1 Alternative Sampling Configurations – new study 20 GeV photons 30 x 5/7 X 0 20 x 5/7 X 0 + 10 x 10/7 X 0 Total absobed energy Dep energy in Si Leakage.

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Presentation transcript:

1 Alternative Sampling Configurations – new study 20 GeV photons 30 x 5/7 X 0 20 x 5/7 X x 10/7 X 0 Total absobed energy Dep energy in Si Leakage into HCal

2 Response photons 20 x 5/7 X x 10/7 X 0

3 Longitudinal Profiles 20 GeV photons 30 x 5/7 X 0 20 x 5/7 X x 10/7 X 0

4 higher energy 250 GeV photons 20 x 5/7 X x 10/7 X 0

5 high energy response in pixel 250 GeV photons Max pixel in layer 12 (E dep in MIPs) (124 KeV/MIP for 320  m Si) 5 mm x 5 mm pixels (real prototype hex. pixels have smaller area; factor 0.65) 20 x 5/7 X x 10/7 X 0

6 Weighting the layers 20 GeV photons unweighted weighted 20 x 5/7 X x 10/7 X 0

7 Resolution Comparison photons

resolution photons

SiD Cal R. Frey9 Conclusions on config Containment is much better  How important is the leakage for the HCal ? Resolution is nearly the same ( k / sqrt(E(GeV)) )  20+10: k=0.169  0.002, E  20 GeV or more  30:  0.002, E  10 GeV (0.169 at 20 GeV)  Best weighting: 21-30/1-20 = 2.0 Response for remains linear at higher energy SiD cost is not much different

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