Reactive ion etching. Material selectivity Ion Beam Nordiko 3000 IBD system Etch rates 70ºpan 65 W130 W * junctions, spin valves.

Slides:



Advertisements
Similar presentations
MICROELECTROMECHANICAL SYSTEMS ( MEMS )
Advertisements

Advanced Manufacturing Choices
Tutorial 3 Derek Wright Wednesday, February 2 nd, 2005.
Section 3: Etching Jaeger Chapter 2 Reader.
ECE/ChE 4752: Microelectronics Processing Laboratory
PDMS processing & devices. 2 nd master PDMS 1 st master PDMS control channel active channel PDMS 3 rd substrate.
FUNCTIONAL CHEMICALS RESEARCH LABORATORIES Copyright(c) NIPPON KAYAKU Co., Ltd. 1 KAYAKU MicroChem. Co., Ltd. MicroChem. Corp. NIPPON KAYAKU Co., Ltd.
INTEGRATED CIRCUITS Dr. Esam Yosry Lec. #6.
Fabrication of p-n junction in Si Silicon wafer [1-0-0] Type: N Dopant: P Resistivity: Ω-cm Thickness: µm.
IBD Reactive deposition Dielectric characterization Refractive index 1.68 ~ saphire.
Pattern transfer by etching or lift-off processes
For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN © 2002.
IC Fabrication and Micromachines
Thin film deposition techniques II. Chemical Vapor deposition (CVD)
LOW-k DIELECTRIC WITH H2/He PLASMA CLEANING
Microelectronics Processing
The Physical Structure (NMOS)
Antireflex coatings Antireflex coating INESC: 150, 400Å TiWN 2 Resist was exposed both to the light source and to reflected beams from resist/sample.
Aspect Ratio Dependent Twisting and Mask Effects During Plasma Etching of SiO2 in Fluorocarbon Gas Mixture* Mingmei Wang1 and Mark J. Kushner2 1Iowa State.
The Deposition Process

MEMs Fabrication Alek Mintz 22 April 2015 Abstract
1 ME 381R Fall 2003 Micro-Nano Scale Thermal-Fluid Science and Technology Lecture 18: Introduction to MEMS Dr. Li Shi Department of Mechanical Engineering.
Top Down Method Etch Processes
INTEGRATED CIRCUITS Dr. Esam Yosry Lec. #7. Etching  Introduction  Etching  Wet Etching  Dry Etching  Plasma Etching  Wet vs. Dry Etching  Physical.
ES 176/276 – Section # 2 – 09/19/2011 Brief Overview from Section #1 MEMS = MicroElectroMechanical Systems Micron-scale devices which transduce an environmental.
Z. Feng VLSI Design 1.1 VLSI Design MOSFET Zhuo Feng.
McGill Nanotools Microfabrication Processes
Fabrication of Active Matrix (STEM) Detectors
An Inductively Coupled Plasma Etcher
Nano/Micro Electro-Mechanical Systems (N/MEMS) Osama O. Awadelkarim Jefferson Science Fellow and Science Advisor U. S. Department of State & Professor.
Lecture 0: Introduction. CMOS VLSI Design 4th Ed. 0: Introduction2 Introduction  Integrated circuits: many transistors on one chip.  Very Large Scale.
Corial 200 COSMA Software with:  Edit menu for process recipe edition,  Adjust menu for process optimizing,  Maintenance menus for complete equipment.
II-Lithography Fall 2013 Prof. Marc Madou MSTB 120
Chapter Extra-2 Micro-fabrication process
Top Down Manufacturing
Top Down Method Etch Processes
Introduction EE1411 Manufacturing Process. EE1412 What is a Semiconductor? Low resistivity => “conductor” High resistivity => “insulator” Intermediate.
Surface Micromachining Dr. Marc Madou, Fall 2012, UCI Class 10.
Spencer/Ghausi, Introduction to Electronic Circuit Design, 1e, ©2003, Pearson Education, Inc. Chapter 3, slide 1 Introduction to Electronic Circuit Design.
Machine Tools And Devices For Special Technologies Ion beam machining Slovak University of Technology Faculty of Material Science and Technology in Trnava.
Corial 300 COSMA Software with:  Edit menu for process recipe edition,  Adjust menu for process optimizing,  Maintenance menus for complete equipment.
ISAT 436 Micro-/Nanofabrication and Applications Photolithography David J. Lawrence Spring 2004.
Micro/Nanofabrication
VCSEL Fabrication Processing
Plasma Etch Sub-processes. Reactant Generation process Substrate Dissociation/ ionization of input gases by plasma Gas delivery RF Electrode During ionization,
Etching: Wet and Dry Physical or Chemical.
 Refers to techniques for fabrication of 3D structures on the micrometer scale  Most methods use silicon as substrate material  Some of process involved.
Fab - Step 1 Take SOI Wafer Top view Side view Si substrate SiO2 – 2 um Si confidential.
Process integration Wafer selection active role for the wafer ? passive role ? –thermal conductivity –optical transparency –flat,
Top Down Method The Deposition Process Author’s Note: Significant portions of this work have been reproduced and/or adapted with permission from material.
Microfabrication for fluidics, basics and silicon
Process technology. Process Technology 2 MMIC-HEMT, ETH Zürich Electrical nm contacts, Uni Basel Luft InP 70 nm DFB Laser, WSI München Applications: Nano.
Equipment and technological processes for manufacturing GaAs MMICs PLASMA ETCHING ICP ETCHING TALK 6 1.
Wisconsin Center for Applied Microelectronics
서강대학교 기계공학과 최범규(Choi, Bumkyoo)
7. Surface Micromachining Fall 2013 Prof. Marc Madou MSTB 120
EE 3311/7312 MOSFET Fabrication
Etching Processes for Microsystems Fabrication
Lithography.
Luminescent Periodic Microstructures for Medical Applications
Fabrication of Photonic Crystals devices Hamidreza khashei
Lecture 4 Fundamentals of Multiscale Fabrication
Si DRIE APPLICATION In Corial 210IL.
Easy-to-use Reactive Ion Etching equipment
Software description cosma pulse
Processing for optical communication devices
31/08/ GaAs and 5629 GaAs growth 5622 GaAs,
DRIE APPLICATIONS In Corial 210IL.
SILICON MICROMACHINING
Presentation transcript:

Reactive ion etching

Material selectivity

Ion Beam Nordiko 3000 IBD system Etch rates 70ºpan 65 W130 W * junctions, spin valves ~ 60 Al ~ 160 Al 2 O 3 ~ 57 SiO 2 ~ 170 CoZrNb~ 130 Photoresist~ 55 * PR 5 min. 65 W RF grids: +500V, -200V 8 sccm Ar 40% rotation 70º or 40º pan

Challenges in Dry etching Damage by surface charging Feature size control within a wafer Etch rate of a material depends on the surface area of the etchable material but a large unmasked area exposed to the beam consumes more etch species than a single trench – local modulation of the plasma chemistry. Etch rate of a material depends on the ratio feature size : feature depth Aspect ratio dependent etch rate

Etching end-point Visual inspection Direct measurements: sample electrical resistivity Mass spectroscopy – monitor the chamber atmosphere composition during the etching

Patterning thick and hard materials Disk head slider machining – reactive ion etching SF 6  etching TiC CF 2  etching Al 2 O 3 Temperature: ºC Etch ratio: Resist:AlTiC ~ 5:1 rate: Å/min Surface smoothing: < 250Å Etch depth 0.5 to 5  m Al 2 O 3 -TiC sliders

Patterning thin films to sub-micron Courtesy of Ed Murdoch, Seagate shield sv Ins. lead pm

Bibliography - VLSI Technology, S.M.Sze, McGraw-Hill International Editions - Nanoelectronics and information technology – Advanced Electronic Materials and Novel Devices, Rainer Waser (Ed.), Wiley-VCH (2003) - Fundamentals of Microfabrication – The science of miniaturization, Marc J.Madou, CRC press (2002) - “Lift-off techniques for fine line metal patterning”, J.M.Frary and P.Seese, SEMICONDUCTOR INTERNATIONAL, pp (December 1981) - “Ion etching for pattern delineation”, C.M.Melliar-Smith, J.Vac.Sci.Technol., Vol.13 (5), pp (September 1976) - “Ion Beam Etching”, R.R.Puckett, S.L.Michel and W.E.Hughes, Thin Film Processes II, Chapt.V-2, Academic Press. Inc. (1991) - “Etch rates for Micromachining processing”, K.R.Williams and R.S.Muller, J.Microelectromechanical Systems, Vol.5 (4), pp (December 1996) - “Reactive Ion etching of alumina/TiC substrates”, US Pattent nº 6,001,268 (IBM Corporation), 1997