Thin film deposition techniques II

Chemical Vapor deposition (CVD)

INESC PECVD at INESC Deposition of SiO 2 and Si 3 N 4 for electrical insulation and passivation. Film uniformity ~ 6% over a 6‘’ wafer. Typical film thickness from 1000 Å to 1  m ( with the possibility of depositing up to 4  m of SiO 2 on bare silicon).

Atomic Layer Deposition (ALD) Layer by layer growth by chemisorption of polar molecules Radical incorporation – not good for spin transport Chemisorption of percursor molecules ZnCl 2 Saturated monolayer The reactant H 2 S reacts with ZnCl - deposition of ZnS

Ion beam deposition