ECD 442 Power Electronics1 Power MOSFETs Two Types –Depletion Type Channel region is already diffused between the Drain and Source Deplete, or “pinch-off”

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Presentation transcript:

ECD 442 Power Electronics1 Power MOSFETs Two Types –Depletion Type Channel region is already diffused between the Drain and Source Deplete, or “pinch-off” the Channel –Enhancement Type No channel region exists between the Drain and Source “Invert” the region between the Drain and Source to induce a channel

ECD 442 Power Electronics2 Depletion MOSFET

ECD 442 Power Electronics3 N-Channel Depletion MOSFET Normally Reverse-Bias the Gate-Source Junction

ECD 442 Power Electronics4 Enhancement MOSFET

ECD 442 Power Electronics5 N-Channel Enhancement MOSFET The Gate-Source Junction will be Forward-Biased The bias voltage must be greater than a “threshold” voltage A Channel region is induced between the Drain and Source

ECD 442 Power Electronics6 Drain Characteristics

ECD 442 Power Electronics7 Steady-State Characteristics

ECD 442 Power Electronics8 Switching Characteristics

ECD 442 Power Electronics9 Equivalent Circuit

ECD 442 Power Electronics10 Switching Model

ECD 442 Power Electronics11 Switching Waveforms and Times

ECD 442 Power Electronics12 Turn-on Delay, t d(on) = time to charge the input capacitance to V T Rise time, t r = Charging time to charge the input capacitance to the full gate voltage, V GSP in order to drive the transistor into the linear region of operation

ECD 442 Power Electronics13 Turn-off delay time, t d(off) = time for the input capacitance to discharge from “overdrive” voltage V 1 to pinch-off. V GS must decrease significantly for V DS to rise. Fall time, t f = time for the input capacitance to discharge from pinch-off to the threshold voltage.