半導體量測技術 Semiconductor Materials and Device Characterization Topic 5: oxide trapped charge and poly-depletion effect in MOSFET Instructor: Dr. Yi-Mu Lee.

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半導體量測技術 Semiconductor Materials and Device Characterization Topic 5: oxide trapped charge and poly-depletion effect in MOSFET Instructor: Dr. Yi-Mu Lee Department of Electronic Engineering National United University

Determine Q ot or Q m : D. K. Schroder, p. 363

Q ot QmQm no effect has effect effect on both sweeping direction D. K. Schroder, p. 363

Finite gate doping density: Typical doping densities: ~10 20 /cm 3 D. K. Schroder, p. 351

Poly depletion effect on C-V curve (PMOS device): Lf and hf C-V: both showing capacitance drop Why? D. K. Schroder, p. 351

Poly depletion effects: 1.Change V t 2.Reduce the drain current 3.Increase gate resistance 1~3: reduce circuit speed

V FB -t ox plot: determine work function and Q f D. K. Schroder, p. 360

D. K. Schroder, p. 361

D. K. Schroder, p. 339

D. K. Schroder, p. 340

Fig 6.4 (a) D. K. Schroder, p. 341

Fig 6.4 (b) and (c) (b) –Vg, surface: accumulated, Q p dominates, C p is very high, so C p, C b, C n, C it are shorted (c) Small +Vg, depleted surface, Q b dominates Depletion to weak inversion Fig. from D. K. Schroder, p. 341

Fig 6.4 (d) and (e) (d) Strong inversion: C n can follow applied ac voltage, low-freq (e) Inversion charge can’t follow ac voltage, high-freq Fig. from D. K. Schroder, p. 341

Interface trapped charge (Q it ) Low-freq (quasistatic) method Effect of Q it on lf and hf C-V acceptor-like and donor-like trap density

High-freq CV Distorted C-V stretch-out due to gate-voltage axis Qit doesnot contribute capacitance Fig. from D. K. Schroder, p. 369

Low-freq CV additional capacitance: Q it respond low-frequency Qit does contribute capacitance Donor-like trap acceptor-like trap inversion delay Fig. from D. K. Schroder, p. 369

Review: P. 346 (exercise 6.1) Band structure (equilibrium, non-equilibrium) P. 368~372 Derive eq (6.44) and (6.47)