles with center and radii: ii = 11 or 22 depending on i = S or L ELEC 412 - Lecture 20

Gain Circle Observations Gi max when i = Sii* and dgi = Sii* of radius rgi = 0 Constant gain circles all have centers on line connecting the origin to Sii* For the special case i = 0 the normalized gain is: gi = 1 - | Sii |2 and dgi = rgi = | Sii |/(1 + | Sii |2) This implies that Gi = 1 (0dB) circle always passes through origin of i - plane ELEC 412 - Lecture 20

Input Matching Network Gain Circles S is detuned implying the matching network is detuned ELEC 412 - Lecture 20

Bilateral Amplifier Design (S12 included) Complete equations required taking into account S12: Thus S*  S11 and L*  S22 ELEC 412 - Lecture 20

Bilateral Conjugate Match Matched source reflection coefficient Matched load reflection coefficient ELEC 412 - Lecture 20

Optimum Bilateral Matching ELEC 412 - Lecture 20

Design Procedure for RF BJT Amps Bias the circuit as specified by data sheet with available S-Parameters Determine S-Parameters at bias conditions and operating frequency Calculate stability |k| > 1 and || < 1? If unconditionally stable, design for gain If |k|  1 and || 1 then draw Stability Circles on Smith Chart by finding rout, Cout, rin, and Cin radii and distances for the circles ELEC 412 - Lecture 20

Design Procedure for RF BJT Amps Determine if L ( S22* for conjugate match) lies in unstable region – do same for S If stable, no worries. If unstable, add small shunt or series resistance to move effective S22* into stable region – use max outer edge real part of circle as resistance or conductance (do same for input side) Can adjust gain by detuning L or S ELEC 412 - Lecture 20

Design Procedure for RF BJT Amps To design for specified gain, must be less than GTU max (max unilateral gain small S12) Recall that (know G0 = |S21|2) GTU [dB] = GS [dB] + G0 [dB] + GL [dB] Detune either S or L Draw gain circles for GS (or GL) for detuned S (or L) matching network Overall gain is reduced when designed for (a) Stability and (b) detuned matching netw0rk ELEC 412 - Lecture 20

Design Procedure for RF BJT Amps Further circles on the Smith Chart include noise circles and constant VSWR circles Broadband amps often are feedback amps ELEC 412 - Lecture 20

RF Shunt-Shunt Feedback Amp Design S21 calculated from desired gain G ELEC 412 - Lecture 20

Distortion: 1 dB Compression ELEC 412 - Lecture 20

Distortion: 3rd Order Intermodulation Distortion ELEC 412 - Lecture 20

Distortion: 3rd Order IMD Spurious Free Dynamic Range ELEC 412 - Lecture 20